Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Deposition technique of arc ion plating enhanced by magnetic field

A technology of arc ion plating and deposition process, which is applied in the direction of ion implantation plating, metal material coating process, sputtering plating, etc., which can solve the inhomogeneity of plasma transmission space distribution and affect the performance of coating and film and life, limiting the application range of arc ions, etc., to achieve the effect of improving the transmission space distribution, increasing the utilization rate of the target material, and improving the uniformity of deposition

Inactive Publication Date: 2009-02-11
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
View PDF0 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since arc ion plating mainly depends on the discharge of cathode spots on the target surface to deposit the required film, it is a point source. Although these traditional methods of simply applying a magnetic field near the target surface can effectively control the arc spot on the target surface movement, but it does not solve the inhomogeneity of the plasma distribution in the transmission space. At the same time, with the increase of the magnetic field strength, some ions are lost with the distribution of the magnetic field around the target, resulting in the ion density at the substrate. decline
Moreover, long-term etching is easy to form etching tracks on the target surface, resulting in uneven etching of the target.
[0005] Although arc ion plating technology has many advantages, due to the existence of large particles in arc ion plating, it seriously affects the performance and life of coatings and films.
Therefore, how to solve the problem of large particles in cathodic arc plating has a great influence on the development of cathodic arc, which has become the main topic of later development and the main factor limiting the application range of arc ions.
At present, the magnetic filtration technology is widely used, but the magnetic filtration technology reduces the transmission efficiency of the plasma, reduces the deposition rate, and requires additional equipment at the same time, and the cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deposition technique of arc ion plating enhanced by magnetic field
  • Deposition technique of arc ion plating enhanced by magnetic field
  • Deposition technique of arc ion plating enhanced by magnetic field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Example 1: Improved Traditional Deposition Process

[0046] The method of simply applying a magnetic field near the target surface is used to control the movement of the arc spot on the target surface, see appendix figure 1 , The arc ion plating deposition device mainly includes a vacuum chamber 1, a substrate (sample) 2, a magnetic ring 3, a target material 4, nickel-plated pure iron 5, an electromagnetic coil 6, an inlet pipe 7, an outlet pipe 8, and an arc coil 9. Arc starting needle 10, etc., set substrate (sample) 2, magnetic ring 3, target 4, arc starting needle 10 in vacuum chamber 1, the front of target 4 is opposite to substrate (sample) 2, target 4 Electromagnetic coil 6 is arranged on the back, and nickel-plated pure iron 5 is installed in the middle of electromagnetic coil 6. The circulating water circulates through water inlet pipe 7 and outlet pipe 8 to cool target material 4. Nickel-plated pure iron 5 and electromagnetic coil 6 are installed on Inside th...

Embodiment 2

[0049] The difference from Example 1 is that a new magnetic field enhancement process is adopted, consisting of two sets of magnetic field generating devices, one set is placed behind the target, and the magnetic field generating device is the same as that in Embodiment 1, that is, it is installed in the middle of the electromagnetic coil 6 Nickel-plated pure iron 5 is mainly used to control the movement of the arc spot. Another set of magnetic field enhancement coils 11 is placed on the back of the substrate (sample) 2 in the vacuum chamber 1. It consists of a coil and is mainly used to restrict the transmission of plasma. , improve the transmission efficiency and the ion density near the substrate, improve the uniformity of ion distribution near the substrate, and achieve the purpose of increasing the film deposition rate and deposition uniformity. The sample is placed near the front of the coil, see attached Figure 4 .

[0050] The electromagnetic coil placed in the vacuu...

Embodiment 3

[0053] The difference from Example 1 is that a new magnetic field enhancement process is adopted, consisting of two sets of magnetic field generating devices, one set is placed behind the target, and the magnetic field generating device is the same as that in Embodiment 1, that is, it is installed in the middle of the electromagnetic coil 6 Nickel-plated pure iron 5, another set of magnetic field generating device (magnetic field enhancing coil 11) is the same as that in Embodiment 2, and the process of magnetic field configuration and adjustment is also the same. The difference is that the magnetic field enhancement coil 11 is placed in front of the substrate (sample) 2 in the vacuum chamber 1, see appendix Figure 7 ,8. The effect of placing the sample behind the coil is different from that of Example 2, because the trajectory of the charged particles is different due to the difference in the configuration of the magnetic field near the sample, and the structural properties ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of film preparation, in particular to a magnetic field enhanced arc ion plating deposition technology for improving the deposition rate and the deposition uniformity of the film, reducing large particle emission of a target material and improving the etching uniformity of the target material. An arc ion plating deposition device is provided with two sets of magnetic field generating devices, wherein, one set of the device is put at the back of the target material, and the other set is put inside a vacuum chamber, and deposition is carried out on a matrix by means of a coupling magnetic field generated by the two sets of coupling magnetic field generating devices. By virtue of the coupling magnetic field generated by the two sets of coupling magnetic field generating devices, the technology solves the non-uniformity of plasma distribution in a transmission space in the conventional technology, improves the deposition rate and the deposition uniformity of the film, reduces the large particle emission of the target material and the large particle content of the film, improves the film quality, expands the range of the process parameters and provides conditions for preparing films with different properties.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a magnetic field-enhanced arc ion plating deposition process, which is used to increase the deposition rate and deposition uniformity of the film, reduce the emission of large particles of the target material, and improve the etching uniformity of the target material. Background technique [0002] Arc ion plating is one of the most important technologies in industrial coating production and scientific research. Due to its simple structure, high ionization rate (70%-80%), high energy of incident particles, good diffraction, it can realize low temperature deposition, etc. A series of advantages have enabled the arc ion plating technology to develop rapidly and be widely used, showing great economic benefits and industrial application prospects. [0003] Vacuum arc discharge is a low-voltage high-current discharge, and the behavior of the vacuum arc is controlled by many fast-moving,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/32C23C14/54
Inventor 肖金泉郎文昌孙超宫骏杜昊赵彦辉闻立时
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products