Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for producing polyurethane foam

一种制造方法、氨基甲酸酯的技术，应用在半导体/固态器件制造、制造工具、研磨机床等方向，能够解决流体相聚合物组合物厚度调节、不能制造厚度精度研磨层等问题，达到研磨速度良好的效果

Inactive Publication Date: 2009-12-30
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the method of Patent Document 3, it is difficult to adjust the thickness of the fluid-phase polymer composition supplied to the base layer, and thus it is impossible to manufacture a polishing layer with excellent thickness accuracy.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for producing polyurethane foam
  • Process for producing polyurethane foam
  • Process for producing polyurethane foam

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0092] The following examples are given to illustrate the present invention, but the present invention is not limited to these examples.

[0093] [measurement, evaluation method]

[0094] (Measurement of average cell diameter, evaluation of cell shape)

[0095] The produced abrasive layer was cut in parallel with a razor blade as thin as possible to a thickness of 1 mm or less and used as a sample. The sample was fixed on a glass slide, and observed at 200 times with a SEM (S-3500N, Hitachi Science Systems Co., Ltd.). For the obtained image, the total bubble diameter in an arbitrary range was measured using an image analysis software (WinRoof, Mitani Shoji Co., Ltd.), and the average bubble diameter was calculated. Also, observe the bubble shape.

[0096] (measurement of specific gravity)

[0097] Performed in accordance with JIS Z8807-1976. Cut the manufactured abrasive layer into 4cm×8.5cm strips (thickness: optional) as a sample, and let it stand for 16 hours in an env...

Embodiment 1

[0105] Use a heater to adjust the temperature of the surface material A (thickness 188 μm, width 100 cm) made of PET film and subjected to peeling treatment to 50 ° C and transport it to a fixed flat plate at a transport speed of 1 m / min. The discharge port continuously discharged the urethane composition (temperature at discharge: 62° C.) to the center of the surface material A in the width direction at a discharge rate of 1.2 L / min and a discharge speed of 9 m / min. Then, the surface material B (thickness 188 μm, width 100 cm) made of PET film and subjected to peeling treatment was adjusted to 50° C. with a heater and covered on the composition at a conveying speed of 1 m / min. The thickness of the composition is adjusted uniformly with a thickness adjustment interval of 20 mm and a thickness adjustment time of 1.2 seconds. Thereafter, the composition was cured by passing it through a heating oven at 70° C. installed on a fixed flat plate for 30 minutes to form a polishing she...

Embodiment 2

[0107] A polishing layer was produced in the same manner as in Example 1 except that the face materials A and B made of paper were used instead of the face materials A and B made of a PET film in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
bubble diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

A process for producing a polishing pad that has substantially spherical cells and excels in thickness accuracy. The process for producing a polishing pad comprises the steps of preparing a cell-dispersed urethane composition by a mechanical foaming method; while delivering a face member A (9), continuously discharging the cell-dispersed urethane composition (11) through one spout onto the face member A at its approximately central area in the width direction thereof; superimposing a face member B (14) on the cell-dispersed urethane composition and thereafter uniformly adjusting the thickness of the cell-dispersed urethane composition by theuse of thickness adjusting means (15); without further loading, curing the cell-dispersed urethane composition having its thickness adjusted in the previous step to thereby obtain a polishing sheet consisting of polyurethane foam; and cutting the polishing sheet.

Description

technical field [0001] The invention relates to a grinding pad and a manufacturing method thereof, which can stably and at a high grinding rate meet the requirements of optical materials such as lenses and mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and general metal grinding processes. Planarization of materials with high surface flatness. The polishing pad of the present invention is particularly preferably used in the step of planarizing silicon wafers and devices on which oxide layers, metal layers, etc. are formed, before further lamination and formation of these oxide layers or metal layers. Background technique [0002] When manufacturing a semiconductor device, a process of forming a conductive film on the surface of a wafer and forming a wiring layer by implementing photolithography, etching, etc., and a process of forming an interlayer insulating film on the wiring layer are performed. Concave and convex formed by conductors or i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C08J9/30H01L21/304B24B37/20B24B37/24
CPCC08J9/30C08J2375/04B24B37/24B24D3/32B24D18/00B24D11/00H01L21/304
Inventor 广濑纯司福田武司堂浦真人佐藤彰则中村贤治
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com