Photoresist cleaning agent

Abstract

The invention discloses a photoresist cleaning agent containing quaternary ammonium hydroxide, water, alkyl diol ether, dimethyl sulfoxide and polyacrylic inhibiter, wherein the number of carbon atomof alkyl diol in the alkyl diol ether is 3-18. The photoresist cleaning agent can remove photoresist (in particular to thick-film negative photoresist) on base materials such as metal, metal alloy ordielectric and the like and other corrosion residues, has extremely weak corrosivity to metal such as aluminium, copper and the like and non-metallic material such as silicon dioxide and the like, andhas favourable application prospect in the field of microelectronics, such as semiconductor chip cleaning and the like.

Description

technical field [0001] The invention relates to a cleaning agent in a semiconductor manufacturing process, in particular to a photoresist cleaning agent. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist coating is first formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and then exposed and developed using an appropriate mask. According to the photoresist used To remove the exposed or unexposed part of the photoresist, form a photoresist pattern at the required position, and then perform plasma etching or reactive gas etching on the photoresist pattern to perform pattern transfer. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. Negative photoresists with a thickness of more than 20 μm are gradually being used in the semiconductor wafer manufacturing process. At present, most photoresist cleaners in the ind...

AI Technical Summary

Problems solved by technology

Negative photoresists with a thickness of more than 20 μm are gradually being used in the semiconductor wafer manufacturing process. At present, most photoresist cleaners in the industry have a good cleaning ability for positive photoresists, but they cannot completely remove the old photoresist on the wafer. Negative photoresist with cross-linked network structure after exposure and etching

[0014] In summary, the existing industrial photoresist cleaners still cannot completely remove the photoresist and other residues on the wafer, especially the negative photoresist with cross-linked network structure after exposure and etching. defects, and corrosion problems to semiconductor wafer patterns and substrates

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