Method for making high-temperature micrometre size speckle

A scale and speckle technology, applied in the field of photomechanics, can solve the problems of small application range, large speckle particles, and difficulty in controlling the speckle size, and achieve the effect of variable depth, simple process, and variable size

Inactive Publication Date: 2008-08-13
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the commonly used speckle production methods are mostly artificial speckle production methods, such as spray paint method. The speckle particles obtained by this method are relatively large and can be identified by naked eyes. Microscopic deformation measurement and deformation measurement requirements of microscopic specimens (such as MEMS), and the quality of speckle is closely related to the operator's technical proficiency, it is difficult for beginners to obtain a uniformly distributed high-quality speckle pattern
S A Collette et al. (S A Collette, M ASutton, P Miney, etc., Nanotechnology 15 (2004) 1812-1817) developed a speckle fabrication method that can be used for nanoscale strain measurement. First, a gold film was coated on the surface of a porous alumina plate. Then

Method used

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  • Method for making high-temperature micrometre size speckle
  • Method for making high-temperature micrometre size speckle

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The material of the test piece is a single crystal silicon wafer. After cleaning, a layer of Au film with a thickness of 0.5 μm is coated on the surface of the test piece, and a layer of ZEP520A photoresist with a thickness of 0.5 μm is uniformly coated on the glue machine.

[0023] The test piece is placed on the stage of the electron beam exposure machine, so that the side coated with Au film faces upwards. After repeated attempts to optimize the selection, the acceleration voltage U=20kV, the beam intensity I=430nA, and the magnification are 500, the working distance is 30mm, open the binary image (Figure 3) converted from the simulated speckle image (Figure 2), the exposure time is 10s, and the developer and fixer used are ZED-N50 and 2propand (isopropyl Alcohol) with a volume ratio of 2:3, and then plated with a Cr film with a thickness of 0.3um. After degumming, the desired speckle pattern is finally obtained.

Embodiment 2

[0025] The material of the test piece is a glass sheet. After cleaning, a layer of Ag film is coated on the surface of the test piece with a thickness of 0.3 μm, and a layer of ZEP520A photoresist is uniformly coated on the glue machine with a thickness of 0.5 μm.

[0026] The test piece is placed on the stage of the electron beam exposure machine, so that the side coated with the Ag film faces upwards. After repeated attempts to optimize the selection, the acceleration voltage U=15kV is selected, the beam intensity I=200nA, and the magnification is 1000, the working distance is 25mm, open the binary image (Figure 3) converted from the simulated speckle image (Figure 2), the exposure time is 15s, and the developer and fixer used are ZED-N50 and 2propand (isopropyl Alcohol) with a volume ratio of 2:3, and then plated with a Cu film with a thickness of 0.2 μm, and finally obtained the required speckle pattern after degumming.

Embodiment 3

[0028] The material of the test piece is a single crystal silicon wafer. After cleaning, a layer of SiO is coated on the surface of the test piece. 2 film, with a thickness of 0.1 μm, and uniformly coat a layer of ZEP520A photoresist on a glue spinner with a thickness of 0.1 μm.

[0029] The specimen was placed on the stage of the electron beam exposure machine, so that it was coated with SiO 2 One side of the film is facing upwards, after repeated attempts to optimize the selection, select the acceleration voltage U=10kV, the beam intensity I=100nA, the magnification factor is 2000, the working distance is 18mm, and the opening is converted from the simulated speckle pattern (Figure 2). The binary image (Figure 3) was exposed after clear focus, the exposure time was 8s, the developer and fixer used were ZED-N50 and 2propand (isopropanol) respectively, the volume ratio was 2:3, and then silicon nitride was plated The film, with a thickness of 0.1 μm, is finally degummed to ob...

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Abstract

Provided is a method for producing a high temperature micron-scale speckle, belonging to the technical field of optical measurement mechanics. The invention is technically characterized in preparing the high temperature micron-scale speckle having the advantages of simple operation, flexibility and easy implementation in the instrument environment of an electron beam lithography machine which is a mature commodity. The speckle with properties of variable density, variable depth and variable size can be produced by changing magnification, beam intensity and etching time of the electron beam optical exposure system, suitable for the study of the microscopic deformation behavior of different materials in a high-temperature environment.

Description

technical field [0001] The invention relates to a method for manufacturing high-temperature micron-scale speckles, and belongs to the technical field of photomechanics. Background technique [0002] The speckle transferred or directly etched on the surface of the measured object is used as the carrier of the deformation information of the object surface. In the field of photomechanics, it is the basic element of the digital image correlation method to measure the deformation of the object surface. [0003] At present, the commonly used speckle production methods are mostly artificial speckle production methods, such as spray paint method. The speckle particles obtained by this method are relatively large and can be identified by naked eyes. Microscopic deformation measurement and deformation measurement of microscopic specimens (such as MEMS) are required, and the quality of speckle is closely related to the operator's technical proficiency. It is difficult for beginners to ...

Claims

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Application Information

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IPC IPC(8): G01B11/16G03F7/16G03F7/20
Inventor 谢惠民李艳杰岸本哲戴福隆
Owner TSINGHUA UNIV
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