Method for preparing nano-crystalline BST film

A nanocrystalline and thin film technology, applied in the field of preparation of nanocrystalline barium strontium titanate thin film, can solve the problems of expensive equipment, serious film cracks, poor compactness, etc., achieve stable frequency characteristics and temperature characteristics, and improve comprehensive dielectric tuning performance , The effect of reducing manufacturing costs

Inactive Publication Date: 2010-05-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the equipment of the first three is relatively expensive, and the deposition rate of radio frequency magnetron sputtering is slow, the composition of the film and the target material are very different, the uniformity of the pulsed laser deposited film is poor, and the metal organic chemical vapor deposition metal organic source is difficult

Method used

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  • Method for preparing nano-crystalline BST film
  • Method for preparing nano-crystalline BST film
  • Method for preparing nano-crystalline BST film

Examples

Experimental program
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Effect test

Embodiment 2

[0042] Example 2: Si / SiO 2 / Ti / Pt substrate to prepare layer-by-layer precrystallized BST thin film, the preparation steps are as follows:

[0043] Step 1: Prepare BST sol, which specifically includes the following steps:

[0044] Step 1-1: Dissolving inorganic barium salt and inorganic strontium salt soluble in glacial acetic acid with a molar ratio of Ba:Sr=x:(1-x) in glacial acetic acid, stirring at 60-80°C for 60 ~120 minutes to form a barium strontium precursor where x = 0.6.

[0045] Step 1-2: Mix butyl titanate and acetylacetone with a molar ratio of 1:2, heat and stir for 60-120 minutes to form a titanium precursor solution.

[0046] Step 1-3: Mix the barium-strontium precursor solution obtained in step 1-1 with the titanium precursor solution obtained in step 1-2, wherein the sum of the molar amounts of Ba and Sr in the barium-strontium precursor solution is equal to the molar amount of Ti in the titanium precursor solution ratio of 1:1 to 1.2; then dropwise add po...

Embodiment 4

[0055] Example 4: Si / SiO 2 Layer-by-layer pre-crystallized BST films with different crystallization temperatures were prepared on the / Ti / Pt substrate, and the preparation steps were as follows:

[0056] Step 1: Prepare BST sol, which specifically includes the following steps:

[0057] Step 1-1: Dissolving inorganic barium salt and inorganic strontium salt soluble in glacial acetic acid with a molar ratio of Ba:Sr=x:(1-x) in glacial acetic acid, stirring at 60-80°C for 60 ~120 minutes to form a barium strontium precursor where x = 0.6.

[0058] Step 1-2: Mix butyl titanate and acetylacetone with a molar ratio of 1:2, heat and stir for 60-120 minutes to form a titanium precursor solution.

[0059] Step 1-3: Mix the barium strontium precursor solution obtained in step 1-1 with the titanium precursor solution obtained in step 1-2, wherein the sum of the molar amounts of Ba and Sr in the barium strontium precursor solution is equal to the molar amount of Ti in the titanium precu...

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Abstract

The invention discloses a method for preparing a nano-crystalline barium-strontium titanate film, belongs to the technical field of functional materials, and relates to a method for preparing a nano-crystalline BST film. A pre-crystallization treatment step is added between cooling step and crystallization step of the conventional sol-gel method for preparing the BST film. The nano-crystalline BST film can be grown internally and externally under atmospheric environment, and the obtained film is smooth and compact, and has no crack or shrinkage hole. The method can greatly improve the comprehensive dielectric tuning performance of the nano-crystalline BST film, the capacitance of the obtained nano-crystalline BST film is 58 to 1,840pF, the dielectric tuning rate is over 20.0 percent, the dielectric loss is less than 3.0 percent, the K factor is more than 15.0, and the nano-crystalline BST film has the advantages of high dielectric strength and stable frequency characteristic and temperature characteristic. The nano-crystalline BST film prepared by the method can replace ferrite and semiconductors for preparing a microwave tuning device (such as a phase shifter) so as to remarkably reduce the manufacturing cost of the microwave tuning device; in addition, the nano-crystalline BST film prepared by the method can also be used for magnetic recording, pyroelectric focal plane array and the like.

Description

technical field [0001] The invention belongs to the technical field of functional materials, and relates to a preparation method of a nanocrystalline barium strontium titanate (BST) thin film. Background technique [0002] As a core microwave device, the phase shifter has always been the focus of research and development. A phase shifter with fast phase shifting speed, high phase shifting accuracy, low insertion loss, large power capacity, small size, light weight, low cost, and high reliability has become the goal of pursuit, and it is required to be "miniaturized, lightweight, functional It is developed in the direction of "integration and integration", and has comprehensive dielectric tuning properties such as high tuning rate, low loss, and high stability. Ferrite phase shifters have slow response speed, large size, heavy weight, and high cost, while semiconductor diode phase shifters have small capacity and high high-frequency insertion loss, which are becoming more an...

Claims

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Application Information

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IPC IPC(8): C04B35/622C04B35/468C04B35/47
Inventor 廖家轩贾宇明魏雄邦田忠傅向军张佳
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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