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Process for preparing manganic manganous oxide nanometer wire by vapor deposition

A nanometer and vapor deposition technology of manganese tetroxide, applied in chemical instruments and methods, from condensed steam, single crystal growth, etc. Effect

Inactive Publication Date: 2008-11-26
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Up to now, we have not retrieved any information on the preparation of one-dimensional Mn by vapor deposition 3 o 4 Literature reports on nanowires and patent reports in this area

Method used

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  • Process for preparing manganic manganous oxide nanometer wire by vapor deposition
  • Process for preparing manganic manganous oxide nanometer wire by vapor deposition
  • Process for preparing manganic manganous oxide nanometer wire by vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1. Collect Mn by using silicon wafer coated with gold film 3 o 4 Nanowires. Before preparation, the coated silicon wafers were ultrasonically cleaned with acetone and then rinsed with deionized water.

[0018] 2. Place the high-purity Mn powder in an aluminum oxide crucible, cover the cleaned silicon chip directly above the Mn source, and the vertical distance between the silicon chip and the evaporation source is 1 mm. Put them together in a horizontal tube furnace.

[0019] 3. Raise the furnace temperature to 950°C and keep it warm for 2 hours. Argon gas with a flow rate of 145 ml / min was filled throughout the growth process. Cool down to room temperature naturally after growth.

[0020] The sample was observed with a scanning electron microscope, and it was found that a thick layer of nanowires was uniformly deposited on the silicon substrate. The nanowires were relatively straight and of high purity, and no particles were observed (Figure 1). Figure 2 is a tra...

Embodiment 2

[0022] 1. Collect Mn by using silicon wafer coated with gold film 3 o 4 Nanowires. Before preparation, the coated silicon wafers were ultrasonically cleaned with acetone and then rinsed with deionized water.

[0023] 2. Place the high-purity Mn powder in an aluminum oxide crucible, cover the cleaned silicon chip directly above the Mn source, and the vertical distance between the silicon chip and the evaporation source is 2 mm. Put them together in a horizontal tube furnace.

[0024] 3. Raise the furnace temperature to 1000°C and keep it warm for 2 hours. Argon gas with a flow rate of 150ml / min was filled throughout the growth process. Cool down to room temperature naturally after growth.

Embodiment 3

[0026] 1. Collect Mn by using silicon wafer coated with gold film 3 o 4 Nanowires. Before preparation, the coated silicon wafers were ultrasonically cleaned with acetone and then rinsed with deionized water.

[0027] 2. Place the high-purity Mn powder in an aluminum oxide crucible, cover the cleaned silicon chip directly above the Mn source, and the vertical distance between the silicon chip and the evaporation source is 1 mm. Put them together in a horizontal tube furnace.

[0028] 3. Raise the temperature of the furnace to 900°C and keep it warm for 4 hours. Argon gas with a flow rate of 50 ml / min was filled throughout the growth process. Cool down to room temperature naturally after growth.

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Abstract

The invention relates to a vapor deposition method for preparing trimanganese tetroxide nanowire, which belongs to the field of nanometer material preparation technology. High purity Mn powder is placed in an aluminium sesquioxide crucible; cleaned gold-plating silicon chip is adopted to cover right above the Mn source and has a vertical distance of 1-2mm with an evaporation source. Then, all materials are put in a horizontal pipe typed stove; the temperature of the stove is raised up to 900-1000 DEG C and then preserved thermally for 2-4 h; argon with a flow rate of 50-150ml / min is inlet to the stove in the process of developing the film; after the development, the stove is naturally cooled to the room temperature. A great deal of high purity Mn3O4 nanowire is obtained by the invention on the gold-plating silicon chip; the prepared Mn3O4 nanowire has a four-sided structure, the diameter of the nanowire is about 50-260nm and the length is 8-12Mum; a high quality of crystallization is possessed; the developing direction is (211). By being shown by a magnetic measurement result, curie temperature and coercive force of the single-dimension Mn3O4 nanowire are all higher than those of body materials.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and mainly provides a preparation method of trimanganese tetraoxide nanowires. Background technique [0002] In recent years, oxide nanomaterials of transition metals (Mn, Co, Ni, Pe, etc.) have become an important direction of nanomaterials research because of their unique optical, electrical, thermal, magnetic and other properties. Among them, manganese tetraoxide (Mn 3 o 4 ) Nanomaterials have a large interface, uniform and highly active surface, making it a highly active catalyst, which can be used for the oxidation of methane and the reduction of nitrobenzene; it can also be used as an efficient and cheap scavenging NO x and CO catalysts to effectively reduce the level of air pollution. In addition, as the recording density of magnetic recording materials is required to be higher and higher, the size of the recording unit becomes smaller and smaller, and has recently been...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B29/62C30B23/00
Inventor 常永勤俞大鹏
Owner UNIV OF SCI & TECH BEIJING
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