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Target material for preparing TFT LCD electrode film and method for preparing target material and electrode

An electrode film and target technology, applied in circuits, electrical components, metal material coating processes, etc., can solve the problems of high price of AlNd, difficult to purify, etc., to meet the requirements of low resistivity, high thermal stability, and improved thermal stability. , the effect of reducing manufacturing costs

Inactive Publication Date: 2008-10-15
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to aim at defects such as the high price of AlNd in the prior art and the difficulty in purification, and utilize the raw material for purifying Nd-mixed rare earth RE (RE=La, Ce, Pr, Nd) to replace Nd to realize the low price of Al alloy. Metal Ni increases its corrosion resistance and oxidation resistance, that is, it provides a suitable Al-RE, Al-Ni or Al-Ni-RE alloy to replace the AlNd target, and uses it to prepare electrode films in semiconductor devices

Method used

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  • Target material for preparing TFT LCD electrode film and method for preparing target material and electrode
  • Target material for preparing TFT LCD electrode film and method for preparing target material and electrode
  • Target material for preparing TFT LCD electrode film and method for preparing target material and electrode

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preparation example Construction

[0032] The preparation method of the electrode thin film provided by the invention is to deposit the electrode thin film on a substrate or other media by means of direct current magnetron sputtering Al-RE, Al-Ni or Al-Ni-RE multi-component composite target material.

[0033] The preparation method of the electrode film provided by the present invention can also be modified according to the requirements of the electrode film, first depositing a layer of refractory metal on the substrate or other media, and then using DC magnetron sputtering Al-RE, Al-Ni or Al-Ni Deposit a layer of Al-RE, Al-Ni or Al-Ni-RE as a conductive layer on the RE multi-component composite target to form a two-layer structure electrode film; or alternatively, deposit a layer of refractory metal on the substrate or other media first , and then use DC magnetron sputtering Al-RE, Al-Ni or Al-Ni-RE multi-component composite target to deposit a layer of Al-RE, Al-Ni or Al-Ni-RE as the conductive layer, and then...

Embodiment 1

[0040] After fully mixing Al, Ni or RE alloy powder with a purity of 99.99wt%, the alloy is heated with an induction or resistance furnace to make it completely melted, and the molten The alloy is atomized into small droplets, and driven by the airflow, it moves quickly to the cooled and rotating substrate at a certain speed, and a green body with a certain density is obtained on the surface of the substrate (generally, the density is about 95% of the theoretical density). The green body is preliminarily shaped, then densified by hot isostatic pressing, and then forged and machined into the final shape.

Embodiment 2

[0042] The fully mixed Al, Ni and RE alloy powders with a purity of 99.99wt% are heated by an induction or resistance furnace to make them completely melted, and after being stirred and homogenized, the alloy liquid is poured into a cavity that is preheated to a certain temperature (Metal mold or sand mold can be used), after it is condensed to room temperature, it is taken out from the cavity, with or without forging, and then machined to the final size.

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Abstract

The invention discloses a target for manufacturing TFT LCD active matrix electrode film, wherein the target is Al-RE alloy, Al-Ni alloy or Al-Ni-Re alloy, and the content of the alloy element in the target is between 1 at percent and 10 at percent. The invention also discloses a manufacture method of the target for manufacturing the TFT LCD active matrix electrode film and a manufacture method for the TFT LCD active matrix electrode film. The invention manufactures a binary alloy target through replacing Nd which is scarce and expensive by Ni and Re which are abundant. The invention can reduce the cost of the target and the electrode film. The manufacture method for the electrode film enables the alloy elements to be solid dissolved therein by a magnetron sputtering method, and the thermal stability of the Al alloy film can be improved. In the manufacture method for the electrode film, during the annealing process, all or partial alloy elements in solid solution state are deposited, in the form of intermetallic compound, between grains, thereby reducing the resistivity and improving the thermal stability of the alloy film.

Description

technical field [0001] The present invention relates to a target used in the preparation of semiconductor device electrodes and a manufacturing method thereof, as well as a method for manufacturing an electrode using the target, in particular to a target used in the preparation of a thin film transistor liquid crystal display (hereinafter referred to as TFT LCD) active matrix electrode and its manufacturing method. A manufacturing method, and a method of manufacturing an electrode using the target. Background technique [0002] At present, the development trend of thin film transistor liquid crystal display (TFT LCD) to large size and high definition requires metal electrode films with very low resistivity as gate electrode and source drain electrode. For example, for a TFT LCD larger than 10 inches, the resistivity of the electrodes needs to be less than 20 μΩcm. At the same time, the substrate in the preparation of large-scale integrated circuits is not enough to provide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/35C23C4/06B22D21/00C23C14/58
CPCH01L29/4908B22D21/007C23C14/16C23C14/3414H01L29/458
Inventor 薛建设梁珂
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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