Three-dimensional micro heater with groove-shaped heating film region and manufacturing method thereof

Abstract

The invention relates to a three-dimensional micro heater with a groove-shaped heating film region and a manufacturing method thereof. The three-dimensional micro heater is characterized in that: the groove-shaped heating film region of which the cross section is in a V-shaped or an inverse trapezoid-shaped structure is connected with a substrate framework through a supporting suspended beam; a heat resistance wire is distributed inside a groove of the heating film region in the form of fold line and is connected with the electrode on the substrate framework through a lead wire on the supporting suspended beam; and a heat insulation cavities formed by a silicon anisotropic wet etching method is arranged below the heating film region and the supporting suspended beam. The heat resistance wire of the three-dimensional micro heater is distributed inside the groove of the heating film region with a three-dimensional structure, has low heat loss caused by heat convection and is favorable for reducing power consumption of the heater. The groove structure concentrates heat, improves the heating efficiency and is favorable for application of the heater in the fields of infrared light sources and sensing.

Description

technical field

[0001] The invention relates to a three-dimensional micro-heater with a groove-shaped heating film region and a manufacturing method thereof, belonging to the field of micro-electromechanical systems (MEMS). Background technique

[0002] With the continuous development of micro-processing technology, micro-heaters based on MEMS technology have begun to be widely used in the fields of gas detection, environmental monitoring and infrared light sources. Due to the continuous promotion and deepening of applications, the requirements for low power consumption, low cost, high performance and high reliability of micro heaters are also increasingly strong. How to make a heater with low power consumption and high performance has always been the goal pursued by those skilled in the art.

[0003] At present, micro-heaters based on silicon substrates can be divided into two types from the supporting membrane structure, namely closed membrane type and suspended membrane ...

Examples

Embodiment 1

[0036] The structure diagram of this embodiment can be found in figure 1 As shown in (a), the specific production method is as follows:

[0037] 1. Substrate selection. A 4-inch silicon wafer with an N-type (100) plane is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of trimming is less than 1%.

[0038] 2. Fabrication of front-side etched windows for formation of recessed structures. First, a silicon oxide film with a thickness of 1.0 microns is grown on the surface of the silicon wafer by thermal oxidation. Then perform front photolithography to make a window pattern, and use reactive ion etching (RIE) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0039] 3. Make a groove with a "V" shape or an inverted trapezoidal structure in cross section. Under the protection of silicon oxide, use KOH etching solution to etch out ...

Embodiment 2

[0046] The structure diagram of this embodiment can be found in figure 2 As shown in (a), the specific production method is as follows:

[0047] 1. Substrate selection. A 4-inch silicon wafer with an N-type (100) plane is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of trimming is less than 1%.

[0048] 2. Fabrication of front-side etched windows for formation of recessed structures. First, a silicon oxide film with a thickness of 1.0 microns is grown on the surface of the silicon wafer by thermal oxidation. Then perform front photolithography to make a window pattern, and use reactive ion etching (RIE) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0049] 3. Make a groove with a "V" shape or an inverted trapezoidal structure in cross section. Under the protection of silicon oxide, use KOH etching solution to etch out ...

Embodiment 3

[0056] The structure diagram of this embodiment can be found in Figure 4 As shown, the specific production method is as follows:

[0057] 1. Substrate selection. A 4-inch silicon wafer with an N-type (100) plane is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 450±10 microns, and the angle error of trimming is less than 1%.

[0058] 2. Fabrication of front-side etched windows for formation of recessed structures. First, a silicon oxide film with a thickness of 1.5 microns is grown on the surface of a silicon wafer by means of low-pressure chemical vapor deposition (LPCVD). Then perform front photolithography to make a window pattern, and use reactive ion etching (RIE) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0059] 3. Make a groove with a "V" shape or an inverted trapezoidal structure in cross section. Under the protection of silicon oxide, use KOH ...

technical field

[0001] The invention relates to a three-dimensional micro-heater with a groove-shaped heating film region and a manufacturing method thereof, belonging to the field of micro-electromechanical systems (MEMS). Background technique

[0002] With the continuous development of micro-processing technology, micro-heaters based on MEMS technology have begun to be widely used in the fields of gas detection, environmental monitoring and infrared light sources. Due to the continuous promotion and deepening of applications, the requirements for low power consumption, low cost, high performance and high reliability of micro heaters are also increasingly strong. How to make a heater with low power consumption and high performance has always been the goal pursued by those skilled in the art.

[0003] At present, micro-heaters based on silicon substrates can be divided into two types from the supporting membrane structure, namely closed membrane type and suspended membrane ...

Examples

Embodiment 1

[0036] The structure diagram of this embodiment can be found in figure 1 As shown in (a), the specific production method is as follows:

[0037] 1. Substrate selection. A 4-inch silicon wafer with an N-type (100) plane is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of trimming is less than 1%.

[0038] 2. Fabrication of front-side etched windows for formation of recessed structures. First, a silicon oxide film with a thickness of 1.0 microns is grown on the surface of the silicon wafer by thermal oxidation. Then perform front photolithography to make a window pattern, and use reactive ion etching (RIE) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0039] 3. Make a groove with a "V" shape or an inverted trapezoidal structure in cross section. Under the protection of silicon oxide, use KOH etching solution to etch out ...

Embodiment 2

[0046] The structure diagram of this embodiment can be found in figure 2 As shown in (a), the specific production method is as follows:

[0047] 1. Substrate selection. A 4-inch silicon wafer with an N-type (100) plane is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of trimming is less than 1%.

[0048] 2. Fabrication of front-side etched windows for formation of recessed structures. First, a silicon oxide film with a thickness of 1.0 microns is grown on the surface of the silicon wafer by thermal oxidation. Then perform front photolithography to make a window pattern, and use reactive ion etching (RIE) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0049] 3. Make a groove with a "V" shape or an inverted trapezoidal structure in cross section. Under the protection of silicon oxide, use KOH etching solution to etch out ...

Embodiment 3

[0056] The structure diagram of this embodiment can be found in Figure 4 As shown, the specific production method is as follows:

[0057] 1. Substrate selection. A 4-inch silicon wafer with an N-type (100) plane is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 450±10 microns, and the angle error of trimming is less than 1%.

[0058] 2. Fabrication of front-side etched windows for formation of recessed structures. First, a silicon oxide film with a thickness of 1.5 microns is grown on the surface of a silicon wafer by means of low-pressure chemical vapor deposition (LPCVD). Then perform front photolithography to make a window pattern, and use reactive ion etching (RIE) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0059] 3. Make a groove with a "V" shape or an inverted trapezoidal structure in cross section. Under the protection of silicon oxide, use KOH ...

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