2T embedded FLOTOX EEPROM

Abstract

The invention discloses a 2T (2-transistor) embedded FLOTOX (floating gate tunnel oxide) EEPROM (electrically erasable programmable read only memory) characterized in that a selectron is located in the source area of a memotron in a memory cell. By arranging the selectron in the source area of the memotron, a memory array can achieve the operations of erasing and writing-in by only one high voltage. Therefore, the invention dispenses with the voltage peak-peak H (VPPH) and a circuit structure for generating the VPPH, and further reduces a high-voltage resistant component for generating and transferring the VPPH in the circuit, thereby dispensing with at least two layers of photomasks and various technological steps and saving the chip area.

Description

technical field [0001] The invention relates to a non-volatile memory in a semiconductor integrated circuit, in particular to a 2T embedded floating gate electrically erasable read-only memory in the semiconductor integrated circuit. Background technique [0002] like figure 1 As shown, in the structure of the current 2T floating gate electrically erasable read-only memory cell (FLOTOXEEPROM), the selection transistor is located at the drain region of the storage transistor, that is, the bit line (BIT LINE) is connected from the drain terminal of the selection transistor. The advantage of this is that the cells that do not have a selected row but are located in a selected column have the least erase interference. The disadvantage is that a VPPH greater than VPPL needs to be added to the gate of the selection transistor in the selected row to ensure that the gate voltage of the selection transistor is greater than the drain voltage, so that the selection transistor can be in...

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to provide NMOS transistors and PMOS transistors resistant to VPPH high voltage in the process, which increases the difficulty and cost of the process.

And in realizing the high-voltage charge pump (charge pump) circuit, since it is necessary to provide N tubes and P tubes resistant to VPPH high voltage, it also increases the difficulty of the process, increases the circuit complexity and the area of ​​the circuit layout, and improves the manufacturing process. cost

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