Guide die structure for growing extra-thick monocrystal alumina wafer

Abstract

The invention provides a crucible guide die structure for growing an extra-thick monocrystal alumina wafer. The crucible guide die structure has the advantages of capacity of growing 8 to 18-mm type extra-thick monocrystal alumina wafers, simple die core structure of each crystallizer, capacity of controlling and adjusting the temperature gradient of crystallization table-board wafers, and guarantee of no bubbles, no growth striations, low internal stress, difficult cracking and high qualification rate of crystal finished products. The crucible guide die structure comprises a crucible, wherein the crucible is arranged in a heater through a grip; the heater is arranged in an electrode plate; a thermal insulation screen is arranged outside the heater; the crystallizers are arranged in the crucible; a seed crystal is arranged above the crystallization table-board of each crystallizer; the seed crystal is connected with a seed crystal coupling sleeve through a connection structure; the crucible has a cuboid shape or a rectangular strip shape with two arc ends; the crystallizers are arranged along the central line of the length direction of the crucible sequentially; and the heater has a cuboid shape or a rectangular strip shape with two arc ends. The crucible guide die structure is characterized in that: each crystallizer comprises a die core; the die core comprises two inversed L-shaped molybdenum plates; the end parts of the two inversed L-shaped molybdenum plates are hermetically welded with each other; and the two inversed L-shaped molybdenum plates are in symmetrical rivet weld connection with each other through a molybdenum rod.

Description

technical field [0001] The invention relates to the technical field of growing and shaping single-crystal alumina, in particular to a guide mold structure for growing extra-thick and large single-crystal alumina sheets. Background technique [0002] Compared with the pulling method, temperature gradient method, and Kyropoulos method, the guided mode method has the advantages of low energy consumption, high production efficiency, low cost, and reasonable stress distribution. It is more suitable for GaN epitaxy and has good quality. , The characteristics of high pass rate. The guide mode method at home and abroad usually adopts radio frequency induction heating or graphite resistance heating. The utility model with the publication number of CN200981899 discloses a guide mode structure for growing and forming single crystal alumina porcelain. The heater and crucible are cuboid or two Rectangular strips with arc-shaped ends, rectangular parallelepipeds or rectangular strips wit...

AI Technical Summary

Problems solved by technology

However, because the crystallizer includes a mold core and a mold sleeve, the mold core is installed in the mold sleeve, and the mold core and the mold sleeve are processed from an integral molybdenum block with a large thickness. When growing single crystal alumina sheets, it is easy to cause temperature lag. Suitable for growing single crystal alumina ceramic tubes or 3mm ~ 5mm single crystal alumina ceramic tiles, not suitable for growing extra thick and large single crystal alumina tiles

At present, the thickness of a single-crystal aluminum oxide sheet used for growing a LED substrate by radio frequency in foreign countries is 5 mm, which requires subsequent cutting, grinding, and polishing processes after forming and growing, and the material utilization rate is low, and the final production cost is high; in addition, foreign countries In the crucible guide mode structure for growing and forming single crystal alumina flakes, after multi-mode is adopted to increase the feeding amount, the core structure of the crystallizer is complicated, and the temperature gradient at the growth crystallization table is large, which is easy to cause single crystal alumina Chip cracking, low yield of finished products

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