Method for making silicone base integrable miniature glucose sensor
The technology of a glucose sensor and a manufacturing method is applied in the manufacturing field of a silicon-based micro-glucose sensor that can be integrated, and achieves the effects of being favorable for ion exchange reaction, simple in preparation and low in cost.
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Embodiment 1
[0038] 1. Fabrication of high aspect ratio macroporous silicon microchannels:
[0039] (1) Electrochemical process: Deposit Si on the surface of silicon substrate 3 N 4 Mask, photoetching the Si-MCP window position; take it out and clean it, and then use potassium hydroxide solution for 5 minutes of pre-etching treatment, and an inverted quadrangular truss structure can be formed in the window; use an electrochemical etching device, photocatalyze deep under the irradiation of a halogen lamp Corrosion 8h to form Si-MCP.
[0040] (2) Structure protection: the prepared Si-MCP was annealed at 500° C. in an argon atmosphere of RTA (rapid thermal annealing) system for 6 minutes to enhance the mechanical stability of the Si-MCP structure.
[0041] (3) Thinning of the back side: open a window on the back side, and use potassium hydroxide solution to etch the back side of the substrate until it meets the Si-MCP deep groove structure etched deeply on the front side of the substrate. ...
Embodiment 2
[0057] 1. Fabrication of high aspect ratio macroporous silicon microchannels:
[0058] (1) Electrochemical process: Deposit Si on the surface of silicon substrate 3 N 4 Mask, photoetching the position of Si-MCP window; take it out and clean it, and then use potassium hydroxide solution to pre-etch for 2 minutes, and an inverted quadrangular truss structure can be formed in the window; use an electrochemical etching device, photocatalyze deep under the irradiation of a halogen lamp Corrosion 6h to form Si-MCP.
[0059] (2) Structure protection: the prepared Si-MCP was annealed in RTA (rapid thermal annealing) system at 300° C. for 6 min in an argon atmosphere to enhance the mechanical stability of the Si-MCP structure.
[0060] (3) Thinning of the back side: open a window on the back side, and use potassium hydroxide solution to etch the back side of the substrate until it meets the Si-MCP deep groove structure etched deeply on the front side of the substrate.
[0061] (4) U...
Embodiment 3
[0076] 1. Fabrication of high aspect ratio macroporous silicon microchannels:
[0077] (1) Electrochemical process: Deposit Si on the surface of silicon substrate 3 N 4 Mask, photolithographic Si-MCP window position; take it out and clean it, and then pre-etch with tetramethylammonium hydroxide solution for 3 minutes, and an inverted quadrangular truss structure can be formed in the window; using an electrochemical etching device, under the irradiation of a halogen lamp Photocatalytic deep etch for 10h to form Si-MCP.
[0078] (2) Structure protection: the prepared Si-MCP was annealed at 400° C. in an argon atmosphere of RTA (rapid thermal annealing) system for 6 minutes to enhance the mechanical stability of the Si-MCP structure.
[0079] (3) Thinning of the back side: open a window on the back side, and use potassium hydroxide solution to etch the back side of the substrate until it meets the Si-MCP deep groove structure etched deeply on the front side of the substrate.
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