Method for preparing gate stack of metallic nano crystal memory

A metal nanocrystal and memory technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of poor metal nanocrystal uniformity, high annealing temperature, and complicated process, so as to avoid application bottlenecks and high cost effect
CN101908477AInactive Publication Date: 2010-12-08FUDAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FUDAN UNIV
Publication Date
2010-12-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention belongs to the technical field of semiconductor memories, and particularly relates to a method for preparing a gate stack of a metallic nano crystal memory. The method comprises the following steps of: depositing a tunneling layer on a single crystal silicon substrate; spinning a layer of polyimide film on the tunneling layer; putting an anodic aluminum oxide template on the polyimide film serving as an etching mask; performing reactive ion etching on the polyimide film to form a polyimide mask; removing the anodic aluminum oxide template; depositing a layer of ultra-thin metal in the polyimide mask; removing the polyimide mask by adopting lift-off technology; depositing a barrier layer; and depositing a gate electrode. Because anodic aluminum oxide is used as a non-photolithographic mask plate, the formed nano crystal array has high density and uniform size distribution.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a method for preparing a metal nanocrystal memory gate stack. Background technique

[0002] In the field of nanocrystalline non-volatile memories, there are mainly two types of memories: semiconductor nanocrystals and metal nanocrystals. Among them, metal nanocrystals have a higher density of states near the Fermi level and better coupling with the channel. The metal work function can be selected in a wide range and is favored. However, the acquisition of high-density metal nanocrystals is the key to the preparation of high-performance metal nanocrystal memory. At present, the preparation of metal nanocrystals is mainly obtained by two methods: rapid thermal annealing and template self-assembly. Metal nanocrystals obtained by rapid thermal annealing method have poor uniformity and require high annealing temperature. The template self-assembly method ma...

Claims

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