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Low-temperature sintering type conductive slurry based on semiconductor chip agglutination and its manufacturing technique

A low-temperature sintering and conductive paste technology, which is applied in semiconductor/solid-state device manufacturing, conductive coatings, conductive materials dispersed in non-conductive inorganic materials, etc., can solve the unfavorable reliability and service life of military electronic components, which is not conducive to Improve the reliability of military electronic components, restrict the technological progress of electronic assembly materials and other issues, achieve the effects of excellent printing characteristics and sintering characteristics, excellent thixotropy and anti-settling effects, and improve reliability and service life

Inactive Publication Date: 2008-08-20
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In semiconductor chips, large-scale integrated circuits, and hybrid circuits, large-area ceramic substrate placement and assembly of microwave circuits are used in the existing integrated circuit chip placement process. The existing assembly process causes chip cracking and failure, and the technical state is not good. Stable, which has a very adverse effect on the reliability and service life of military electronic components
It cannot meet the needs of electronic components of weaponry, restricts the technological progress of electronic assembly materials, and is not conducive to improving the reliability of military electronic components

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Conductive paste for die attach

[0021] 1. Selection of glass powder: choose PbO-Al 2 o 3 -SiO 2 Department of glass powder;

[0022] 2. Ball milling and particle size control: Put the glass powder into a ball mill for ball milling, using zirconia balls, material: ball: water = 1:1.3:0.8~1.2;

[0023] 3. Preparation of mixed silver powder: select spherical silver powder and flake silver powder with a particle size of 4 to 10 μm, and mix the spherical and flake silver powder in a weight ratio of 15:85 to prepare the required spherical flake mixed silver powder for subsequent use;

[0024] 4. Organic binder formula and dissolution process: terpineol 65%, tributyl citrate 20%, lecithin 1.5%, ethyl cellulose 5%, hydrogenated castor oil 5%, xylene 3.5%, at 80 ℃ Stir thoroughly for several hours to fully dissolve;

[0025] 5. Sizing process: According to the weight ratio of solid phase composition (mixed silver powder: glass powder=75:25): organic binder is 80:20, put t...

Embodiment 2

[0031] Conductive paste for die attach

[0032] 5. Selection of glass powder: choose PbO-Al 2 o 3 -SiO 2 Department of glass powder.

[0033] 2. Ball milling and particle size control: Put the glass powder into a ball mill for ball milling, using zirconia balls, material: ball: water = 1:1.3:0.8~1.2

[0034] 3. Preparation of mixed silver powder: select spherical silver powder and flaky silver powder with a particle size of 4 to 10 μm, and mix the required spherical flaky silver powder in a weight ratio of 5:95 to prepare the required spherical flaky silver powder for subsequent use;

[0035] 4. Organic binder formula and dissolution process: terpineol 50%, tributyl citrate 35%, lecithin 5%, ethyl cellulose 3%, hydrogenated castor oil 5%, xylene 2%, at 70 ℃ Stir thoroughly for several hours to fully dissolve;

[0036] 5. Sizing process: According to the weight ratio of solid phase composition (mixed silver powder: glass powder=65:35): organic binder is 85:15, put the raw ...

Embodiment 3

[0042] Conductive paste for die attach

[0043] 1. Selection of glass powder: choose PbO-Al 2 o 3 -SiO 2 Department of glass powder.

[0044] 2. Ball milling and particle size control: Put the glass powder into a ball mill for ball milling, using zirconia balls, material: ball: water = 1:1.3:0.8~1.2

[0045] 3. Preparation of mixed silver powder: select spherical silver powder and flake silver powder with a particle size of 4 to 10 μm, and mix the spherical and flake silver powder in a weight ratio of 10:90 to prepare the required spherical flake mixed silver powder for subsequent use;

[0046] 4. Organic binder formula and dissolution process: terpineol 60%, tributyl citrate 15%, lecithin 5%, ethyl cellulose 5%, hydrogenated castor oil 10%, xylene 5%, at 60 ℃ Stir thoroughly for several hours to fully dissolve;

[0047] 5. Sizing process: According to the weight ratio of solid phase composition (mixed silver powder: glass powder=80:20): organic binder is 60:40, put the r...

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Abstract

The invention discloses a semiconductor-chip-based low-temperature sintering type conductive slurry for bonding and the preparing technology thereof. The slurry is composed of a solid phase composition and an organic binder, the weigh proportion of which is 70-90:30-10, the solid phase composition is mixed with sheet-like and ball-shaped composite silver powder and glass powder in a weight proportion of 65-90:35-10, wherein the weight proportion of the sheet-shaped silver powder and the ball-like silver powder is 5-15: 95-85, the average grain diameter of the composite silver powder is less than 4mum, the glass powder is PbO-Al2O3-SiO2 glass powder, the main compositions are: PbO: 95%-60%, Al2O3: 2%-30%, SiO2: 1%-20%, TiO2: 0.5%-20%; the main compositions of the organic binder are: terpilenol: 50%-70%, tributyl citrate: 35%-15%, lecithin: 5%-1%, ethyl cellulose: 8%-3%, hydrogenated castor oil: 5%-10% and dimethylbenzene: 2%-10%. The slurry has high thermal conductivity, high conductivity, low-expansion coefficient and high heat dispersion.

Description

technical field [0001] The invention relates to a low-temperature sintering paste for bonding semiconductor chips, and also relates to a preparation process of the low-temperature sintering paste for bonding semiconductor chips. Background technique [0002] In semiconductor chips, large-scale integrated circuits, and hybrid circuits, large-area ceramic substrate placement and assembly of microwave circuits are used in the existing integrated circuit chip placement process. The existing assembly process causes chip cracking and failure, and the technical state is not good. Stability, which has a very adverse effect on the reliability and service life of military electronic components. It cannot meet the needs of electronic components of weaponry, restricts the technological progress of electronic assembly materials, and is not conducive to improving the reliability of military electronic components. Contents of the invention [0003] The technical problem to be solved by ...

Claims

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Application Information

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IPC IPC(8): H01B1/16C09D5/24C09J9/02C09J191/00H01L21/52H01L21/58C09J101/26
Inventor 甘卫平刘妍张海旺张金玲
Owner CENT SOUTH UNIV
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