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SAPMAC method for preparing sapphire single-crystal with size above 300mm

A technology of sapphire and pulling method, applied in the direction of self-melt pulling method, single crystal growth, single crystal growth, etc., can solve the problems of high preparation cost and industrial application limitation, and achieve high material utilization rate and obvious social Benefit and economic benefits, the effect of low production costs

Active Publication Date: 2009-11-18
HARBIN AURORA OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sapphire is prepared by the heat exchange method. Although the crystal quality is very high, the preparation cost is extremely high, and the industrial application is limited. The key technology is in the United States.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment one: the specific technological process of this embodiment is as follows:

[0024] (1) Furnace loading: put 69kg of pretreated high-purity alumina raw material (purity>99.996%) into the crucible of the single crystal furnace, and the A-direction seed crystal with a diameter of 20mm after precise orientation is first installed in the seed crystal clamp The seed crystal orientation accuracy is ±0.05°, and then the seed crystal clamp is installed on the lifting rod, the single crystal furnace cover is closed, the cooling water circulation system is started, the cooling water flow is adjusted, and the outlet water temperature is controlled within the range of 25±5°C.

[0025] (2) Chemical material under vacuum condition: start the vacuum system, and wait until the pressure in the furnace reaches 2×10 -4 After Pa, start the heating system, adjust the heating voltage, and heat at a heating rate of 200°C / h. When the temperature reaches 2100°C, stop heating, and all ...

Embodiment 2

[0032] Embodiment two: the specific technological process of this embodiment is as follows:

[0033] (1) Furnace loading: put 66 kg of pretreated high-purity alumina raw material (purity > 99.996%) into the crucible of the single crystal furnace, and the precisely oriented C-oriented seed crystal with a diameter of 16 mm is first installed in the seed crystal holder The seed crystal orientation accuracy is ±0.05°, and then the seed crystal clamp is installed on the lifting rod, the single crystal furnace cover is closed, the cooling water circulation system is started, the cooling water flow is adjusted, and the outlet water temperature is controlled within the range of 25±5°C.

[0034] (2) Chemical material under vacuum condition: start the vacuum system and wait until the pressure in the furnace reaches 5×10 -4After Pa, start the heating system, adjust the heating voltage, and heat at a heating rate of 240°C / h. When the temperature reaches 2100°C, stop heating, and all the r...

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Abstract

The invention provides a SAPMAC method for preparing sapphire single-crystal with size above 300mm. In a 300mm sapphire single-crystal growing furnace, technical processes of charging as well as melting material, seeding, shouldering, isometric growing, pulling out, cooling, annealing and discharging are finished. On the basis of the existing SAPMAC method, the invention is greatly improved, so that the SAPMAC method of the invention has the advantages of larger size of crystal, higher quality, more reasonable size, higher utilization rate of material, lower unit production cost and the like, and can produce sapphire single-crystal with the size above Phi320*260mm, high purity, low defect density and favorable optical performance; in addition, the SAPMAC method of the invention can better satisfy demand of sapphire single-crystal with large size and high quality by national defense and military industry field as well as civil field, and reduces defect occurrence probability by controlling seeding structure; meanwhile, the SAPMAC method of the invention controls crystal shoulder structure, decreases shoulder stress and lowers possibility of crystal cleavage by changing pulling speed and cooling rate.

Description

(1) Technical field [0001] The invention relates to a method for preparing a single crystal, in particular to a method for preparing a sapphire single crystal with a diameter of more than 300 mm by cold shoulder micro-pulling. (2) Background technology [0002] Sapphire single crystal was first proposed as an infrared window material, because of its excellent optical, mechanical, chemical and electrical properties, especially the high transmittance of mid-wave infrared, it has a high wavelength band from 0.190 μm to 5.5 μm. Optical transmittance, so it is widely used as microwave tube dielectric material, ultrasonic transmission element, delay line, waveguide laser cavity and precision instrument bearing, balance knife edge and other optical components, as well as window materials for infrared military devices, space vehicles, and high-intensity lasers . In addition, because sapphire is electrically insulating, transparent, easy to conduct heat, and has high hardness, it ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/20
Inventor 左洪波杨鑫宏宋波王玉平王天成
Owner HARBIN AURORA OPTOELECTRONICS TECH
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