Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof

Abstract

The invention discloses a silicon dioxide optical waveguide device based on a B-Ge-codoped upper cladding and a preparation method thereof. The preparation method comprises the following steps of: sedimentating a silicon dioxide lower cladding on a substrate, sedimentating a Ge-doped silicon dioxide film on the upper surface of the lower cladding, forming waveguide sandwich layers with a square cross section by lithography and etching processes; sedimentating a B-Ge-codoped silicon dioxide upper cladding on the silicon dioxide lower cladding and the waveguide sandwich layers without forming a gap between the upper cladding and the waveguide structure of the sandwich layer; and carrying out a high-temperature thermal-annealing process on the sedimented B-Ge-codoped silicon dioxide upper cladding and refluxing the upper cladding film with a low melting point into a gap between adjacent waveguide sandwich layers so that the shadowing effect action is lessened in a subsequent sedimentation film layer to fully fill the inter-waveguide gap and lessen the device loss. The silicon dioxide waveguide device structure based on the B-Ge-codoped upper cladding can be widely applied to devices in a waveguide structure with a high aspect ratio, such as splitters, couplers, array waveguide gratings, and the like.

Description

Technical field [0001] The invention relates to a planar optical waveguide device, in particular to a silicon dioxide optical waveguide device based on a boron-germanium co-doped upper cladding layer and a preparation method thereof. Background technique [0002] In the field of electronic technology, the development of discrete devices into integrated circuits has changed the production mode of the electronics industry. Similarly, in the field of optical technology, the current single form of various optical components on the road to integrated optics in the future will also greatly change the current status of traditional optical technology, and have a profound impact on the development of military and civilian information systems. Similar to the concept of IC chips, Planar Lightwave Circuits (PLCs) use manufacturing technology compatible with traditional semiconductor processes (Complementary Metal Oxide Semiconductor, CMOS) to integrate optical modules on the wafer, which hel...

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Problems solved by technology

However, this method additionally uses a highly toxic gas phosphine, and phosphorus is relatively easy to be affected by moisture, which increases the risk of the process and the instability of the product

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