Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method of low-resistance p-GaN ohmic contact electrode

A technology of ohmic contact electrodes and transparent electrode layers, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of solvent volatilization or precipitation, inconvenient and effective control of process conditions, and poor process repeatability, etc., to achieve simplified operation, The effect of reducing the possibility of process fluctuations and simplifying operation requirements

Inactive Publication Date: 2012-04-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the above-mentioned solvent surface treatment methods, there is a common problem that these solvents will volatilize or precipitate when heated, which makes it inconvenient to effectively control the process conditions and the process repeatability is not good.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of low-resistance p-GaN ohmic contact electrode
  • Preparation method of low-resistance p-GaN ohmic contact electrode
  • Preparation method of low-resistance p-GaN ohmic contact electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The removal of the oxide on the surface of the device epitaxial layer 20 in this example can be aimed at any metal electrode structure including Ni / Au electrode metal. In this example, a closed water bath device was used to prepare the required buffered HF treatment solution with a volume ratio of 2:1 between 1 mol / L ammonium bifluoride solution and 40% HF acid solution.

[0048] First, the epitaxial layer 20 of the GaN device is grown on the substrate 10 by MOCVD, and rapidly annealed at 750° C. for 15 minutes in nitrogen to activate carriers in the p-type layer. Then use trichlorethylene, acetone, methanol, ethanol, and deionized water to ultrasonically clean the epitaxial wafer for five minutes each, to remove organic pollutants adhered to the device epitaxial layer 20 during the growth process, and rinse with sufficient deionized water and blow dry with nitrogen. After completing other process steps of device preparation (depending on the specific device), photolit...

Embodiment 2

[0052] The removal of the high-resistance layer 60 in this example is mainly aimed at electrode structures such as Ni / Au, and the closed water bath device is still used, and the solution used is an oxalic acid solution with a mass fraction of 10%.

[0053] The specific operation steps are: remove the oxide on the epitaxial layer of the device according to Example 1 and deposit the epitaxial wafer with a Ni / Au=5nm / 5nm metal structure after electrode stripping, preferably annealing in oxygen at 550°C for 10 minutes, annealing The morphology and distribution of elements on the surface of the front and rear electrodes can be found in image 3 and Figure 4 The AES spectrum shown. Adjust the temperature of the water bath device to 70°C, and after it stabilizes, use the same method as in Example 1 to place the annealed epitaxial wafer in a polytetrafluoroethylene basket and put it into the 10% oxalic acid solution beaker, rinse the epiwafer with copious amounts of deionized water ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a low-resistance p-GaN ohmic contact electrode, comprising the following steps of: taking a substrate and growing a device epitaxial layer on the substrate; cleaning the surface of the device epitaxial layer; removing oxides on the surface of the device epitaxial layer by adopting a corrosive agent; etching and transferring graphs on a mask to the device epitaxial layer; growing a transparent electrode layer on the surface of the device epitaxial layer; stripping and annealing to enable the transparent electrode layer to react and form a high-resistance layer on the surface of the transparent electrode layer; removing the high-resistance layer on the surface of the transparent electrode layer subjected to reaction; and growing a connecting layer and an electrode thickening layer on the surface of the transparent electrode layer in sequence.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a method for preparing a low-resistance p-GaN ohmic contact electrode in a semiconductor optoelectronic device. Background technique [0002] As a representative of the third-generation semiconductor material, the direct bandgap semiconductor material GaN can form a continuously variable ternary or quaternary solid solution alloy (AlGaN, InGaN, AlInGaN) with InN, AlN, etc., and the corresponding wavelength covers The range from red light to near-ultraviolet light; and it has excellent characteristics such as good chemical stability and thermal stability, so it has great application prospects in the fields of optoelectronics and microelectronics. [0003] In terms of microelectronics, because the GaN material series has high thermal conductivity and high breakdown field strength, it is very suitable for high-temperature high-power electronic devices and high-frequ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L31/18
CPCY02P70/50
Inventor 林孟喆曹青颜庭静陈良惠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com