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Method for growing silicon ingot

A technology for silicon ingots and single-crystal silicon ingots, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as increasing process costs, and achieve the effects of improving characteristics and yield, preventing peeling, and good characteristics

Inactive Publication Date: 2009-05-20
硅得荣株式会社
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Problems solved by technology

This may increase process cost
Also, even if a quartz crucible already has the specific internal surfaces required, the specific internal surfaces may not function well with variations in the single crystal growth process

Method used

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  • Method for growing silicon ingot
  • Method for growing silicon ingot
  • Method for growing silicon ingot

Examples

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Embodiment Construction

[0021] Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the shapes of elements are exaggerated for clarity of illustration, and like reference numerals refer to like elements throughout.

[0022] figure 1 is a schematic cross-sectional view of a silicon ingot growing apparatus used in a method for growing a silicon ingot according to an exemplary embodiment.

[0023] see figure 1 As shown, silicon ingot growing apparatus 100 includes main body 110 , quartz crucible 120 , support 125 , upper electromagnet 130 , lower electromagnet 140 , heater 150 , insulating wall 160 and cables 170 .

[0024] The...

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Abstract

Provided is a method for growing a silicon ingot. According to an exemplary method, the method includes charging silicon in a quartz crucible, melting the silicon by heating the quartz crucible and applying a magnetic field of 500 Gauss or higher in the quartz crucible, and growing a single crystalline silicon ingot from the melted silicon while applying a magnetic field lower than 500 Gauss in the quartz crucible. As a result, by appropriately controlling the internal pressure of the quartz crucible or the application time and the magnitude of the magnetic field, it is possible to easily accelerate crystallization of the internal surface of the quartz crucible to thereby prevent flaking of the crystals. Consequently, it is possible to grow the silicon ingot of good properties.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, and more particularly, to a semiconductor chip manufacturing process. Background technique [0002] Silicon (Si) chips are typically manufactured by growing single crystal silicon using the Czochralski process. The Czochralski process is a method for growing single crystal silicon by melting polycrystalline silicon in a quartz crucible to prepare a silicon melt, dipping a silicon seed crystal mounted on a cable into the silicon In the melt, the wire was slowly pulled up while rotating the wire to obtain a cylindrical monocrystalline silicon block. This monocrystalline silicon block is called a silicon ingot. Silicon chips are prepared by cutting slices of the silicon ingot perpendicular to the crystal growth direction, grinding to remove damage caused during slicing, and polishing to provide higher flatness to the rough chip surface. Therefore, in order to manufacture high-quali...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B15/00C30B15/14
CPCC30B29/06C30B30/04C30B15/305C30B15/00
Inventor 黄晸河崔日洙金尚熹
Owner 硅得荣株式会社
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