Ultra-high sensitive magneto-resistance film material and preparation method thereof

A technology of thin film materials and magnetoresistance, which is applied in the fields of magnetic field controlled resistors, the application of magnetic films to substrates, and the coating process of metal materials. Index and other issues, to achieve the effect of obvious magnetic field sensitivity, convenient production, and improved spin electron scattering path

Active Publication Date: 2010-05-19
北京麦格纳材科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, the shunting effect of the seed layer and the protective layer is also more obvious. At this time, it is difficult for the thin film material to maintain a good magnetoresistance change rate (ΔR/R) and magnetic field sensitivity (S v )
In order to ensure that the ultra-thin NiFe film has a larger magnetoresistance change rate and higher magnetic field sensitivity to meet the needs of magnetic sensors, etc., in the literature W.Y.Lee, M.Toney, P.Tameerug, E.Allen and D. Mauri, J.Appl.Phys.87, 6992 (2000) proposed to use (Ni 0.81 Fe 0.19 ) 1-x Cr x or Ni 1-x Cr x Ni prepared as a seed layer 0.81 Fe 0.19 film, its AMR value is higher than that of Ni with Ta as the seed layer 0.81 Fe 0.19 The AMR value of the film has been significantly improved. For example, the AMR value of the 12nm thick NiFe film has reached 3.2%.
In the literature H.Funaki, S.Okamoto, O.Kitakami, and Y.Shimada, Jpn.J.Appl.Phys., Part 233, L1304 (1994), it is proposed that the use of annealing can significantly improve the ΔR/ R value, such as 20nm thick Permalloy thin film, after annealing at 400°C, the ΔR/R value can reach 3.5%, but t

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  • Ultra-high sensitive magneto-resistance film material and preparation method thereof

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Embodiment 1

[0018] Magnetic thin films were prepared in a magnetron sputtering apparatus. Firstly, the glass substrate is ultrasonically cleaned with organic chemical solvent and deionized water, and then placed on the sample base of the sputtering chamber. The substrate is cooled with circulating water, and a magnetic field of 150 Oe is applied parallel to the direction of the substrate. Sputtering chamber background vacuum 3×10 -5 Pa, Ta ( ) / MgO( ) / Ni 81 Fe 19 ( ) / MgO( ) / Ta( ). Then the thin film material is subjected to vacuum magnetic field heat treatment, and the background vacuum degree of the annealing furnace is 8×10 -5 Pa, the annealing temperature is 400°C, the annealing time is 0.5 hour, and the annealing field is 800Oe, and the film is prepared.

[0019] figure 1 It is the magnetoresistance output curve of the film material measured by the conventional four-probe method, and its magnetic field sensitivity is up to 2.0% Oe, which is better than that of literatur...

Embodiment 2

[0021] Magnetic thin films were prepared in a magnetron sputtering apparatus. Firstly, the single crystal Si(001) substrate is ultrasonically cleaned with organic chemical solvent and deionized water, and then placed on the sample base of the sputtering chamber. The substrate is cooled with circulating water, and a magnetic field of 250 Oe is applied parallel to the direction of the substrate. Sputtering chamber background vacuum 4×10 -5Pa, NiFeCr ( ) / (MgO ) / Ni 80 Fe 20 ( ) / (MgO ) / Au( ). Then the thin film material is subjected to vacuum magnetic field heat treatment, and the background vacuum degree of the annealing furnace is 4×10 -5 Pa, the annealing temperature is 500°C, the annealing time is 2 hours, and the annealing field is 900Oe, and the film is prepared. The magnetoresistance output curve of the thin film material measured by the conventional four-probe method shows that the maximum magnetic field sensitivity is 2.3% / Oe. Then, the thin film material i...

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Abstract

The invention discloses an ultra-high sensitive magneto-resistance film material and a preparation method thereof, and relates to magnetic film material. The film material has the structure of a buffer layer/MgO /NiFe /MgO/ protection layer; and then, high temperature annealing is carried out in magnetic field. The material with the structure has high magnetic field sensitivity, and a magnetic sensing element processed by the material also has high magnetic field sensitivity. The method mainly has the advantages that the material has simple structure and design, and obviously improves the magnetic field sensitivity which is basically equivalent to the magnetic field sensitivity of tunnel magneto-resistance (TMR) film materials and corresponding elements; meanwhile, in the original material system technique, when the NiFe layer is thinner, the phenomenon of 'magnetic dead layer' caused by solid phase reaction at the film interface of material or a device which is processed at certain temperature can be overcome; therefore, the material can be used for making a high sensitive magneto-resistance sensing component.

Description

technical field [0001] The invention relates to a magnetic thin film material, in particular to a highly sensitive magnetoresistance thin film material and a preparation method thereof. Background technique [0002] Anisotropic magnetoresistance (AMR) permalloy thin film material (NiFe) can be used to make application devices such as computer hard disk read head, magnetic random access memory and various magnetic sensors, and is widely used in automation technology, household appliances, navigation systems, mobile In the fields of communications, large-capacity storage and computers, especially in geomagnetic measurements, AMR thin film materials have better direction sensitivity than giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) thin film materials, and anisotropic magnetic Resistivity has a quantitative relationship with angle: ρ(θ)=ρ ⊥ +Δρcos 2 θ, so this material has broad application prospects in geomagnetic navigation and other fields. In addition...

Claims

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Application Information

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IPC IPC(8): H01F10/08H01F10/14H01F41/18H01L43/12H01L43/08C23C14/24
CPCH01L43/08H01L43/12G01R33/093H01F10/30B82Y25/00H01F10/14H10N50/01H10N50/10
Inventor 于广华丁雷滕蛟李明华冯春
Owner 北京麦格纳材科技有限公司
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