Implementation of avalanche photo diodes in (BI) CMOS processes
A photodiode and process technology, applied in the field of medical imaging, can solve problems such as large volume, design rule obstruction, poor working effect, etc., and achieve the effect of increasing detection efficiency
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[0023] reference figure 2 with 3 They show photodiodes 10 that are made to suppress, reduce, eliminate, etc., the early edge breakdown associated with conventional photodiodes driven in conventional Geiger or other modes, such as avalanche photodiodes (APD). . figure 2 Depicts a side view of the photodiode 10, image 3 A top view of the photodiode 10 is depicted.
[0024] The photodiode 10 includes a semiconductor layer 12 (for example, silicon (Si), germanium (Ge), gallium arsenide (GaAs), etc.), which is formed (for example, by photolithography, lithography, etc.) On the substrate 14 (for example, silicon, glass, sapphire and other wafers). The semiconductor layer 12 includes an n-type (n-doped) well 16 arranged adjacent to the p-type (p+ doped) region 18, and a pn junction is formed between the p-type region 18 and the n-type well 16. Such regions are formed by known techniques such as ion implantation (in which ions are implanted, thereby changing the physical properties of ...
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