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High-conductivity epoxy moulding material having heat conducting path and manufacturing method thereof

A technology of epoxy molding compound and heat conduction path, which is applied in the field of microelectronic packaging, can solve the problems of introduction and reporting of epoxy molding materials and preparation methods, and achieve good application prospects, good processability, performance and The effect of cost uniformity

Inactive Publication Date: 2008-06-25
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above-mentioned published patents and published literature reports have described methods for improving the thermal conductivity of polymer-based composite materials and methods for constructing heat-conducting channels using polystyrene particles as a skeleton, there are no epoxy molding materials and preparations with heat-conducting paths. Method presentation and reporting

Method used

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  • High-conductivity epoxy moulding material having heat conducting path and manufacturing method thereof
  • High-conductivity epoxy moulding material having heat conducting path and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0031] (2) Example 1 of the present invention: low thermal conductivity molding particles are the skeleton, and high thermal conductivity molding powder is used as the channel

[0032] Step 1: Exactly the same as Step 1 of Comparative Example 1.

[0033] Step 2: Exactly the same as Step 3 of Comparative Example 1.

[0034]Step 3: Use the molding powder prepared in step 2 to make low thermal conductivity molding compound granules.

[0035] Step 4: Mix 40 parts of silicon dioxide epoxy molding compound particles and 60 parts of silicon nitride epoxy molding powder by ball milling for 2 hours, put them in a vacuum drying oven for degassing for 1 hour after mixing, and then put the mixture Hot press at 175°C and 100MPa for 5 minutes, put it into a vacuum drying oven after cooling, and post-cure at 175°C for 4 hours. After cooling, a silicon nitride epoxy molding compound sample filled with silica epoxy molding compound particles was obtained. The product properties are shown in ...

example 2

[0043] Step 1: Exactly the same as Step 1 of Comparative Example 1.

[0044] Step 2: Exactly the same as Step 3 of Comparative Example 1.

[0045] Step 3: Use the molding powder prepared in step 2 to make low thermal conductivity molding particles.

[0046] Step 4: Mix 30 parts of silicon dioxide epoxy molding compound particles and 70 parts of silicon nitride epoxy molding powder by ball milling for 2 hours, put them in a vacuum drying oven for degassing for 1 hour after mixing, and then put the mixture Hot press at 175°C and 100MPa for 5 minutes, put it into a vacuum drying oven after cooling, and post-cure at 175°C for 4 hours. After cooling, a silicon nitride epoxy molding compound sample filled with silica epoxy molding compound particles was obtained. The product properties are shown in Table 1, and the preparation process is shown in Figure 2.

example 3

[0048] Step 1: Exactly the same as Step 1 of Comparative Example 1.

[0049] Step 2: Exactly the same as Step 3 of Comparative Example 1.

[0050] Step 3: Use the molding powder prepared in step 2 to make low thermal conductivity molding particles.

[0051] Step 4: Mix 50 parts of silicon dioxide epoxy molding compound particles and 50 parts of silicon nitride epoxy molding powder by ball milling for 2 hours, put them in a vacuum drying oven for degassing for 1 hour after mixing, and then put the mixture Hot press at 175°C and 100MPa for 5 minutes, put it into a vacuum drying oven after cooling, and post-cure at 175°C for 4 hours. After cooling, a silicon nitride epoxy molding compound sample filled with silica epoxy molding compound particles was obtained. The product properties are shown in Table 1, and the preparation process is shown in Figure 2.

[0052] Table 1: Sample properties of each embodiment

[0053]

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Abstract

The invention relates to a high thermal epoxy molding compounds with heat conducting path and a manufacturing method thereof, which belongs to the field of micro-electronics packaging technology. The 0.5mm-1mm granular of the low thermal epoxy molding compounds is the framework of the epoxy molding compounds, the heat conducting path is formed through the high thermal epoxy molding compounds revolved around the granular of the low thermal epoxy molding compounds; within, the weight percentage ratio of the granular of the thermal epoxy molding compounds and the low thermal epoxy molding compounds is 1:4-2:1. The thermal conductivity of the epoxy molding compounds is greatly improved, and at the same time, the cost of the epoxy molding compounds is decreased through the novel heat exchange architectonics and the using of the cheap silicon dioxide (crystallized) particles, and then the unification of the function and the cost is achieved. The invention can be used for encapsulating various kinds of semiconductor apparatus and the integrated circuit, and with a promising future application.

Description

technical field [0001] The invention relates to a high thermal conductivity epoxy molding compound with a thermal conduction path and a manufacturing method thereof, belonging to the technical field of microelectronic packaging. technical background [0002] Electronic packaging is produced with the generation of circuits, devices and components, and develops with its development. Now, more than 90% of the entire semiconductor device is packaged in plastic, and more than 90% of the plastic packaging material is epoxy molding compound. Epoxy molding compound is a molding powder composed of epoxy resin, curing agent, filler, accelerator, coupling agent, modifier, release agent, flame retardant and colorant. The cross-linking is cured to become a thermosetting plastic, and the semiconductor chip is embedded in it during the injection molding process, and it is given a certain structural shape to become a plastic-encapsulated semiconductor device. The production of transistors,...

Claims

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Application Information

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IPC IPC(8): C08L63/02C08K5/54C08K5/3445C08K3/34
Inventor 傅仁利何洪沈源宋秀峰
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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