Growth method for fluxing medium of boron phosphate single crystal
A growth method, boron phosphate technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of difficult to grow large-sized transparent crystals, unable to obtain satisfactory optical properties, easy to form inclusions, etc., to achieve UV cut-off The effect of short wavelength, moderate hardness, and not easy to break
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Embodiment 1
[0027] Solid phase synthesis of boron phosphate compounds:
[0028] It is synthesized by high-temperature solid-state reaction method, and its chemical reaction equation is:
[0029] NH 4 h 2 PO 4 +H 3 BO 3 =BPO 4 +NH 3 +3H 2 O [reaction formula (1) above]
[0030]Weigh 115.03g (1.0mol) of NH 4 h 2 PO 4 and 61.833g (1.0mol) of H 3 BO 3 Put it into a mortar, mix and grind it thoroughly, then put it into a corundum crucible, slowly raise the temperature to 550°C in a muffle furnace, the heating rate is lower than 30°C / hour, keep the temperature constant for 24 hours, then cool down and take out the crucible, at this time, The sample is loose, take out the sample and re-grind it evenly, then raise the temperature to 800°C-900°C again, and keep the temperature constant for 24-48 hours. Then the temperature is lowered to room temperature, the crucible is taken out, the sample is put into a mortar, crushed and ground to obtain boron phosphate compound powder.
[0031]...
Embodiment 2
[0038] Boron Phosphate Crystal Growth:
[0039] According to boron phosphate: Li 2 O:MoO 3 =1.0:0.2:1.5, adopt the synthetic boron phosphate compound of embodiment 1, select analytically pure Li for use 2 CO 3 、MoO 3 As a flux, weigh 211.56g BPO 4 , 29.56g Li 2 CO 3 , 431.82g MoO 3 , melt the above mixture in batches in φ60×60mm platinum crucibles, then put the crucibles into the crystal growth furnace, cover the opening on the top of the furnace with the furnace cover, and leave a space at the corresponding position between the furnace cover and the center of the crucible for The small hole for the seed rod to enter and exit, while leaving a light hole and an observation hole on both sides of the center of the furnace cover, heat up to complete melting, keep the temperature at a constant temperature for 24 hours to fully homogenize the high-temperature solution, and then cool down to 2°C above the saturation temperature ;Fix the cut boron phosphate seed crystal on the...
Embodiment 3
[0041] Boron Phosphate Crystal Growth:
[0042] According to boron phosphate: Li 2 O:MoO 3 =1.0:1.0:0.2, adopt the synthetic boron phosphate compound of embodiment 1, select analytically pure Li for use 2 CO 3 、MoO 3 As a flux, weigh 211.56g BPO 4 , 147.78g Li 2 CO 3 , 56.56g MoO 3 , melt the above mixture in batches in φ60×60mm platinum crucibles, then put the crucibles into the crystal growth furnace, cover the opening on the top of the furnace with the furnace cover, and leave a space at the corresponding position between the furnace cover and the center of the crucible for The small hole for the seed rod to enter and exit, while leaving a light hole and an observation hole on both sides of the center of the furnace cover, heat up to 800°C, keep the temperature for 24 hours and then drop it to 15°C above the saturation temperature, and place the cut boron phosphate seeds The crystal is fixed on the lower end of the seed rod with a platinum wire, and slowly descends ...
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