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Indium zinc gallium oxide (IZGO) sputtering target for transparent conductive film and manufacturing method

A technology of transparent conductive film and sputtering target material, which is applied in sputtering coating, metal material coating process, ion implantation plating, etc., can solve the problems of limited stock in the earth's crust and high cost, and achieve high production efficiency and high production efficiency. The effect of easier process control and high sputtering rate

Inactive Publication Date: 2012-12-26
YIXING BAILUN OPTO ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional process uses ITO semiconductor ceramics (90%In 2 o 3 -10%SnO 2 ) as a sputtering source, the ITO transparent conductive film is generally prepared by DC magnetron sputtering method in argon or argon-oxygen mixed atmosphere at a temperature of 100-550 degrees Celsius on the substrate. %, and the resistivity is less than 10×10 -4 Ω.cm, but due to the high cost of ITO materials, the main component of which is rare indium metal, and the stock in the earth’s crust is limited, so it is necessary to study new low-cost manufacturing targets for transparent conductive films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Weigh 600 grams of ZnO powder with a purity of 4N and an average particle size of 0.5 microns, and add 5% by weight of In 2 o 3 and 0.5% Ga with an average particle size of 5 microns 2 o 3 Powder. Add 35% by weight of deionized pure water and 0.5% of triethanolamine organic additives to mix, use a ball mill to mix for more than 16 hours, add 1% of the total weight of polyvinyl alcohol organic binder, and ball mill for 2 hours, and spray the slurry Drying and granulation treatment to obtain target raw materials with an average particle diameter of 50 microns, using a metal mold of 1 ton / CM 2 The green body with a diameter of 150 mm and a thickness of 10 mm is obtained by pressure molding with a relative density greater than 54%. The green body is kept in an air furnace at 500 degrees Celsius for 45 hours to remove organic additives, and the temperature is raised to 1500 degrees Celsius for sintering and compacting to obtain a relative density of 99%. The sintered bod...

Embodiment 2

[0028] Weigh 990 grams of ZnO powder with a purity of 5N and an average particle size of 0.5 microns, add 5 grams of In 2 o 3 and 5 grams of Ga with an average particle size of 5 microns 2 o 3 Powder. Add 35% by weight of deionized pure water and 0.5% of triethanolamine organic additives to mix, use a ball mill to mix for more than 16 hours, add 1% of the total weight of polyvinyl alcohol organic binder, and ball mill for 2 hours, and spray the slurry Drying and granulation treatment to obtain target raw materials with an average particle diameter of 50 microns, using a metal mold of 1 ton / CM 2 The green body with a diameter of 150 mm and a thickness of 10 mm is obtained by pressure molding with a relative density greater than 54%. The green body is kept in an air furnace at 500 degrees Celsius for 45 hours to remove organic additives, and the temperature is raised to 1500 degrees Celsius for sintering and compacting to obtain a relative density of 99%. The sintered body i...

Embodiment 3

[0030] Weigh 800 grams of ZnO powder with a purity of 6N and an average particle size of 0.5 microns, add 100 grams of In 2 o 3 and 100 grams of Ga with an average particle size of 5 microns 2 o 3 Powder. Add 350 grams of deionized pure water and 5 grams of triethanolamine organic additives, mix them with a ball mill for more than 16 hours, add 10 grams of polyvinyl alcohol organic binder, ball mill for another 2 hours, and spray the slurry to granulate Processing to obtain the target raw material with an average particle diameter of 50 microns, using a metal mold of 1 ton / CM 2 The green body with a diameter of 150 mm and a thickness of 10 mm is obtained by pressure molding with a relative density greater than 54%. The green body is kept in an air furnace at 500 degrees Celsius for 45 hours to remove organic additives, and the temperature is raised to 1500 degrees Celsius for sintering and compacting to obtain a relative density of 99%. The sintered body is processed and g...

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Abstract

The invention discloses an indium zinc gallium oxide (IZGO) sputtering target for a transparent conductive film and a manufacturing method. The IZGO sputtering target comprises the following raw material powder in percentage by weight: 80 to 99 percent of ZnO, 0.1 to 10 percent of In2O3, 0.1 to 10 percent of Ga2O3, wherein the average grain diameter of the powder is 0.05 to 50 microns, and the purity of the raw material powder is more than or equal to 4N. The invention also discloses a method for manufacturing the IZGO sputtering target for the transparent conductive film. The production process for producing the transparent conductive film by magnetron sputtering is easier to control by using the material obtained by the method; and the severe poisoning phenomenon of IZGO is avoided. The sputtering process does not need heating so as to be more advantageous in the production of flexible conductive films such as plastic and the like. The resistivity of the produced transparent conductive film is less than 7*10<-4>omega.cm; and the transmittance when the wavelength of visible light is 400 to 700nm is over 85 percent and can meet the requirements of various transparent conductive films.

Description

technical field [0001] The invention relates to a photoelectric material, in particular to an IZGO sputtering target material for a transparent conductive film and a manufacturing method thereof. Background technique [0002] At present, transparent conductive films manufactured by magnetron sputtering are necessary functional materials for liquid crystal displays, flat panel displays, electrostatic shielding, and solar cells. At present, the DC magnetron sputtering method is the leading preparation process for transparent conductive films used in international high-end display devices. The traditional process uses ITO semiconductor ceramics (90%In 2 o 3 -10%SnO 2 ) as a sputtering source, the ITO transparent conductive film is generally prepared by DC magnetron sputtering method in argon or argon-oxygen mixed atmosphere at a temperature of 100-550 degrees Celsius on the substrate. %, and the resistivity is less than 10×10 -4 Ω.cm, but due to the high cost of ITO materi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C04B35/453C04B35/622
Inventor 孔伟华
Owner YIXING BAILUN OPTO ELECTRONICS MATERIAL