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Human eye safe Raman laser based on lanthanum silicate crystal 1.3 mu m electrooptical switch

A Raman laser, eye-safe technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of low light damage threshold, limit the output of eye-safe laser power, etc., and reach the light damage threshold High, high laser output efficiency, high efficiency laser output effect

Inactive Publication Date: 2008-12-31
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It uses Raman crystals to convert 1.32μm Nd:YAG lasers to 1.5μm eye-safe wavelengths, and at the same time makes up for some defects of gas and liquid Raman lasers. It has full curing, low threshold, high conversion efficiency, and high repetition frequency. , small size, light weight, high reliability, etc., but the electro-optic switch currently used at 1.3 microns has certain defects, such as the low threshold of anti-photodamage, which limits the power output of the eye-safe laser

Method used

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  • Human eye safe Raman laser based on lanthanum silicate crystal 1.3 mu m electrooptical switch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1: La 3 Ga 5 SiO 14 Preparation of electro-optic crystals.

[0029] La 2 o 3 , Ga 2 o 3 , SiO 2 As the raw material, according to the chemical equation: 3La 2 o 3 +5 Ga 2 o 3 +2 SiO 2 = 2 La 3 Ga 5 SiO 14 According to the stoichiometric ratio or Ga 2 o 3 Excessive 1~2wt.% Weigh the raw materials, mix the prepared raw materials evenly, place them in a platinum crucible, sinter at a temperature of 1100 ° C for 10 hours, then grind the sintered raw materials again, then press them into pieces, and place them in a platinum crucible again , and sintered at 1100°C for 10 hours, you can get La 3 Ga 5 SiO 14 of polycrystalline material. Put the configured La3 Ga 5 SiO 14 The polycrystalline material is placed in the iridium crucible, the single crystal furnace is evacuated, filled with protective gas nitrogen, and heated up; the medium frequency heating method is used, and the La in the c direction is used. 3 Ga 5 SiO 14 Seed crystal, the pullin...

Embodiment 2

[0032] Example 2: BaWO 4 Crystal preparation.

[0033] Using BaCO 3 , WO 3 As the starting material according to the chemical equation: BaCO 3 +WO 3 = BaWO 4 +CO 2 , formulated to grow BaWO in a stoichiometric ratio 4 Crystalline polycrystalline material (WO 3 Excessive 1wt.%), the prepared raw materials are placed in a platinum crucible, sintered at a temperature of 1100 ° C for 10 hours, then the sintered raw materials are ground again, then pressed into pieces, placed in a platinum crucible again, and sintered at 1100 ° C for 10 hours , you can get BaWO 4 of polycrystalline material. Put the configured BaWO 4 The polycrystalline material is placed in the iridium crucible, the single crystal furnace is evacuated, filled with protective gas nitrogen, and heated up; the medium frequency heating method is used, and the BaWO in the a direction is used 4 Seed crystal, the pulling speed of crystal growth is 0.5-2 mm / hour, the rotation speed is 10-30 rpm, and BaWO is obt...

Embodiment 3

[0036] Example 3: SrWO 4 Crystal preparation.

[0037] Using SrCO 3 , WO 3 For the initial raw material according to the chemical equation: SrCO 3 +WO 3 =SrWO 4 +CO 2 , growing SrWO in a stoichiometric configuration 4 Crystalline polycrystalline material (WO 3 Excessive 1wt.%), the configured raw materials are placed in a platinum crucible, sintered at a temperature of 1100 ° C for 10 hours, then the sintered raw materials are ground again, then pressed into pieces, placed in a platinum crucible again, and sintered at 1100 ° C for 10 hours , you can get SrWO 4 of polycrystalline material. Put the configured SrWO 4 The polycrystalline material is placed in the iridium crucible, the single crystal furnace is evacuated, filled with protective gas nitrogen, and heated up; the medium frequency heating method is used, and the SrWO in the c direction is used 4 For the seed crystal, the pulling speed for crystal growth is 0.5-2 mm / hour, and the rotation speed is 10-30 revol...

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Abstract

The invention relates to a safe-to-eye Raman laser device based on a La3Ga5SiO14 (LGS) crystal 1.3 Mum electrooptical switch, pertaining to the field of crystal growth and crystal component technology. A 1.3 Mum laser is generated by a flash lamp or a laser diode pump Nd:YAG crystal or transparent ceramics, Nd:YAP crystal, Nd:GdVO4 or Nd:YxGd1-xVO4 crystal, and the laser is changed into a pulse laser by taking a La3Ga5SiO14 crystal as the electrooptical switch, and safe-to-eye 1.5 Mum-wavelength laser is generated by further using the Raman frequency shift effect of a scheelite structural crystal or zirconite structural crystal. The laser device fabricated by the invention is characterized by simple and compact structure, low threshold value, high output power, good stability, high conversion efficiency, good beam quality, simple operation, low cost and convenience for industrialized mass production, etc.

Description

technical field [0001] The invention relates to an electro-optic switch of a new wave band and the application of Raman crystals, in particular to lanthanum silicate electro-optic crystals and Raman crystals with scheelite and zircon structures, and belongs to the technical field of crystal growth and crystal devices. Background technique [0002] Eye-safe lasers have a wide range of applications. Among them, the 1.5μm laser is the most representative. At present, there are three technical approaches to achieve 1.5μm wavelength laser: one is the solid-state laser that directly outputs 1.5μm wavelength, and the more mature erbium glass laser directly outputs 1.54μm laser. The device has a compact structure and good reliability. However, due to the limitation of the thermal characteristics of the matrix glass material, it is difficult to greatly increase the repetition rate of work. Moreover, the quality of the domestic matrix glass material cannot meet the practical requirem...

Claims

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Application Information

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IPC IPC(8): H01S3/00H01S3/08H01S3/092H01S3/0941H01S3/06H01S3/16H01S3/115H01S3/108H01S3/10
Inventor 张怀金王继扬方新张少军尹鑫蒋民华
Owner SHANDONG UNIV
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