Method for growing AlN and AlGaN on InAlN buffer layer

A buffer layer and regrowth technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of difficult to grasp growth conditions, narrow material growth window, and poor growth repeatability. The effect of improving the flatness of the interface, improving the crystal quality, and improving the level of weapons and equipment

Active Publication Date: 2009-01-14
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to literature reports, the general method to solve the above-mentioned AlN and AlGaN heteroepitaxy problems is to adjust the molar ratio, growth temperature, gas flow rate, flow rate, etc. of group V elements and group III elements. The growth window of the material becomes extremely narrow, the growth cond

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for growing AlN and AlGaN on InAlN buffer layer
  • Method for growing AlN and AlGaN on InAlN buffer layer
  • Method for growing AlN and AlGaN on InAlN buffer layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] What the growth equipment of the present invention used is metal-organic chemical vapor deposition (MOCVD) epitaxial growth system, and the used substrate of material growth is sapphire, Si, SiC etc., and its growth atmosphere is trimethylgallium (TMGa), trimethylaluminum (TMAl ), trimethylindium (TMIn) and ammonia (NH3) as sources of Ga, Al, In and N respectively, with nitrogen, hydrogen or nitrogen-hydrogen mixture as carrier gas.

[0013] Below is Figure 1-6 Growth steps and structural conditions of each structure shown: Among them, the growth methods of the InAlN buffer layer, the AlN layer and the AlGaN layer all adopt conventional growth methods. exist Figure 1-6 Among them, 1 is the AlN layer, 2 is the InAlN buffer layer, 3 is the substrate, and 4 is the AlGaN layer.

[0014] figure 1 In order to grow a layer of InAlN buffer layer 2 on the substrate 3, and then grow the AlN layer 1, this layer of AlN can be grown by first growing a low-temperature AlN layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method used for growing AlN and AlGaN on an InAlN buffer layer, which grows high-quality AlN and AlGaN on a substrate by using a metal organic chemical gas deposition external extension growth system. The method of the invention comprises the process steps as follows: (1) the InAlN buffer layer is directly grown on the substrate or the InAlN buffer layer grows after the AlN or AlGaN nucleation layer grows; (2) high-quality AlN or AlGaN crystallizing layer grows on the InAlN buffer layer; (3) multi-layer growth of the device structure is carried out. When the method of the invention is used for growing AlN or AlGaN crystal, the staggering density of the material is reduced, the interface smoothness is improved, the quality of the material is improved; meanwhile, the growth window is increased, the growth of the material is easier; furthermore, the performance of sunblind-typed ultraviolet detector is improved further; the weapon equipment level of national detector is greatly improved; furthermore, the detector is the main part of civil fire monitoring systems.

Description

technical field [0001] The invention relates to a method for growing AlN and AlGaN on an InAlN buffer layer, and belongs to the field of nitride-based material growth and device fabrication. Background technique [0002] Due to the wide bandgap, low dielectric constant, high temperature resistance, corrosion resistance, and radiation resistance of nitride materials, they are very suitable for making radiation-resistant, high-frequency, high-power, and high-density integrated electronic devices. In terms of optoelectronic devices, nitride materials also have excellent performance. First of all, GaN does not absorb visible light, and the ultraviolet detector made of it can be blinded to visible light, does not require a filter system, and does not need to be made into a shallow junction, which can greatly improve Quantum efficiency, now GaN-based ultraviolet detectors have begun to commercialize; secondly, AlGaN with a high Al composition greater than 50% can achieve solar bli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/205H01L31/18
CPCY02P70/50
Inventor 冯志宏刘波尹甲运
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap