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Method for preparing cadmium sulfide nanometer membrane by self assembly

A nano-film and cadmium sulfide technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of high cost of cadmium sulfide film and difficulty in preparing nano-film, and achieve easy large-area film production, The effect of uniform size and low preparation cost

Inactive Publication Date: 2010-10-06
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These film-making processes are relatively mature, but require special equipment, complex preparation processes, and harsh vacuum and high temperature conditions, making the cost of preparing cadmium sulfide thin films too high, and it is difficult to achieve simple and rapid preparation of nano-films

Method used

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  • Method for preparing cadmium sulfide nanometer membrane by self assembly
  • Method for preparing cadmium sulfide nanometer membrane by self assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Embodiment 1: 1) get the analytically pure cadmium carbonate (CdCO) of 2.00g 3 ) was placed in a beaker, and 3mL of trimethylamine (C3H9N) was added dropwise to the beaker to obtain a mixture A; 2) Add deionized water to the mixture A and stir evenly to form a 200mL transparent solution B; 3) Add to the solution B 2.00 g of PVP (polyvinylpyrrolidone) was stirred evenly by magnetic force at room temperature to obtain solution C.

[0012] 4) Add 3.00 g of analytically pure thioacetamide (TAA, molecular formula: CH3CSNH2) to solution C and stir evenly to obtain solution D; 5) adjust the pH value of solution D to 4.5 to obtain precursor solution E; 6) take ITO Substrate First, place the ITO substrate in solution F for ultrasonic cleaning for 15 minutes to remove the acidic substances on the surface of the ITO substrate, then place the ITO substrate in solution G for ultrasonic cleaning for 15 minutes, and remove the alkaline substances with absolute ethanol and deionized wa...

Embodiment 2

[0015] Embodiment 2: 1) get the analytically pure cadmium carbonate (CdCO) of 5.00g 3 ) was placed in a beaker, and 5 mL of trimethylamine (C3H9N) was added dropwise to the beaker to obtain a mixture A; 2) Add deionized water to the mixture A and stir evenly to form a 200 mL transparent solution B; 3) Add to the solution B 3.00 g of PVP (polyvinylpyrrolidone) was stirred evenly by magnetic force at room temperature to obtain solution C.

[0016] 4) Add 4.00 g of analytically pure thioacetamide (TAA, molecular formula: CH3CSNH2) to solution C and stir evenly to obtain solution D; 5) adjust the pH value of solution D to 6.0 to obtain precursor solution E; 6) take ITO Substrate First, place the ITO substrate in solution F for ultrasonic cleaning for 15 minutes to remove the acidic substances on the surface of the ITO substrate, then place the ITO substrate in solution G for ultrasonic cleaning for 15 minutes, and remove the alkaline substances with absolute ethanol and deionized ...

Embodiment 3

[0018] Embodiment 3: 1) get the analytically pure cadmium carbonate (CdCO) of 6.00g 3 ) was placed in a beaker, and 6 mL of trimethylamine (C3H9N) was added dropwise to the beaker to obtain a mixture A; 2) Add deionized water to the mixture A and stir evenly to form a 200 mL transparent solution B; 3) Add to the solution B 6.00 g of PVP (polyvinylpyrrolidone) was stirred evenly by magnetic force at room temperature to obtain solution C.

[0019] 4) Add 5.5 g of analytically pure thioacetamide (TAA, molecular formula: CH3CSNH2) to solution C and stir evenly to obtain solution D; 5) adjust the pH value of solution D to 8.0 to obtain precursor solution E; 6) take ITO Substrate First, place the ITO substrate in solution F for ultrasonic cleaning for 15 minutes to remove the acidic substances on the surface of the ITO substrate, then place the ITO substrate in solution G for ultrasonic cleaning for 15 minutes, and remove the alkaline substances with absolute ethanol and deionized w...

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Abstract

The invention provides a method for preparing a cadmium sulfide nanometer membrane by self assembly. The method comprises the following steps of: mixing cadmium carbonate and trimethylamine to obtain A, and adding deionized water into A to obtain B; adding PVP into the B, performing magnetic stirring to obtain C, adding thioacetamide into the C, and uniformly stirring the mixture to obtain D; adjusting a pH value of the solution D to 4.0 to 10.0 to obtain precursor solution; soaking a clean ITO base plate in benzene solution of CTAB at room temperature, taking the base plate out, and drying the base plate in an argon protective atmosphere; placing the dried ITO base plate in the precursor solution for deposition at room temperature for 5 to 40 hours to prepare a cadmium sulfide membrane; and drying the prepared cadmium sulfide membrane in a vacuum dry box to obtain the cadmium sulfide nanometer membrane. Because the method of the invention adopts the self assembly, the cadmium sulfide nanometer membrane prepared by the method has a complete shape and uniform size; and the thickness of the membrane and the size of crystal grains can be controlled by controlling the concentration and pH value of the reaction precursor solution and the deposition time. The cadmium sulfide nanometer membrane prepared by the method has the advantages of high repeatability and easy formation of large-area membranes; and the method has the advantages of easy operation, readily available raw materials and low preparation cost.

Description

technical field [0001] The invention relates to a preparation method of a cadmium sulfide nano film, in particular to a method for preparing a uniform and smooth cadmium sulfide nano film simply and quickly, and the grain size of the film is about 30nm by self-assembly for preparing the cadmium sulfide nano film. Background technique [0002] Cadmium sulfide (CdS) is a wide bandgap semiconductor material with a bandgap width of about 2.42eV. CdS thin film is an important n-type window material in solar cells, and forms a pn junction with p-type materials, which is an important part of solar cells. So far, the methods for preparing cadmium sulfide thin films include vacuum coating, ion sputtering, electrodeposition, molecular beam epitaxy, high temperature thermal spraying, and chemical deposition. These film-making processes are relatively mature, but require special equipment, complex preparation processes, and harsh vacuum and high temperature conditions, making the cost ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0296
CPCY02P70/50
Inventor 黄剑锋张钦峰胡宝云曹丽云吴建鹏熊信柏曾燮榕
Owner SHAANXI UNIV OF SCI & TECH
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