Optical receiving assembly for hundred trillion-grade 850nm optical communication and preparation method thereof
A technology for optical receiving components and optical communication, which is applied in the coupling of optical waveguides, semiconductor/solid-state device manufacturing, electrical components, etc. performance, reduced packaging costs, and the effect of reducing system components
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[0028] see figure 1 and 2 , the 850nm photoelectric single-chip integrated receiving chip 1 is pasted on the tube base 2, the pad of the chip is connected to the pin 3 with 4 gold wires 4 by bonding machine, and the tube cap 5 is covered by a capping machine. After completion, it is coaxially packaged with the light-receiving component adapter 6 by laser welding to form a light-receiving component for 100-megabit 850nm optical communication.
[0029] The 850nm optoelectronic single-chip integrated receiving chip in the present invention adopts a standard CMOS process of 0.5 μm, and is delivered to a foundry through the layout for preparation. The specific preparation method of the silicon photodetector is combined with image 3 and 4 Elaborated as follows:
[0030] First, a P-type silicon wafer is used as the substrate 7; 10 P-well regions 8 with a thickness of about 2.5 μm are realized by ion implantation on the P-type substrate; + region, realize 10 N in 10 P well regio...
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