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A ZnS monocrystal nanowire growing method

A technology of single crystal nanometer and catalyst, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., to achieve the effect of simple method, uniform shape and easy promotion

Inactive Publication Date: 2009-08-26
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no report on the preparation of ZnS single crystal nanowires by this method.

Method used

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  • A ZnS monocrystal nanowire growing method
  • A ZnS monocrystal nanowire growing method
  • A ZnS monocrystal nanowire growing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Use high-purity ZnS powder (99.5%) as raw material and high-purity Bi powder as catalyst. After the two are uniformly mixed at 1mol:0.015mol, the powder is placed on the molybdenum sheet heater, and the molybdenum sheet is selected as the substrate for evaporation. About 2.0cm above the source, seal the evaporation chamber, when the vacuum reaches 1.4×10 -2 After Pa, the current was gradually increased to 130A at a rate of 3.3A / min and kept for 5 minutes. There are off-white deposits on the substrate surface. The scanning electron microscope image shows that the surface morphology of the substrate deposit is a nanowire with a diameter of 80-100nm and a line length of 10-15μm, such as figure 2 . Its transmission electron microscope picture is as follows image 3 , high-resolution transmission electron microscope pictures such as Figure 4 , it can be seen that it is a single crystal. XRD analysis results show that the main phase of the product is hexagonal ZnS, and...

Embodiment 2

[0026] High-purity ZnS powder (99.5%) is used as raw material, high-purity Bi powder is used as catalyst, the two are evenly mixed according to the ratio of 1mol:0.005mol, and the powder is placed on the molybdenum sheet heater, and the molybdenum sheet is placed on the substrate as the substrate. About 2.0cm above the evaporation source. When the vacuum reaches 2.4×10 -2 After Pa, the evaporation chamber was sealed, and the current was gradually increased to 130 A at a current increase rate of 3.3 A / min and then kept for 10 minutes. There are white deposits on the substrate surface. The surface morphology of the substrate deposit observed by SEM is a single crystal nanowire with a length of 10-20 μm and a diameter of 100-150 nm, such as Figure 5 .

Embodiment 3

[0028] Use high-purity ZnS powder (99.5%) as raw material, high-purity Sn powder as catalyst, and after the two are evenly mixed according to the ratio of 1mol:0.025mol, the powder is placed on the molybdenum sheet heater, and the molybdenum sheet is used as the substrate. About 1.5cm above the evaporation source. When the vacuum reaches 8.0×10 -3 After Pa, the evaporation chamber was sealed, and the current was gradually increased to 130 A at a current increase rate of 3.3 A / min and then kept for 10 minutes. A white deposit was obtained on the molybdenum substrate. The surface morphology of the deposit observed by SEM is uniformly distributed nanowires with a length of 10-20 μm and a diameter of 150-200 nm, such as Image 6 .

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Abstract

The invention discloses a method for catalyst growing monocrystal II-VI group semiconductor compound ZnS nanowire with support of a vacuum thermal evaporation method, which comprises the following steps: evenly mixing ZnS power and metal Bi power or Sn power according to the mol ratio of 1:0.005-1:0.057 as raw materials, placing the mixted raw materials in a resistance heating boat, arranging various substrates at the position of 1.0 cm-3.5 cm above from the boat, closing a vaporizing furnace, when the pressure of the vacuum vaporizing furnace cavity reaches 2x10-7x10 Pa, and the current of the heating boat reaches 120A-140A, the condition is maintained for 5-15 min for sedimentation. The ZnS nanowire prepared by the invention as a monocrystal ZnS with hexagonal phase has advantages of large sedimentation area, uniform appearance, and is applicable for various substrates. The method of the invention is simple, easy to popularize and suitable for large-scale commercial production.

Description

technical field [0001] The invention belongs to the field of nanostructure growth, and relates to a method for growing ZnS single-crystal nanowires by vacuum thermal evaporation under the assistance of a catalyst. Background technique [0002] As an important II-VI direct bandgap semiconductor material, ZnS has a bandgap width of 3.7eV at room temperature. It is an important luminescent material with many luminescent properties such as photoluminescence, electroluminescence, sonoluminescence and so on. Secondly, it has good permeability to a wide band of visible light (0.4μm) to far-infrared light (12μm) and has a large exciton binding energy (40meV) and a small Bohr radius (2.4nm). Based on the above properties, ZnS is widely used in ultraviolet light-emitting diodes, injection lasers, sensors, flat panel displays, infrared window materials, solar cells and other fields. [0003] In recent years, due to the difference in size, shape, and crystal orientation of one-dimensi...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B23/06C30B29/48
Inventor 简基康杨林钰吴荣孙言飞李锦郑毓峰
Owner XINJIANG UNIVERSITY
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