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Method for preparing P type cobalt-doped zinc oxide film

A zinc oxide film and ceramic target technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of not mentioning that the film exhibits P-type semiconductor characteristics, etc., to achieve smooth surface and crystal quality. Good results

Inactive Publication Date: 2010-04-28
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

None of the above-mentioned studies mentioned that the obtained thin film exhibits P-type semiconductor characteristics.

Method used

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  • Method for preparing P type cobalt-doped zinc oxide film
  • Method for preparing P type cobalt-doped zinc oxide film
  • Method for preparing P type cobalt-doped zinc oxide film

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0019] 1) Preparation of Zn 0.9 co 0.1 O ceramic target:

[0020] 14.2621g of ZnO with a purity of 99.99% and 1.5297g of Co with a purity of 99.99% 2 o 3 (The molar ratio is 0.9:0.05) Put it into the agate grinder and grind for 3 hours, place it in a corundum sintering container, heat up to 1200°C within 5 hours and keep it warm for 6 hours, cool to room temperature, and grind it again in the agate grinder for 4 hours Finally, it is pressed into a solid circular target with a diameter of 30mm by a hydraulic target press (pressed at 12MPa for 3 minutes), and the solid circular target is placed in a tube furnace and kept at 1200°C for 11 hours to obtain a purity of 99.99%. Zn 0.9 co 0.1 O ceramic target;

[0021] 2) Preparation of P-type cobalt-doped zinc oxide film:

[0022] With the Zn prepared in step 1) 0.9 co 0.1 O ceramics as target material, with Al 2 o 3 The single crystal is used as the substrate, and the P-type cobalt-doped zinc oxide thin film is prepared b...

Embodiment 2

[0024] 1) with step 1) among the embodiment 1;

[0025] 2) In addition to vacuuming the vacuum chamber to 1.1×10 -4 Pa and heating the substrate to 700° C., other operations are the same as step 2) in Example 1.

[0026]

[0027] The Zn that table 1 embodiment 1-2 prepares 0.9 co 0.1 Hall effect detection results of O thin films.

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Abstract

The invention relates to a method for preparing a P type cobalt-doped zinc oxide film. By taking ZnO and Co2O3 as raw materials, the invention obtains a Zn0.9Co0.1O ceramic target material through grinding, mixing, sintering, grinding, pressing and sintering; then, a Pulse Laser Deposition (PLD) method is adopted to prepare the P type cobalt-doped zinc oxide film by the Zn0.9Co0.1O ceramic target material. The invention has simple and easy operation and high repetition rate, and the prepared diluted magnetism semiconductor film has good crystallization quality and smooth surface; and above all, an n type eigen ZnO is successfully transformed into a P type doped ZnO group diluted magnetism semiconductor material; and a favorable precondition is created for the application of preparing a ZnO group homogeneous P-N junction with a diluted magnetism property in the next step.

Description

technical field [0001] The invention relates to a method for preparing a P-type cobalt-doped zinc oxide film. Background technique [0002] Using the charge and spin properties of electrons, semiconductor devices for information processing and magnetic materials for information storage can be fabricated respectively. To make devices with both information processing and information storage functions, the first condition is to obtain semiconductor materials with room temperature ferromagnetism. ZnO-based dilute magnetic semiconductor is one of the research hotspots of ferromagnetic semiconductor materials at room temperature, and intrinsic ZnO is mostly n-type, with a carrier concentration as high as 10 19 cm -3 , but effective P-type doping cannot be carried out, so the basic p-n junction in semiconductor and optoelectronic devices cannot be realized. It is an urgent problem to be solved to prepare a semiconductor material that is both P-type and room temperature ferromagn...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/06
Inventor 王丽苏雪琼陈江博万晓婧
Owner BEIJING UNIV OF TECH
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