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Semiconductor electronic component and semiconductor device using the same

A technology of electronic components and semiconductors, applied in the direction of semiconductor devices, electrical components, electric solid devices, etc., can solve the problems of inability to wire bond, pollute external electrodes, etc., and achieve the effect of increasing the amount of information

Inactive Publication Date: 2009-09-09
SUMITOMO BAKELITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in this underfill sealing process, the following problems may occur: the sealing resin injected between the semiconductor chips overflows and contaminates the external electrodes provided on the surface of the semiconductor chip in the lower layer, making wire bonding impossible.
[0006] However, even with any of the above-mentioned methods, it is not possible to further increase the density of semiconductor integrated circuits in the stacked chip type SiP.

Method used

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  • Semiconductor electronic component and semiconductor device using the same
  • Semiconductor electronic component and semiconductor device using the same
  • Semiconductor electronic component and semiconductor device using the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0105] First, refer to image 3 , the method of manufacturing the semiconductor electronic component according to the first embodiment of the present invention will be described.

[0106] Such as image 3 As shown in (a), first, the semiconductor chip 10 provided with the internal electrode 11 in the circuit surface and the semiconductor chip 20 provided with the internal electrode 21 in the circuit surface are prepared. In order to improve the electrical connectivity, the surfaces of the internal electrodes 11 and 21 may be preliminarily subjected to treatments such as cleaning, polishing, plating, and surface activation. For example, if image 3 As shown in (a), UBM (under barrier metal buried metal) layers 103 and 104 may be formed on the surfaces of internal electrodes 11 and 21 using Ti, Ti / Cu, Cu, Ni, Cr / Ni, or the like. The UBM layer can be single layer or multilayer. In addition, on the surfaces of the semiconductor chips 10 and 20, in order to protect the semicond...

no. 2 approach

[0196] Next, refer to Figure 4 , a method of manufacturing a semiconductor electronic component according to a second embodiment of the present invention will be described.

[0197] Such as Figure 4 As shown in (a), the semiconductor chip 10 provided with the internal electrodes 11 and the semiconductor chip 20 provided with the internal electrodes 21 are arranged so that the surface (circuit surface) provided with the internal electrodes faces each other.

[0198] The protective film 107 may be formed on the surfaces of the semiconductor chip 10 and the semiconductor chip 20 so that the internal electrodes 11 and 21 are opened, respectively. For example, a protective film of an organic resin such as a polyimide film, a polybenzoxazole film, or a polybenzocyclobutene film can be formed. Thereby, the solder component can be easily guided between the opposing internal electrodes, and the electrical connection between the internal electrodes can be improved. In addition, it ...

Embodiment 1、2

[0265] First, a thermal oxide film 114 with a thickness of 0.4 μm is formed on the entire circuit surface of the semiconductor chip 10 , 20 . Next, Al / 0.5Cu was sputtered to a thickness of 0.4 μm as a metal layer, and wirings other than necessary portions were dry-etched using a resist film to form internal electrodes 11 and 21 . After removing the mask, a SiN film (passivation film) 113 with a thickness of 0.2 μm was formed on the entire surface by CVD, and further, the metal layer portion (internal electrode surface) was soft etched using a resist film. Next, a polyimide layer with a thickness of 3 μm was applied and developed to partially open the metal layer, and then the polyimide layer was cured to form a stress relaxation layer (protective film) 107 . Next, sputtering was performed in the order of 0.05 μm thick Ti and 1 μm thick Cu to form UBM layers 103 and 104 . Thereby, connection pads (pad size: 60 μm square; inter-pad distance: 40 μm; pad pitch: 100 μm) were forme...

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Abstract

The present invention discloses a chip-on-chip type semiconductor electronic component and a semiconductor device which can meet the requirements for further density increase of semiconductor integrated circuits. The present invention provides: a chip-on-chip type semiconductor electronic component in which a circuit surface of a first semiconductor chip and a circuit surface of a second semiconductor chip are opposed to each other, wherein the distance X between the first semiconductor chip and the second semiconductor chip is 50 [mu]m or less, and the shortest distance Y between the side surface of the second semiconductor chip and the first external electrode is 1 mm or less; and a semiconductor device comprising the same.

Description

technical field [0001] The present invention relates to a laminated chip type semiconductor electronic component and a semiconductor device using the same. More specifically, the present invention relates to a semiconductor electronic component capable of responding to demands for higher densification of semiconductor integrated circuits, and a semiconductor device using the same. Background technique [0002] In recent years, the development of high-density packaging technology for semiconductor integrated circuits has been advanced in response to the demand for higher functionality and miniaturization of electronic devices. As one of such mounting techniques, there is a stacked chip type system-in-package (System-In-Package, SIP) in which another semiconductor chip is mounted face-down on a semiconductor chip. This structure is attracting attention because a thinner package can be obtained and the reliability of electrical connection is excellent. [0003] In the stacked...

Claims

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Application Information

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IPC IPC(8): H01L25/065C09J7/00C09J11/06C09J133/00C09J163/00C09J171/10C09J179/08H01L25/07H01L25/18
CPCH01L2924/14H01L2924/0665H01L2224/2919H01L2924/0105H01L2924/014
Inventor 桂山悟山代智绘平野孝
Owner SUMITOMO BAKELITE CO LTD
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