Amorphous lanthanum-lutetium oxide resisting film and preparation method and application thereof

An oxide film and resistive film technology, applied in the field of microelectronic materials, can solve problems such as unsatisfactory speed and poor reliability.

Inactive Publication Date: 2010-02-17
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the shrinking of the size of computers and other equipment and the improvement of functions, the traditional magnetic memory has faced major challenges due to the shortcomings of volume, recording density and operation mode, and the storage speed of Flash electronic storage technology is better than that of magnetic media storage, but its in Poor reliability in harsh environments and less than ideal speed

Method used

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  • Amorphous lanthanum-lutetium oxide resisting film and preparation method and application thereof
  • Amorphous lanthanum-lutetium oxide resisting film and preparation method and application thereof
  • Amorphous lanthanum-lutetium oxide resisting film and preparation method and application thereof

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Effect test

Embodiment 1

[0021] A method for preparing an amorphous lanthanum-lutetium oxide resistive thin film, the preparation steps of which are as follows:

[0022] a) The lanthanum-lutetium oxide ceramic target 4 is made of La 2 o 3 and Lu 2 o 3 prepared by powder mixing solid phase sintering; 2 o 3 and Lu 2 o 3 After the powders are evenly mixed according to the molar ratio of 1:1, ball milling for 12 hours, pre-sintering at 1200°C, sintering at 1500°C for 15 hours after grinding, and making lanthanum-lutetium oxide ceramic target 4 after cooling;

[0023] b) Fixing the lanthanum-lutetium oxide ceramic target 4 in a pulsed laser deposition film-making system (such as figure 1 shown), the substrate 1 is fixed on the substrate table 8, and they are all placed in the growth chamber 6 of the pulsed laser deposition film-making system;

[0024] c) Use a vacuum pump to evacuate the growth chamber 6 to about 2.0×10 through the interface valve 7 of the mechanical pump and the molecular pump. ...

Embodiment 2

[0029] A method for preparing a non-volatile resistive memory element using an amorphous lanthanum-lutetium oxide thin film, the specific preparation steps are as follows:

[0030] 1) A substrate with a Pt12 / Ti11 / SiO210 / Si(111)9 structure is placed in a pulsed laser deposition chamber, and an amorphous lanthanum-lutetium oxide thin film 13 is deposited using a pulsed laser deposition technique.

[0031] 2) Deposit the point electrode 16 on the above-mentioned boss by using the magnetron sputtering method of the metal mask, and its material is Pt, and the thickness is 100 nanometers;

[0032]3) Finally, connect the lead wires 14 and 15 from the electrode film 12 and the point electrode 16 respectively.

Embodiment 3

[0034] A method for preparing an amorphous lanthanum-lutetium oxide resistive thin film material, the preparation steps are: preparing a lanthanum-lutetium oxide ceramic target (4): adding La 2 o 3 and 60% Lu 2 o 3 After the powders are evenly mixed, ball mill for 12 hours, then pre-sinter at 1200°C, grind again and sinter at 1500°C for 12 hours to make the lanthanum lutetium oxide ceramic target 4; fix the lanthanum lutetium oxide ceramic target 4 in the pulse In the growth chamber 6 of the laser deposition film making system device, the growth chamber 6 is evacuated to 5.0×10 with a vacuum pump. -4 Below Pa; use an electric furnace wire to heat the substrate table 8 to 300°C. The substrate (1) is made of Pt / Ti / SiO 2 / Si(111); start the laser 2, make the laser beam focus on the lanthanum-lutetium oxide ceramic target material 4 through the focusing lens 3, and deposit a thick amorphous lanthanum-lutetium oxide film with a thickness of 30 nm on the substrate 1, at room temp...

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Abstract

The invention relates to a method for preparing amorphous lanthanum-lutetium oxide resisting film material. The preparation of lanthanum-lutetium oxide ceramic target material comprises the followingsteps: uniformly mixing La2O3 powder and Lu2O3 powder together, wherein the La2O3 powder accounts for 40-60% of the total molar weight of the mixed powder and the Lu2O3 powder accounts for40-60% of the total molar weight of the mixed powder; carrying out the milling of the mixture for 12-15 hours, presintering the mixture at 1200 DEG C-1400 DEG C, milling the mixture again, and then, sintering themixture for 12-18 hours at 1500 DEG C-1800 DEG C to obtain the lanthanum-lutetium oxide ceramic target material; fixing the lanthanum-lutetium oxide ceramic target material in a growth room of a system for preparing films by pulse laser deposition, and using a vacuum pump to pump the growth room into a vacuum state below 5.0*10<-4>Pa; using electric stove wires to heat a substrate table to 300-500 DEG C; and starting a laser device to focus laser beams on the lanthanum-lutetium oxide ceramic target material through a focusing lens, and depositing an amorphous lanthanum-lutetium oxide film ona substrate, wherein the thickness of amorphous lanthanum-lutetium oxide film is 30nm-500nm.

Description

technical field [0001] The invention belongs to the field of microelectronic materials, and in particular relates to an amorphous lanthanum-lutetium oxide thin film used in the preparation of fast-readable high-density non-volatile unipolar resistive memory elements, and a preparation method and application thereof. Background technique [0002] Non-volatile memory is widely used for data storage in electronic systems, such as computers, digital equipment, industrial control equipment, etc. With the shrinking of the size of computers and other equipment and the improvement of functions, the traditional magnetic memory has faced major challenges due to the shortcomings of volume, recording density and operation mode, and the storage speed of Flash electronic storage technology is better than that of magnetic media storage, but its in The reliability is poor in harsh environments, and the speed is not ideal. In recent years, the development of a new type of non-volatile memor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/28C23C14/08H01L45/00
Inventor 李魁夏奕东国洪轩高旭殷江刘治国
Owner NANJING UNIV
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