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Process for producing electroconductive inorganic oxide particles and electroconductive inorganic oxide particles produced by the process

An inorganic oxide, conductive technology, applied in the field of conductive inorganic oxide particles, can solve the problems of not being able to provide cheap products to the market, reduce manufacturing costs, etc., achieve good electrical conductivity, simple composition, and improved purity

Inactive Publication Date: 2010-11-24
HIRAAKI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, as long as the conductive inorganic oxide powder using indium oxide is produced, there is a certain limit in reducing the production cost, so it is impossible to provide cheap products to the market.

Method used

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  • Process for producing electroconductive inorganic oxide particles and electroconductive inorganic oxide particles produced by the process
  • Process for producing electroconductive inorganic oxide particles and electroconductive inorganic oxide particles produced by the process
  • Process for producing electroconductive inorganic oxide particles and electroconductive inorganic oxide particles produced by the process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0099] In this example, the aluminum component (Al 3+ ) was doped with zinc oxide (ZnO) particles (CP-1) manufactured by Ishihara Sangyo Co., Ltd. Here, using figure 1 The electrolytic doping device 1 shown. The electrolytic doping device 1 is composed of an electrolytic cell 2 , an anode electrode 3 (aluminum electrode), a cathode electrode 4 (aluminum electrode), a stirring unit 5 , and an external power source 6 . In addition, aluminum plates of 6.0 cm×6.0 cm were used for both the anode electrode 3 and the cathode electrode 4 , and the electrode distance between the anode electrode 3 and the cathode electrode 4 was 3.0 cm. Each step will be described below.

[0100] Step A: Put 400 ml of ion-exchanged water in the electrolytic cell 2 of the electrolytic doping device 1, and add 10 g of zinc oxide powder as inorganic oxide particles and zinc chloride (ZnCl 2 ) 0.05 g, stirred by the stirring unit 5 to prepare a slurry 7 containing zinc oxide particles. In addition, the...

Embodiment 2

[0109] In this example, the gallium component (Ga 3+ ) was doped with zinc oxide (ZnO) particles (CP-1) manufactured by Ishihara Sangyo Co., Ltd. Here, using figure 1The electrolytic doping device 1 shown. The electrolytic doping device 1 is composed of an electrolytic cell 2 , an anode electrode 3 (gallium electrode), a cathode electrode 4 (copper electrode), a stirring unit 5 , and an external power source 6 . In addition, copper plates of 6.0 cm×6.0 cm were used for both the anode electrode 3 and the cathode electrode 4 , and the electrode pitch between the anode electrode 3 and the cathode electrode 4 was set to 3.0 cm. Each step will be described below.

[0110] Step A: Put 400 ml of ion-exchanged water in the electrolytic cell 2 of the electrolytic doping device 1, and add 10 g of zinc oxide powder as inorganic oxide particles and zinc chloride (ZnCl 2 ) 0.05 g, stirred by the stirring unit 5 to prepare a slurry 7 containing zinc oxide particles. In addition, the zi...

Embodiment 3

[0119] In this example, the iridium component (Ir 3+ ) was doped with zinc oxide (ZnO) particles (CP-1) manufactured by Ishihara Sangyo Co., Ltd. Here, using figure 1 The electrolytic doping device 1 shown. The electrolytic doping device 1 is composed of an electrolytic cell 2 , an anode electrode 3 (iridium electrode), a cathode electrode 4 (copper electrode), a stirring unit 5 , and an external power source 6 . In addition, copper plates of 6.0 cm×6.0 cm were used for both the anode electrode 3 and the cathode electrode 4 , and the electrode pitch between the anode electrode 3 and the cathode electrode 4 was set to 3.0 cm. Each step will be described below.

[0120] Step A: Put 400 ml of ion-exchanged water in the electrolytic cell 2 of the electrolytic doping device 1, and add 10 g of zinc oxide powder as inorganic oxide particles and zinc chloride (ZnCl 2 ) 0.05 g, stirred by the stirring unit 5 to prepare a slurry 7 containing zinc oxide particles. In addition, the z...

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Abstract

This invention provides electroconductive inorganic oxide particles that have a finer particle size and an improved powder resistance as compared with conventional electroconductive inorganic oxide particles. The electroconductive inorganic oxide particles are produced by a process for producing electroconductive inorganic oxide particles, to which electroconductivity has been imparted by doping inorganic oxide particles with a dopant metallic component, characterized in that the electroconductive inorganic oxide particles are produced through the following steps A to D. The production process comprises preparing a slurry containing inorganic oxide particles (step A), allowing a dopant metallic component to co-exist in the slurry containing inorganic oxide particles and electrolytically doping the dopant metallic component into the inorganic oxide particles using an electrolytic doping apparatus (1) by an electrolytic method (step B), filtering and drying the slurry subjected to electrolytic doping to collect particles through filtration (step C), and firing the particles collected by the filtration to produce electroconductive inorganic oxide particles (step D).

Description

technical field [0001] The present invention relates to a preparation method of conductive inorganic oxide particles and conductive inorganic oxide particles obtained by the preparation method. In particular, it relates to conductive zinc oxide particles and the like suitable for use as a material for forming a transparent electrode. Background technique [0002] Conventionally, conductive inorganic oxide particles have been used in various applications. Among them, as disclosed in Patent Document 1, it is actively used as a material constituting a transparent electrode in a liquid crystal display device. According to the description of Patent Document 1, for example, a crystallized ITO (Indium Tin Oxide) film is used. Such an ITO film is often formed using ITO powder composed of so-called ITO particles. [0003] As disclosed in Patent Document 2, this ITO particle is a kind of indium oxide (In 2 o 3 ) particles doped with tin (Sn) containing tin indium oxide, which as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B13/14C01B19/00C01B33/18C01F7/02C01F17/00C01G9/02C01G19/02C01G23/047C01G25/02C01G31/02C01G53/04C25B1/00H01B1/08H01B13/00
CPCC01G9/00H01B1/20H01B1/08C01P2006/40C01P2004/04C01B33/18C01P2002/54C01G9/02
Inventor 高木健平昭大成中岛邦彦
Owner HIRAAKI