Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Poly (ether ether ketone) film lapping-high temperature sintering insulating conductor and manufacturing process thereof

A polyetheretherketone film, insulated conductor technology, applied in the direction of insulated conductors, plastic/resin/wax insulators, conductors, etc., can solve the problems of poor conductor flexibility, inability to achieve large wire diameter conductor insulation, self-heavy and other problems, and achieve consistent Good performance, accurate speed and pitch, uniform fit effect

Inactive Publication Date: 2010-03-10
NUCLEAR POWER INSTITUTE OF CHINA
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a kind of "high temperature resistant and high temperature water vapor insulated wire and its production method" announced by Chinese patent CN1499537A is to produce insulated conductors through the extrusion insulation coating process of special engineering plastics PEEK, but this process is only suitable for small diameter PEEK For the production of insulated conductors, for conductors with large wire diameters, such as conductors with a size between 6 and 40mm, due to the poor flexibility of the conductors and their heavy weight, it is impossible to use the existing extrusion molding production line and the interface mold. Realize the insulation of large diameter conductors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Poly (ether ether ketone) film lapping-high temperature sintering insulating conductor and manufacturing process thereof
  • Poly (ether ether ketone) film lapping-high temperature sintering insulating conductor and manufacturing process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] A specific embodiment of a polyether ether ketone film wrapping-high temperature sintered insulated conductor and its production process of the present invention will be introduced below in conjunction with the accompanying drawings:

[0031] as attached figure 1 As shown, a polyether ether ketone film wrapping-high temperature sintered insulated conductor is composed of an inner conductor 1 and an insulating layer 2 closely attached to the inner conductor 1; wherein the inner conductor 1 is composed of copper, and its diameter is 0.8-40mm , the copper material here is pure copper or oxygen-free copper; the material of the insulating layer 2 is polyetheretherketone (PEEK), and its thickness is 0.05-0.8 mm. ;

[0032] Such as figure 2 As shown, a polyether ether ketone film wrapping-high temperature sintered insulated conductor production process, the main steps include:

[0033] (1) Straighten the inner conductor

[0034] Straighten the inner conductor, the straigh...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of insulating conductors, in particular to a poly (ether ether ketone) film lapping-high temperature sintering insulating conductor and a manufacturing process thereof, which aim to solve the problem that the prior insulating conductor has reduced insulativity after working for a long time under a nuclear environment. The conductor consists of an inner conductor(1) and an insulating layer (2) closely attached to the inner conductor (1), wherein the diameter of the inner conductor (1) is between 0.8 and 40mm; and the thickness range of the insulating layer (2) of the insulating conductor is between 0.05 and 0.8mm. The invention also provides a process for manufacturing the conductor, which comprises five steps of aligning the inner conductor, processing the surface of the inner conductor, coating a film, fusing the film and cooling. The insulating conductor and the process have the advantages of high temperature resistance, radiation resistance, hightemperature hydrolyzation resistance, good consistency of the insulating layer material, no toxic substance generation in a sintering process, simple process, and suitability for all kinds of manufacturing, and for insulating layer manufacturing of full wire diameter conductors.

Description

technical field [0001] The invention belongs to the field of insulated conductors, and in particular relates to a polyether ether ketone film wrapping-high-temperature sintered insulated conductor and a production process thereof. Background technique [0002] Wrapped wire is a common way to achieve high-performance insulated wires. It uses natural silk, polyester filament, glass filament, insulating paper or synthetic resin film to tightly wrap the conductive core to form an insulating layer. Wrapped wire is actually a combined insulation method, with high electrical performance, and can better withstand overvoltage and overload load, especially film wrapped wire, which has higher mechanical and electrical properties, and is mostly used in large and medium-sized motors. works well. [0003] At present, the high-performance film wrapping wire is mainly polyimide-fluorine 46 composite film wrapping wire, and its insulation coating process is film wrapping-high temperature si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B7/00H01B3/30H01B13/00H01B13/06
Inventor 罗志远王广金周天郑兰疆
Owner NUCLEAR POWER INSTITUTE OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products