Preparation method of low-resistance p-GaN ohmic contact electrode

A technology of ohmic contact electrodes and transparent electrode layers, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of solvent volatilization or precipitation, inconvenient and effective control of process conditions, and poor process repeatability, etc., to achieve simplified operation, The effect of reducing the possibility of process fluctuations and simplifying operation requirements
CN101840964BInactive Publication Date: 2012-04-25INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2012-04-25
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a preparation method of a low-resistance p-GaN ohmic contact electrode, comprising the following steps of: taking a substrate and growing a device epitaxial layer on the substrate; cleaning the surface of the device epitaxial layer; removing oxides on the surface of the device epitaxial layer by adopting a corrosive agent; etching and transferring graphs on a mask to the device epitaxial layer; growing a transparent electrode layer on the surface of the device epitaxial layer; stripping and annealing to enable the transparent electrode layer to react and form a high-resistance layer on the surface of the transparent electrode layer; removing the high-resistance layer on the surface of the transparent electrode layer subjected to reaction; and growing a connecting layer and an electrode thickening layer on the surface of the transparent electrode layer in sequence.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor technology, in particular to a method for preparing a low-resistance p-GaN ohmic contact electrode in a semiconductor optoelectronic device. Background technique

[0002] As a representative of the third-generation semiconductor material, the direct bandgap semiconductor material GaN can form a continuously variable ternary or quaternary solid solution alloy (AlGaN, InGaN, AlInGaN) with InN, AlN, etc., and the corresponding wavelength covers The range from red light to near-ultraviolet light; and it has excellent characteristics such as good chemical stability and thermal stability, so it has great application prospects in the fields of optoelectronics and microelectronics.

[0003] In terms of microelectronics, because the GaN material series has high thermal conductivity and high breakdown field strength, it is very suitable for high-temperature high-power electronic devices and high-frequ...

Claims

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