Method for preparing P type cobalt-doped zinc oxide film
A zinc oxide film and ceramic target technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of not mentioning that the film exhibits P-type semiconductor characteristics, etc., to achieve smooth surface and crystal quality. Good results
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[0018] Example 1
[0019] 1) Preparation of Zn 0.9 Co 0.1 O ceramic target:
[0020] Combine 14.2621g of ZnO with a purity of 99.99% and 1.5297g of Co with a purity of 99.99% 2 O 3 (The molar ratio is 0.9:0.05) After grinding for 3 hours in the agate grinder, place it in the corundum sintering container and raise the temperature to 1200℃ within 5 hours and keep it for 6 hours, cool to room temperature, and grind in the agate grinder again for 4 hours Afterwards, it was pressed into a solid circular target with a diameter of 30mm by a hydraulic target press (pressing at 12MPa for 3 minutes), and the solid circular target was placed in a tube furnace at 1200°C for 11 hours to obtain a purity of 99.99% Zn 0.9 Co 0.1 O ceramic target;
[0021] 2) Preparation of P-type cobalt-doped zinc oxide film:
[0022] Take the Zn prepared in step 1) 0.9 Co 0.1 O ceramic as target material, with Al 2 O 3 Single crystal is the substrate, P-type cobalt-doped zinc oxide film is prepared by pulse deposit...
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[0023] Example 2
[0024] 1) Same as step 1) in Example 1;
[0025] 2) Except for vacuuming the vacuum chamber to 1.1×10 -4 Pa and heating the substrate to 700°C, and other operations are the same as step 2) in Example 1.
[0026]
[0027] Table 1 Zn prepared in Example 1-2 0.9 Co 0.1 Hall effect test result of O film.
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