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Method for etching matte on surface of single crystal silicon solar energy battery

A solar cell, monocrystalline silicon technology, applied in circuits, electrical components, climate sustainability, etc., can solve the problems of high surface reflectivity of silicon wafers, expensive IPA, large pyramid particles, etc., to achieve uniform distribution and tight arrangement , the effect of reducing reflectivity

Inactive Publication Date: 2009-09-23
SHANXI JINGDU SOLAR ENERGY POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But there are many problems in adopting these texturing solutions: (1) the pyramidal particles obtained on the silicon chip surface after texturing are too large, about 10 μm; (2) IPA is expensive, highly volatile, and has high production costs; (3) ) The reflectivity of the silicon wafer surface is still high after texturing; (4) Although the price of carbonic acid solution is relatively cheap, it is easy to crystallize

Method used

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  • Method for etching matte on surface of single crystal silicon solar energy battery
  • Method for etching matte on surface of single crystal silicon solar energy battery
  • Method for etching matte on surface of single crystal silicon solar energy battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Clean the P-type crystal plane Czochralski single crystal silicon wafer with a resistivity of 1Ωcm by conventional methods, and then put the silicon wafer into a sodium hypochlorite (NaClO) solution with a concentration of 10wt% at a temperature of 85±1°C for etching 25 minutes to remove the silicon surface damage layer. Then put the corroded silicon chip into 80±1°C texturing solution (sodium hypochlorite 5wt%, ethanol 10vl%), react for 5-10 minutes, take out the silicon chip, clean it with deionized water, and dry it.

Embodiment 2

[0024] According to the method of Example 1, the silicon wafer was put into the etching solution to remove the damaged surface layer. The proportion of the etching solution was 15 wt% sodium hypochlorite, the temperature was controlled at 85±1° C., and the reaction time was 30 minutes. The corroded silicon chip is put into the texturing solution composed of 5wt% sodium hypochlorite, 10vl% ethanol and deionized water. The reaction time is 15 minutes, and the temperature is controlled at 80±1°C. Finally, the wafers were rinsed with deionized water and dried. Such as figure 1 As shown, under the scanning electron microscope, it can be seen that a dense pyramid structure is formed on the surface of the silicon wafer, and the size of the pyramid particles is about 1-4 μm, and the distribution is uniform and the coverage rate is high.

Embodiment 3

[0025] Embodiment 3 (comparative example)

[0026] This solution uses a conventional corrosion solution, its components are: sodium hydroxide, ethanol and deionized water, the respective percentages are NaOH2wt%, CH3COOH 10vl%. Clean the P-type crystal plane Czochralski silicon wafer with a resistivity of 1Ωcm by conventional methods, and then put it into a sodium hydroxide (NaOH) solution with a temperature of 85±1°C and a concentration of 15wt% for 10 minutes to remove the surface damage layer. Then put the corroded silicon chip into the prepared etching solution, texture it at 80±1°C for 15 minutes, take out the textured silicon chip, wash it with deionized water, and dry it. Such as figure 2 As shown, under the scanning electron microscope, it can be seen that the pyramid structure formed on the surface of the silicon wafer is relatively large in shape.

[0027] The main technical performance indicators of the texturing reagent of the present invention are shown in Ta...

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Abstract

The invention relates to a method for etching matte on the surface of a single crystal silicon solar energy battery. Sodium hypochlorite solution is adopted for eroding and etching the matte on the surface of the single crystal silicon solar energy battery. The content of the sodium hypochlorite solution is 8-15wt percent, the contents of the sodium hypochlorite and ethanol in the matte manufacturing solution are respectively 5wt percent and v110 percent. The matte on the obtained silicon chip surface is pyramid structure which is characterized in that particles have moderate size and are distributed uniformly. The absorption area of sunlight is increased, and the reflection rate of the surface of the solar energy battery is lowered. With simple process, the method requires no other auxiliary equipment and can be widely applied to the surface treatment of the single crystal silicon solar energy battery.

Description

technical field [0001] The process of the invention relates to a method for etching textured surfaces on the surface of monocrystalline silicon solar cells, which can be widely used in the surface etching treatment of monocrystalline silicon solar cells and belongs to the technical field of chemical etching. Background technique [0002] Due to the limited reserves of traditional fossil energy such as coal and oil, and the serious pollution of the environment during use, the CO emitted globally every year 2 The amount exceeds 50 billion tons, seriously restricting the sustainable development of the world economy. Solar energy has the "infinity" of reserves, inexhaustible and inexhaustible. As a main form of solar energy utilization, solar cells have become a hotspot in the research of renewable energy. Among them, the production technology of monocrystalline silicon solar cells is the most mature, and the conversion efficiency is the highest, but due to its high cost, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23F1/14
CPCY02P70/50
Inventor 唐九耀孙林锋
Owner SHANXI JINGDU SOLAR ENERGY POWER
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