Method for producing polysilicon with silicon tetrafluoride reduced by plasmas

A technology of silicon tetrafluoride and plasma, applied in the direction of silicon, etc., can solve the problems of serious environmental pollution, high energy consumption, and high production cost, and achieve the effects of simple operation in the production process, reduced production cost, and low consumption of raw materials

Inactive Publication Date: 2010-12-29
应盛荣
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] 1. The investment is huge; the investment per ton of polysilicon production capacity is as high as 1 million yuan or more
[0011] 2. Low utilization rate of raw materials
[0012] 3. High energy consumption
[0013] 4. High production cost
[0014] 5.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing polysilicon with silicon tetrafluoride reduced by plasmas
  • Method for producing polysilicon with silicon tetrafluoride reduced by plasmas
  • Method for producing polysilicon with silicon tetrafluoride reduced by plasmas

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0038] Example 1:

[0039] 1. React silica powder with a content of 99% with hydrogen fluoride to generate silicon tetrafluoride and water. Purify silicon tetrafluoride gas to a purity of 99.99%; purify industrial-grade hydrogen to a high-purity hydrogen of 99.9999%.

[0040] 2. Mix the purified silicon tetrafluoride gas and hydrogen in a mixer.

[0041] 3. Evacuate the plasma reactor and the whole system first, and then pass in purified hydrogen to clean the system air flow. After cleaning, the entire system is filled with hydrogen; then turn on the power of the plasma reactor to generate plasma in the plasma reactor.

[0042] 4. Pour the mixed hydrogen and silicon tetrafluoride gas into the reactor. A chemical reaction occurs immediately, and polysilicon powder appears.

[0043] 5. Under the action of the air pump, the mixed gas in the reactor and the polysilicon powder come out of the reactor together and enter the gas-solid separator, where the polysilicon solid is sepa...

Example Embodiment

[0046] Embodiment 2:

[0047] 1. Purchased silicon tetrafluoride gas with a purity of 99.99% and purchased hydrogen with a purity of 99.9999% as raw materials.

[0048] 2. Mix silicon tetrafluoride gas and hydrogen gas in a mixer.

[0049] 3. Put the substrate material for the production of solar cells into the plasma reactor.

[0050] 4. Evacuate the plasma reactor and subsequent devices first, and then pass purified hydrogen into the system to clean the air flow. After cleaning, the entire system is filled with hydrogen; then turn on the power of the plasma reactor, and plasma is generated in the plasma reactor.

[0051] 5. Pour the mixed hydrogen and silicon tetrafluoride gas into the reactor. The chemical reaction occurs immediately, and polycrystalline silicon powder appears and is deposited on the substrate; when the polycrystalline silicon wafer is deposited to a certain thickness, the polycrystalline silicon wafer is taken out and directly becomes the material for manu...

Example Embodiment

[0055] Embodiment three:

[0056] 1. Select silicon dioxide powder with a content of 85% to 99% and calcium fluoride powder with a content of 75% to 99%, and mix them with sulfuric acid with a content of 92% to 100%. Silicon gas. Purify silicon tetrafluoride gas to a purity of 99.99%;

[0057] 2. Purchase high-purity hydrogen with a purity of 99.9999% as raw material.

[0058] 3. Mix the purified silicon tetrafluoride gas and high-purity hydrogen in a mixer.

[0059] 4. Evacuate the plasma reactor and subsequent devices first, and then pass purified hydrogen into the system to clean the air flow. After cleaning, the entire system is filled with hydrogen; then turn on the power of the plasma reactor, and plasma is generated in the plasma reactor.

[0060] 5. Pour the mixed hydrogen and silicon tetrafluoride gas into the reactor. A chemical reaction occurs immediately, and polysilicon powder appears.

[0061] 6. Under the action of the air pump, the mixed gas and the polysi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for producing polysilicon with silicon tetrafluoride reduced by plasmas, specifically comprising the following steps: pumping the mixture of the silicon tetrafluoride gas and hydrogen as the raw materials into a plasma reactor filled with hydrogen, heating the silicon tetrafluoride gas and hydrogen to 1200-3500 DEG C instantaneously under the action of the plasmas and the silicon tetrafluoride gas and hydrogen carrying out chemical reaction to produce the polysilicon solid and the hydrogen fluoride gas; the produced polysilicon solid and hydrogen fluoride gas and the unreacted silicon tetrafluoride gas and hydrogen jointly entering into a gas-solid separation device, separating the polysilicon solid from the gases, the purity being more than 99.9999% and producing the finished product; and the hydrogen fluoride gas and the unreacted silicon tetrafluoride gas and hydrogen jointly entering into a condenser, condensing the hydrogen fluoride gas to liquid and the silicon tetrafluoride gas and hydrogen returning to the plasma reactor. The method has the advantages of novel and reasonable process routes, low equipment requirements, easy industrialization realization and low energy consumption.

Description

technical field [0001] The invention relates to a method for producing polysilicon, more specifically a method for producing polysilicon or polysilicon wafers by using silicon tetrafluoride and hydrogen as raw materials. Background technique [0002] As is well known, there are many methods for producing polysilicon used as a raw material for semiconductors or solar power cells, and some of them have been industrially practiced. [0003] For example, the patent application with the application number 200710121059 "Method for Producing Polysilicon" discloses a method: using industrial silicon and hydrogen chloride as raw materials to react to generate trichlorosilane; purifying the trichlorosilane and reacting it with hydrogen , so as to reduce and generate polysilicon; collect the tail gas generated in the process of generating trichlorosilane, purifying trichlorosilane and generating polysilicon, and recycle after treatment. [0004] The patent application with the applica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B33/03
Inventor 应盛荣
Owner 应盛荣
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap