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Method for synthesizing nano cable structure of silica-coated single-walled carbon nano tube

A single-walled carbon nanotube and nano-cable technology, applied in the directions of silicon oxide, silicon dioxide, insulating cables, etc., can solve the problems of difficult movement and assembly, and achieve the effect of strong maneuverability and simple process.

Inactive Publication Date: 2009-08-26
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method avoids the dispersion problem of single-wall carbon nanotubes, but because the outer layer is deposited on the upper surface of the carbon tube substrate, the obtained nanostructure is not a coaxial nanocable in the strict sense; and the method involves The chemical process of the carbon tube will have a certain impact on the electronic structure of the carbon tube; in addition, the obtained nanostructure is deposited on the substrate, and it is difficult to move and assemble it.

Method used

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  • Method for synthesizing nano cable structure of silica-coated single-walled carbon nano tube
  • Method for synthesizing nano cable structure of silica-coated single-walled carbon nano tube
  • Method for synthesizing nano cable structure of silica-coated single-walled carbon nano tube

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Effect test

Embodiment 1

[0019] Put the mixed powder of graphite, 2.0at.% silicon powder, 2.0at.% catalyst (molar ratio: Fe: Co: Ni = 1: 1: 5) and 0.1 at.% iron sulfide growth promoter into the anode graphite circle The cathode is a graphite rod, the reactor is filled with 100Torr hydrogen, the arcing current is 120A DC, and the shortest distance of ~2mm and the included angle of ~30° are maintained between the two electrodes. The characterization results of the obtained product are as follows figure 1 shown. The length of the nano-cable grown under this preparation condition is several to tens of microns, the diameter is about 20nm, the number of single-walled carbon nanotubes in the cable core is between 1-5, the outer shell of the cable is continuous, and the The outer cladding layer is amorphous SiO X ( X ≤2).

Embodiment 2

[0021] Put the mixed powder of graphite, 5.0at.% silicon powder, 4.0at.% catalyst (molar ratio: Fe: Co: Ni=1: 1.5: 5) and 4.0at.% iron sulfide growth promoter into the anode graphite circle The cathode is a graphite rod, the reactor is filled with 500Torr hydrogen, the arcing current is 200A DC, and the shortest distance between the two electrodes is 2mm and the included angle is 40°. The characterization results of the obtained product are as follows figure 2 shown. The nanocables grown under this preparation condition have a length of tens of microns and a diameter of 20-50 nm. The outer layer of the cable is discontinuous, and the single-walled carbon nanotubes in the core can be seen exposed. The core of the cable is between 1 and 5 single-walled carbon nanotubes, and the outer cladding layer of the cable is amorphous SiO X ( X ≤2).

Embodiment 3

[0023] Put the mixed powder of graphite, 7.0at.% silicon powder, 10.0at.% catalyst (molar ratio: Fe: Co: Ni = 1: 2: 5) and 1.0 at.% iron sulfide growth promoter into the anode graphite circle The cathode is a graphite rod, the reactor is filled with 50Torr hydrogen, the arcing current is 30A DC, and the shortest distance of ~2mm and the included angle of ~60° are maintained between the two electrodes. The characterization results of the obtained product are as follows image 3 shown. The length of the nano-cables grown under this preparation condition is several microns, the diameter is 50-100nm, and there are usually bifurcations along the diameter direction, mostly in the shape of dendrites, and the core of the cable is a single-walled carbon nanotube with 1-5 roots. Between, the outer cladding layer of the cable is amorphous SiO X ( X ≤2).

[0024] Experiments show that the catalyst in the present invention can use one or more than two kinds of transition group elements...

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Abstract

The invention relates to synthesis technology of nano cable, and in particular provides a preparation method for synthesizing the nano cable structure of the amorphous silica-coated single-walled carbon nano tube by an arc discharge method. The preparation method comprises the following steps: adopting a cathode and anode DC arc discharge mode to realize in-situ preparation; the anode is a consumptive anode formed by pressing graphite, silicon powder, catalyst and growth promoter; after arc starting discharge, carrying out coevaporation of raw materials including the graphite, the silicon powder, the catalyst and the growth promoter; and completing in-situ synthesis of the nano cable structure of one or more silica-coated single-walled carbon nano tubes. Silica has the characteristics of good thermal stability, high dielectric constant, small drain current and high compressive strength, and the like. and is an ideal material of insulation layers used in nano devices such as the nano cable and a field effect transistor; in addition, a core body of the developed nano cable consists of one or more single-walled carbon nano tubes, which is favorable for bringing into playing the nano size effect of the single-walled carbon nano tube and improving the performances such as efficiency and sensitivity of a fabricated nano device.

Description

technical field [0001] The invention relates to the synthesis technology of nano-cables, and particularly provides a preparation method for in-situ synthesis of amorphous silicon oxide-coated single-walled carbon nano-tube nano-cable structure by arc discharge method. Background technique [0002] With the rapid miniaturization and high integration of electronic devices, research on bottom-up assembly technology and related device units has received great attention. Among them, carbon nanotube-based nanocables have attracted great research by scientists because of their unique structural characteristics, excellent physical and chemical properties, and good practicability, such as good stability, easy manipulation, and the ability to construct field-effect transistors and logic circuits. enthusiasm. [0003] It has been reported that the main preparation method of carbon nanotube-based nanocables is: disperse the carbon nanotubes and immerse them in the shell layer precursor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02C01B33/12H01B7/00
Inventor 刘畅张艳丽王兆钰成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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