Method for preparing carbon nano tube thin-film field-effect transistor

A carbon nanotube thin film and field effect transistor technology, which is applied in the field of preparation of nanoelectronic device technology, can solve the problems of affecting transistor performance, large size of source and drain electrodes, and inability to effectively and uniformly disperse, etc., to meet the requirements of large-scale production, The effect of good switching performance and good structural stability

Inactive Publication Date: 2009-09-23
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

Its shortcoming is: the carbon nanotubes in the array carbon nanotube film that this method makes piles up together, can't effectively evenly disperse, and this will make carbon nanotubes and source-drain electrode can't form good ohmic contact, carbon nanotubes There is a coupling effect between them, which affects the performance of the transistor
Moreover, the size of the source-drain electrodes used in the fabrication of arrayed carbon nanotube thin film transistors by this method is very large, with a pitch of 0.1-0.5 millimeters and a width of 50-66 millimeters, while the size of transistors in integrated circuits is much smaller than this, so this method cannot Adapt to the increasingly shrinking feature size of the current microelectronics and integrated circuit industry

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In this embodiment, a carbon nanotube thin film field effect transistor is obtained by using an alternating electric field two-dimensional electrophoresis method. The carbon nanotubes were placed in chloroform, and dispersed under ultrasonic waves with a frequency of 30KHz for 2 minutes to form a stable dispersed carbon nanotube suspension.

[0034] On a silicon wafer containing a 500nm-thick silicon dioxide insulating layer, a pattern of parallel and opposite Au electrode pairs is produced by photolithography technology, the electrode spacing is 1 μm, and the width of the pair is 10 μm. A high-frequency sinusoidal AC voltage with a frequency of 5MHz and a field strength of 10V / μm is applied between the source and drain electrodes. A suspension of carbon nanotubes with a concentration of 0.5 μg / ml was placed on the source-drain electrodes to make directional deposition under the action of an alternating electric field, the deposition time was 40 s, and the deposition te...

Embodiment 2

[0037] In this embodiment, a carbon nanotube thin film field effect transistor is obtained by a self-assembly method. Soak the cleaned silicon wafer with insulating layer in H 2 SO 4 and H 2 o 2 In the mixed solution, where H 2 SO 4 and H 2 o 2 The volume ratio range is 3:1, the soaking time is 16 hours, and the soaking temperature is 80 degrees, then soak the rinsed silicon wafer in the APS solution for 10 hours, and the H in the APS solution 2 The volume ratio range of O and APS is 100:1, then soak the dried silicon wafer in the carbon nanotube suspension with a concentration of 10mg / ml for 24h, so that the carbon nanotubes self-assemble on the silicon wafer to form carbon nanotubes film.

[0038] A pair of parallel and opposite Au electrode patterns were fabricated on the silicon wafer by photolithography, the electrode spacing was 1 μm, and the width of the pair was 10 μm.

[0039] The metallic carbon nanotubes were removed by plasma etching with a mixed gas of 75% ...

Embodiment 3

[0041] In this embodiment, a carbon nanotube thin film field effect transistor is obtained by using an alternating electric field two-dimensional electrophoresis method. The carbon nanotubes were placed in chloroform, and dispersed under ultrasonic waves with a frequency of 30KHz for 2 minutes to form a stable dispersed carbon nanotube suspension.

[0042] On a silicon wafer containing a silicon nitride insulating layer with a thickness of 500nm, a pattern of parallel and opposite Au electrode pairs is produced by photolithography technology, the electrode spacing is 1 μm, and the width of the pair is 10 μm. A high-frequency sinusoidal AC voltage with a frequency of 5MHz and a field strength of 10V / μm is applied between the source and drain electrodes. A suspension of carbon nanotubes with a concentration of 0.5 μg / ml was placed on the source-drain electrodes to make directional deposition under the action of an alternating electric field, the deposition time was 40 s, and the...

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Abstract

The invention relates to a method for preparing a carbon nano tube thin-film field-effect transistor of a nano-electrical appliance, comprising the following steps: producing S/D electrode patterns on silicon chips with surface thereof provided with an insulating barrier by adopting the optical lithography; depositing the carbon nano tubes between S/D electrodes to form the carbon nano tube thin-film by dielectrophoresis in an alternative electric field; then using the method of plasma etching to selectively remove metallic carbon nano tubes in the deposited carbon nano tubes to obtain carbon nano tube thin-film field-effect transistor with fine properties; the other method comprises the following steps: depositing the carbon nano tubes on silicon chips with surface thereof provided with an insulating barrier by means of self-assembly to form the carbon nano tube thin-film; then producing S/D electrode patterns on the carbon nano tube thin-film by the optical lithography; finally using the method of plasma etching to selectively remove metallic carbon nano tubes in the deposited carbon nano tubes to obtain carbon nano tube thin-film field-effect transistor with fine properties.

Description

technical field [0001] The invention relates to a preparation method in the technical field of nanoelectronic devices, in particular to a preparation method of a carbon nanotube thin film field effect transistor. Background technique [0002] People have invested a lot of research on carbon nanotube transistors and made some progress. At present, the preparation methods of carbon nanotube field effect transistors mainly include the following: 1. Using microphysical manipulation methods to move carbon nanotubes to electrodes. , such as the method of AFM probe toggling, which can precisely control carbon nanotubes, but the operation is very difficult, the efficiency is very low, and it is difficult to achieve large-scale production; 2. Using CVD to grow carbon nanotubes on the surface of silicon wafers , so that it is connected to the source and drain electrodes. Although this method can control the growth position of carbon nanotubes through the catalyst, the growth direction...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/208H01L21/3065C25D15/00
Inventor 陈长鑫胡林张亚非潘晓艳张伟
Owner SHANGHAI JIAO TONG UNIV
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