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Method for depositing copper sulphide nano film rapidly in low temperature

A nano-film and copper sulfide technology, applied in copper sulfide, liquid chemical plating, metal material coating process, etc., can solve the problems that affect the application of CuS film, unfavorable industrial production, long preparation time, etc., and shorten the film deposition time , uniform heating, lower deposition temperature

Inactive Publication Date: 2010-02-03
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, I.Puspitasari et al. and K.D.Yuan et al. have successfully prepared CuS thin films by chemical bath method. However, the preparation time is relatively long and the efficiency is low, which is not conducive to industrial production, which will affect the further application of CuS thin films.

Method used

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  • Method for depositing copper sulphide nano film rapidly in low temperature
  • Method for depositing copper sulphide nano film rapidly in low temperature
  • Method for depositing copper sulphide nano film rapidly in low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] a) Substrate pretreatment: The transparent conductive glass substrate (FTO glass) is fully cleaned in an ultrasonic cleaner with toluene, acetone and ethanol in sequence, rinsed with deionized water, soaked in ethanol and stored for later use.

[0025] b) 0.1mol / L of Cu(Ac) 2 The analytically pure powder was dissolved in 10ml of deionized water, fully stirred in a 100ml beaker with a magnetic stirrer, and then 10ml of 0.1mol / L disodium ethylenediaminetetraacetic acid (EDTA-2Na) solution was added to clear Cu(Ac ) 2 In the solution, the solution was continuously stirred to obtain a completely clear and transparent blue solution A.

[0026] c) Add NaOH solution with a concentration of 6 mol / L to solution A, adjust the pH value to 10, and obtain solution B.

[0027] d) Slowly add 10 ml of 0.1 mol / L thioacetamide solution to solution B, add deionized water to 80 ml, and stir evenly to obtain clear and transparent solution C.

[0028] e) Dry the pretreated substrate with ...

Embodiment 2

[0031] a) Substrate pretreatment: The transparent conductive glass substrate (FTO glass) is fully cleaned in an ultrasonic cleaner with toluene, acetone and ethanol in sequence, rinsed with deionized water, soaked in ethanol and stored for later use.

[0032] b) A certain amount of 0.1mol / L Cu(Ac) 2 The analytically pure powder was dissolved in 10ml of deionized water, fully stirred in a 100ml beaker with a magnetic stirrer, and then 10ml of 0.1mol / L disodium ethylenediaminetetraacetic acid (EDTA-2Na) solution was added to clear Cu(Ac ) 2 In the solution, the solution was continuously stirred to obtain a completely clear and transparent blue solution A.

[0033] c) Add NaOH solution with a concentration of 6 mol / L to solution A, adjust the pH value to 8, and obtain solution B.

[0034] d) Slowly add 10 ml of 0.1 mol / L thioacetamide solution to solution B, add deionized water to 80 ml, and stir evenly to obtain clear and transparent solution C.

[0035] e) Dry the pretreated...

Embodiment 3

[0038] a) Substrate pretreatment: The transparent conductive glass substrate (FTO glass) is fully cleaned in an ultrasonic cleaner with toluene, acetone and ethanol in sequence, rinsed with deionized water, soaked in ethanol and stored for later use.

[0039] b) A certain amount of 0.1mol / L Cu(Ac) 2The analytically pure powder was dissolved in 10ml of deionized water, fully stirred in a 100ml beaker with a magnetic stirrer, and then 10ml of 0.1mol / L disodium ethylenediaminetetraacetic acid (EDTA-2Na) solution was added to clear Cu(Ac ) 2 In the solution, the solution was continuously stirred to obtain a completely clear and transparent blue solution A.

[0040] c) Adding HCl solution with a concentration of 3 mol / L to Solution A to adjust the pH value to 6 to obtain Solution B.

[0041] d) Slowly add 10 ml of 0.1 mol / L thioacetamide solution to solution B, add deionized water to 80 ml, and stir evenly to obtain clear and transparent solution C.

[0042] e) Dry the pretreate...

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Abstract

The invention relates to a method for depositing copper sulphide nano film rapidly in low temperature, belonging to the technical field of the preparation of functional film materials. The preparationmethod of copper sulphide film in the prior art has high requirement on the deposition conditions, needs high temperature heating, has great limitations for the deposition of substrate, and has longer preparation time and low efficiency, thus being not benefical to the industrial production. In the preparation method of copper sulphide nano film of the invention, the ethylene diamine tetraaceticacid disodium (EDTA-2Na) is used as complexing agent, nano copper sulphide film with an indigo copper ore structure can be obtained on semiconductor substrate and conducting substrate within 40 minutes and in the microwave water-bath environment at the temperature of lower than 100 DEG C, and the crystal particles of the nano copper sulphide film are tiny, uniform, compact and have specific microstructure. The invention has simple technology and low cost, and is suitable for large-scale production and application.

Description

technical field [0001] The invention relates to a method for rapidly depositing a copper sulfide nano film at a low temperature. In a relatively low temperature range, ethylenediaminetetraacetic acid disodium (EDTA-2Na) is used as a complexing agent, and can be deposited in a relatively short period of time. Nanoscale copper sulfide films. The invention belongs to the technical field of preparation of functional thin film materials. Background technique [0002] Cu x S(x=1-2) is an important photoelectric functional material. In 1976, D.F.A.Koch, R.J.McIntyre reported Cu x There are at least five stable compounds of S at room temperature: CuS, Cu 1.75 S, Cu 1.8 S, Cu 1.95 S, Cu 2 S. For a long time to come, they are widely used in optical and electrical devices, such as photothermal conversion devices, electrically conductive electrodes, microwave protective coatings, solar control coatings, dye-sensitized solar cells, nanoswitches, lithium-ion Battery anode materia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/14C01G3/12
Inventor 汪浩忻睦迪李坤威严辉
Owner BEIJING UNIV OF TECH
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