Method for preparing gate stack of metallic nano crystal memory

A metal nanocrystal and memory technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high annealing temperature, poor uniformity of metal nanocrystal, complex process, etc., so as to avoid high cost and avoid application bottleneck effect

Inactive Publication Date: 2011-12-07
FUDAN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Metal nanocrystals obtained by rapid thermal annealing method have poor uniformity and require high annealing temperature
The template self-assembly method mainly uses protein chaperone crystals or PS-b-PMMA[1] as a template to obtain nanocrystals, which have high density and good uniformity, but the process is very complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing gate stack of metallic nano crystal memory
  • Method for preparing gate stack of metallic nano crystal memory
  • Method for preparing gate stack of metallic nano crystal memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Below in conjunction with accompanying drawing, the present invention is described in detail.

[0030] Step 1: Refer to figure 1 , deposit a layer 201 on the substrate 200 as a charge tunneling layer, wherein 200 is a single crystal silicon wafer; 201 is an atomic layer deposited Al 2 o 3 The thin film has a thickness of 5-12 nanometers.

[0031] Step 2: Refer to figure 2 , spin coating a layer of 202 on the 201, wherein 202 is a polyimide film with a thickness of 30-100 nanometers.

[0032] Step 3: Reference image 3 , place 203 on 202 and make them in close contact, wherein 203 is an alumina template, and the aperture of the template is 20-30 nanometers.

[0033] Step 4: Reference Figure 4 , using 203 as a mask to carry out reactive ion etching on 202, and the etching atmosphere is oxygen plasma.

[0034] Step 5: Reference Figure 5 , remove 203 by mechanical stripping or acid etching.

[0035] Step 6: Reference Figure 6 A layer of metal 204 is deposited ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of semiconductor memories, and particularly relates to a method for preparing a gate stack of a metallic nano crystal memory. The method comprises the following steps of: depositing a tunneling layer on a single crystal silicon substrate; spinning a layer of polyimide film on the tunneling layer; putting an anodic aluminum oxide template on the polyimide film serving as an etching mask; performing reactive ion etching on the polyimide film to form a polyimide mask; removing the anodic aluminum oxide template; depositing a layer of ultra-thin metal in the polyimide mask; removing the polyimide mask by adopting lift-off technology; depositing a barrier layer; and depositing a gate electrode. Because anodic aluminum oxide is used as a non-photolithographic mask plate, the formed nano crystal array has high density and uniform size distribution.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a method for preparing a metal nanocrystal memory gate stack. Background technique [0002] In the field of nanocrystalline non-volatile memories, there are mainly two types of memories: semiconductor nanocrystals and metal nanocrystals. Among them, metal nanocrystals have a higher density of states near the Fermi level and better coupling with the channel. The metal work function can be selected in a wide range and is favored. However, the acquisition of high-density metal nanocrystals is the key to the preparation of high-performance metal nanocrystal memory. At present, the preparation of metal nanocrystals is mainly obtained by two methods: rapid thermal annealing and template self-assembly. Metal nanocrystals obtained by rapid thermal annealing method have poor uniformity and require high annealing temperature. The template self-assembly method ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/283
Inventor 陈红兵丁士进
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap