Infrared focal plane detector of in-situ integrated immersion micro convex mirror array
An infrared focal plane and detector technology, which is applied in radiation control devices and other directions, can solve problems such as the limitation of resolution diffraction limit, and achieve the effects of alleviating severe limitations, suppressing crosstalk, and reducing the size of photosensitive elements
Active Publication Date: 2011-11-02
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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However, after the micro-convex mirror array is integrated in situ, the pixel size of the infrared detector limited by the diffraction limit directly becomes the optical diffraction Airy disk radius r Airy
Therefore, when the pixel size of the infrared detector is close to or smaller than the optical diffraction Airy disk radius r Airy , the resolution of the in-situ integrated micro-convex mirror array infrared focal plane detector is severely limited by the diffraction limit
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[0015] The mercury cadmium telluride (Hg 1-x Cd x Te) Photovoltaic infrared focal plane detector is an embodiment, in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail:
[0016] See figure 1 The mercury cadmium telluride infrared focal plane detector of the submerged micro-convex mirror array includes: a mercury cadmium telluride photosensitive element array chip 1, a readout circuit 2, a hybrid interconnected indium column 3, a micro-convex mirror array 4 and an infrared mirror window 5. The mercury cadmium telluride infrared photosensitive element array chip 1 is composed of a gallium arsenide substrate 101, and a photosensitive element array responding to infrared target radiation is placed on the gallium arsenide substrate 101, and each photosensitive element is composed of a p-type layer of mercury cadmium telluride 102 and The n-type region 103 formed by boron ion implantation is formed. The micro co...
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The invention discloses an infrared focal plane detector of an in-situ integrated immersion micro convex mirror array, which adopts a structural scheme that the infrared focal plane detector of an immersion micro convex mirror array of an infrared mirror window is integrated in situ in a foresight light field direction. The infrared focal plane detector of the immersion micro convex mirror array not only has the advantages of micro convex mirror array-type detector which can inhibit crosstalk and improve responsiveness, but also can reduce the size of a photosensitive element which is limitedby a diffraction limit by migrating the micro lens array and a foresight light field coupling interface to the position of the infrared mirror window. Therefore, the defect that the micro convex mirror array-type infrared focal plane detector is seriously limited by an infrared diffraction limit is overcome. Simultaneously, multiple kinds of materials with proper reflectivity, such as low-temperature epoxy glue, silicone dioxide, zinc sulfide and the like, can be made into the infrared mirror window of the infrared focal plane detector of the immersion micro convex mirror array conveniently. Therefore, the infrared focal plane detector has the characteristics of reasonable structure and high makeable property.
Description
technical field [0001] The invention relates to photoelectric detection device technology, in particular to a submerged micro-convex mirror array type infrared focal plane detector integrated with an infrared mirror window in situ. Background technique [0002] Infrared focal plane array device is an advanced imaging sensor with both infrared information acquisition and information processing functions. There are important and extensive applications in military and civilian fields. Due to its irreplaceable status and role, major industrial countries in the world have listed the preparation technology of infrared focal plane array devices as a high-tech project for key development. [0003] Driven by advanced infrared application systems, infrared detectors have entered a development stage characterized by large area arrays, miniaturization, and multicolorization, see S.Horn, P.Norton, T.Cincotta, A.Stoltz , et al, "Challenges for third-generation cooled images", proceeding...
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IPC IPC(8): H01L27/144
Inventor 叶振华陆伟黄建邢雯刘丹冯靖文林春胡晓宁丁瑞军何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI