Method for growing AlN and AlGaN on InAlN buffer layer

A buffer layer and regrowth technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of difficult to grasp growth conditions, narrow material growth window, and poor growth repeatability. The effect of improving the flatness of the interface, improving the crystal quality, and improving the level of weapons and equipment
CN101345192AActive Publication Date: 2009-01-14THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Publication Date
2009-01-14

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Abstract

The invention discloses a method used for growing AlN and AlGaN on an InAlN buffer layer, which grows high-quality AlN and AlGaN on a substrate by using a metal organic chemical gas deposition external extension growth system. The method of the invention comprises the process steps as follows: (1) the InAlN buffer layer is directly grown on the substrate or the InAlN buffer layer grows after the AlN or AlGaN nucleation layer grows; (2) high-quality AlN or AlGaN crystallizing layer grows on the InAlN buffer layer; (3) multi-layer growth of the device structure is carried out. When the method of the invention is used for growing AlN or AlGaN crystal, the staggering density of the material is reduced, the interface smoothness is improved, the quality of the material is improved; meanwhile, the growth window is increased, the growth of the material is easier; furthermore, the performance of sunblind-typed ultraviolet detector is improved further; the weapon equipment level of national detector is greatly improved; furthermore, the detector is the main part of civil fire monitoring systems.
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Description

technical field

[0001] The invention relates to a method for growing AlN and AlGaN on an InAlN buffer layer, and belongs to the field of nitride-based material growth and device fabrication. Background technique

[0002] Due to the wide bandgap, low dielectric constant, high temperature resistance, corrosion resistance, and radiation resistance of nitride materials, they are very suitable for making radiation-resistant, high-frequency, high-power, and high-density integrated electronic devices. In terms of optoelectronic devices, nitride materials also have excellent performance. First of all, GaN does not absorb visible light, and the ultraviolet detector made of it can be blinded to visible light, does not require a filter system, and does not need to be made into a shallow junction, which can greatly improve Quantum efficiency, now GaN-based ultraviolet detectors have begun to commercialize; secondly, AlGaN with a high Al composition greater than 50% can achieve solar bli...

Claims

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