Semiconductor nano wire and micro optical fiber composite structure micro laser

Abstract

The invention discloses a micro laser with a combined structure of semiconductor nanometer wire and micrometer optical fiber. The optical fiber is drawn to be thin in micron dimension; under a microscope, the micrometer optical fiber is operated to form a ring-shaped knot; and the semiconductor nanometer wire is attached to the ring-shaped knot to form the combined structure. The fluorescence of the semiconductor nanometer wire is excited by utilizing the evanescent wave outside the micrometer optical fiber, and when the fluorescence forms resonance in the ring-shaped knot and the laser strength is higher than the threshold value, laser is generated. The pump light is inputted from the end of the tapered optical fiber forming the ring-shaped knot, which is not drawn to be thin, after passing through the ring-shaped knot, is outputted from the other tapered optical fiber in the evanescent wave coupling mode. The laser combines the advantages of high gain of the semiconductor nanometer wire and low loss of the silicon oxide micrometer-nanometer optical fiber; and because the input and the output of the signal are performed by the micrometer optical fiber formed by the tapering of the common optical fiber, the high and stable input-output coupling can be acquired.

Description

technical field [0001] The invention relates to semiconductors, micro-optical elements and systems, in particular to a composite structure micro-laser based on the ring junction of semiconductor nanowires and micro-fibers. Background technique [0002] Lasers based on semiconductor nanowires such as ZnO, CdS, and GaN have attracted extensive attention of researchers in recent years. At present, the resonant cavity used to realize the laser oscillation of the laser mainly includes F-P cavity, pseudo-ring cavity and so on. In these studies, semiconducting nanowires not only serve as the gain medium but also host the laser resonator. Due to the small diameter of the nanowire and the existence of the substrate, the evanescent wave outside the nanowire structure will diffuse out from the edge of the nanowire or into the substrate, causing strong losses and limiting the quality factor of the resonator , increasing the threshold of the laser. For semiconductor nanowire lasers, a...

AI Technical Summary

Problems solved by technology

Due to the small diameter of the nanowire and the existence of the substrate, the evanescent wave outside the nanowire structure will diffuse out from the edge of the nanowire or into the substrate, causing strong losses and limiting the quality factor of the resonator , increasing the threshold of the laser

For semiconductor nanowire lasers, there is still a problem in the research that it is difficult to obtain high-efficiency light input and output coupling, which is also an aspect that limits its wider application

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