Organic light-emitting device
A technology of organic light-emitting devices and devices, which is applied in the direction of light-emitting materials, electric solid-state devices, semiconductor devices, etc., can solve the problems of insufficient emission efficiency and stability, and achieve the effect of long continuous driving life and high emission efficiency
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Embodiment 1
[0101] Indium tin oxide (ITO) was formed as a thin film with a thickness of 130 nm on a glass substrate as a substrate by a sputtering method to serve as an anode, and the resultant was used as a transparent, conductive support substrate. It was sequentially ultrasonically cleaned in acetone and isopropanol (IPA), followed by boiling in IPA, followed by drying. Furthermore, the resultant was subjected to UV / ozone cleaning.
[0102] A chloroform solution was prepared by using Compound 1 shown below as a hole transport material, and the concentration of the compound was 0.1 wt%.
[0103]
[0104] Compound 1
[0105] This solution was dropped onto the above-mentioned ITO electrode, and the whole was first spin-coated at 500 RPM for 10 seconds, and then at 1,000 RPM for 1 minute, thereby forming a thin film. Then, the resultant was dried in a vacuum oven at 80° C. for 10 minutes, thereby completely removing the solvent in the film. The formed hole transport layer had a thick...
Embodiment 2
[0125] A light-emitting device was produced in the same manner as in Example 1, except that the host material of the light-emitting layer was composed of Compound 4 as shown below.
[0126]
[0127] Compound 4
[0128] A voltage of 4.5 V was applied to the device thus prepared while using the ITO electrode (anode) as a positive electrode and the aluminum electrode (cathode) as a negative electrode. As a result, the device was observed to emit blue light, which was emitted by Compound 3, with an emission brightness of 2,500 cd / m 2 , the emission efficiency is 5.5lm / W, and the maximum emission wavelength is 460nm.
[0129] In addition, at a current density of 30mA / cm 2 A voltage was applied to the device in a nitrogen atmosphere under the condition of . As a result, the brightness half-life is as long as approximately 1,400 hours.
[0130] Thin films of the host material and the light-emitting dopant of the light-emitting layer were each formed by vacuum deposition, and t...
Embodiment 3
[0139] A light-emitting device was manufactured in the same manner as in Example 2, except that the material used for the electron transport layer was changed to 2,9-bis[2-(9,9-dimethylfluorenyl)]phenanthroline.
[0140] A voltage of 4.5 V was applied to the device while the ITO electrode (anode) was used as the positive electrode and the aluminum electrode (cathode) was used as the negative electrode. As a result, the device was observed to emit blue light, which was emitted by compound 3, with an emission brightness of 2,400 cd / m 2 , the emission efficiency is 5.1lm / W, and the maximum emission wavelength is 462nm.
[0141] In addition, at a current density of 30mA / cm 2 A voltage was applied to the device in a nitrogen atmosphere under the condition of . As a result, the brightness half-life is as long as approximately 1,600 hours.
[0142] The measured energy gap of the electron transport material is 3.08 eV, which is greater than 3.00 eV.
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Abstract
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