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Porous material loaded tio2-x/csurf. complex and its preparation process

A technology of porous material and preparation process, which is applied in catalyst activation/preparation, chemical/physical process, light water/sewage treatment, etc., can solve the problem that there is no effective method for preparing porous materials, restricting industrial production and practical application, and reducing the specific surface area of ​​the carrier. and other problems, to achieve the effect of wide range of composition, low cost and easy control

Inactive Publication Date: 2011-11-30
JISHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

We know that TiO 2 It has photocatalytic activity only after being activated by light, and the penetration ability of ultraviolet light is weak
Therefore, the TiO in the carbon pores 2 is not photocatalytically active; in addition, TiO 2 Deposited in the pores, the specific surface area of ​​the carrier is reduced, which weakens the effect of using loading to increase the specific surface area to enhance the catalytic activity, which affects and restricts its industrial production and practical application
However, it is worth noting that, so far, no porous material (charcoal) has been prepared to support TiO 2 An effective approach to X-composite nanophotocatalytic materials

Method used

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  • Porous material loaded tio2-x/csurf. complex and its preparation process
  • Porous material loaded tio2-x/csurf. complex and its preparation process
  • Porous material loaded tio2-x/csurf. complex and its preparation process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Example 1: First, put 15g of coconut shell activated carbon into the shelf in the supercritical kettle. There is 20ml of isobutanol in the autoclave, and the temperature is raised to 300℃ according to the heating rate of 2℃ / min. After the pressure is 7.1MPa, keep it for 2h; then Cool the supercritical kettle to room temperature to obtain a porous material-low molecular plugging carrier. In addition, using the sol-gel method, mix 60g of butyl titanate with a purity of 99.0%, 3g of diethanolamine and 10g of absolute ethanol, add them into a three-necked flask, and use a GS122 electronic constant speed stirrer to stir evenly. Mix 20 g of absolute ethanol with 4 g of distilled water, and then slowly drop them into the three-necked flask through a separatory funnel. Butyl titanate forms TiO through hydrolysis and condensation reactions 2 Sol. Secondly, put the obtained porous material-low molecular plugging carrier into TiO 2 In the body of the sol, it is coated on the su...

Embodiment 2

[0061] Example 2: First, put 15g of coconut shell activated carbon into the shelf in the supercritical kettle. There is 20ml of isobutanol in the autoclave, and the temperature is raised to 300℃ according to the heating rate of 4℃ / min. After the pressure is 12MPa, keep it for 2h; then put The supercritical kettle is cooled to room temperature to obtain a porous material-low molecular plugging carrier. Using the sol-gel method, mix 60g of butyl titanate with a purity of 99.0%, 3g of diethanolamine, 10g of absolute ethanol and 2g of ferric nitrate, add them into a three-necked bottle, and stir well with a GS122 electronic constant speed stirrer . Mix 20 g of absolute ethanol with 4 g of distilled water, and then slowly drop them into the three-necked flask through a separatory funnel. Butyl titanate forms TiO through hydrolysis and condensation reactions 2 -Fe sol, secondly, put the obtained porous material-low molecular plugging carrier into TiO 2 - In the body of the Fe sol...

Embodiment 3

[0062] Example 3: First, put 15g of coconut shell activated carbon into the shelf in the supercritical kettle. There is 20ml of isobutanol in the autoclave, and the temperature is raised to 180℃ according to the heating rate of 2℃ / min. After the pressure is 15MPa, it is kept for 2h; then the The supercritical kettle is cooled to room temperature to obtain a porous material-low molecular plugging carrier. Using the sol-gel method, mix 60g of butyl titanate with a purity of 99.0%, 3g of diethanolamine and 10g of absolute ethanol, add it into a three-necked flask, and stir evenly with a GS122 electronic constant speed stirrer. Take 20g of absolute ethanol, mix it with 10g of distilled water and 2g of copper nitrate, and then slowly drop it into the three-necked flask through a separatory funnel. Butyl titanate forms TiO through hydrolysis and condensation reactions 2 -Cu sol, and secondly, put the obtained "porous material-low molecular" plugging support into TiO 2In the body o...

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Abstract

The invention relates to a TiO2-X / Csurf. composite body loaded on a porous material and a preparation process thereof. Supercritical fluid precipitation technology and sol-gel method were used to prepare TiO2-X / Csurf. composite nanomaterials with external load structure (X: transition metal; Csurf.: carbon surface). The outstanding features of this method are: the application of supercritical pretreatment and sol-gel method to prepare externally loaded TiO2-X / Csurf. complexes with novel structures and good physical and chemical properties. It provides a new way for the application research of porous materials loaded with doped TiO2 photocatalytic materials. At the same time, the process is simple, easy for industrial production, and makes positive contributions to the development of the research theory, technology and method system of nanomaterials loaded on porous materials.

Description

technical field [0001] The invention relates to loading TiO on a porous material 2 -X / C surf. The composite and its preparation process belong to the field of functional materials. Background technique [0002] TiO 2 Because of its biological and chemical inertness, no photocorrosion and chemical corrosion, and low price, it has been proved to be the most widely used photocatalyst. Due to TiO 2 The electron distribution of is characterized by the presence of a band gap between its conduction and valence bands. When illuminated, as long as the energy of the photon is equal to or exceeds the band gap energy of the semiconductor (hv≥E g ), the electrons can transition from the valence band to the conduction band, thereby generating conduction band electrons and valence band holes. Under the action of the electric field of the space charge layer, the free electrons in the conduction band quickly migrate to the surface of the semiconductor particles and transfer to the oxid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J35/10B01J21/06B01J23/745B01J23/50B01J23/34B01J23/72B01J23/26B01J37/00C02F1/30
Inventor 李佑稷胡文勇
Owner JISHOU UNIVERSITY