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Method for producing polysilicon with silicon tetrafluoride reduced by plasmas

A technology of silicon tetrafluoride and plasma, applied in the direction of silicon, etc., can solve the problems of serious environmental pollution, high energy consumption, and high production cost, and achieve the effects of simple operation in the production process, reduced production cost, and low consumption of raw materials

Inactive Publication Date: 2010-12-29
应盛荣
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] 1. The investment is huge; the investment per ton of polysilicon production capacity is as high as 1 million yuan or more
[0011] 2. Low utilization rate of raw materials
[0012] 3. High energy consumption
[0013] 4. High production cost
[0014] 5. It is difficult to deal with tail gas or by-products
[0015] 6. Serious environmental pollution
[0016] 7. Poor product quality
[0017] 8. Some gases in the production process are flammable and explosive, prone to explosion accidents, and poor in safety

Method used

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  • Method for producing polysilicon with silicon tetrafluoride reduced by plasmas
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  • Method for producing polysilicon with silicon tetrafluoride reduced by plasmas

Examples

Experimental program
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Effect test

Embodiment 1

[0039] 1. React silicon dioxide powder with a content of 99% with hydrogen fluoride to generate silicon tetrafluoride and water. Purify silicon tetrafluoride gas to a purity of 99.99%; purify industrial-grade hydrogen to high-purity hydrogen with a purity of 99.9999%.

[0040] 2. Mix the purified silicon tetrafluoride gas and hydrogen in the mixer.

[0041] 3. Vacuumize the plasma reactor and the whole system first, then pass in purified hydrogen to clean the system air flow, and fill the whole system with hydrogen after cleaning; then turn on the power of the plasma reactor to generate plasma in the plasma reactor.

[0042] 4. Pass the mixed hydrogen gas and silicon tetrafluoride gas into the reactor. The chemical reaction occurs immediately, and polysilicon powder appears.

[0043] 5. Under the action of the air pump, the mixed gas in the reactor and the polysilicon powder come out of the reactor together and enter the gas-solid separator, where the polysilicon solid is se...

Embodiment 2

[0047] 1. The purchased silicon tetrafluoride gas with a purity of 99.99% and the purchased hydrogen with a purity of 99.9999% are used as raw materials.

[0048] 2. Mix silicon tetrafluoride gas and hydrogen gas in a mixer.

[0049] 3. Put the substrate material used to produce solar cells into the plasma reactor.

[0050] 4. Vacuumize the plasma reactor and subsequent devices first, and then pass in purified hydrogen to clean the system with air flow. After cleaning, the entire system is filled with hydrogen; then turn on the power of the plasma reactor to generate plasma in the plasma reactor.

[0051] 5. Pass the mixed hydrogen gas and silicon tetrafluoride gas into the reactor. The chemical reaction occurs immediately, polysilicon powder appears, and is deposited on the substrate; when it is deposited to a certain thickness, the polysilicon wafer is taken out and directly becomes the material for manufacturing solar cells.

[0052] 6. Under the action of the air pump, the...

Embodiment 3

[0056] 1. Select silicon dioxide powder with a content of 85% to 99% and calcium fluoride powder with a content of 75% to 99%, and chemically react with sulfuric acid with a content of 92% to 100% to produce tetrafluoroethylene Silicon gas. Purify silicon tetrafluoride gas to a purity of 99.99%;

[0057] 2. Purchasing high-purity hydrogen with a purity of 99.9999% as raw material.

[0058] 3. Mix the purified silicon tetrafluoride gas and high-purity hydrogen in the mixer.

[0059] 4. Vacuumize the plasma reactor and subsequent devices first, and then pass in purified hydrogen to clean the system with air flow. After cleaning, the entire system is filled with hydrogen; then turn on the power of the plasma reactor to generate plasma in the plasma reactor.

[0060] 5. Pass the mixed hydrogen gas and silicon tetrafluoride gas into the reactor. The chemical reaction occurs immediately, and polysilicon powder appears.

[0061] 6. Under the action of the air pump, the mixed gas ...

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Abstract

The invention discloses a method for producing polysilicon with silicon tetrafluoride reduced by plasmas, specifically comprising the following steps: pumping the mixture of the silicon tetrafluoride gas and hydrogen as the raw materials into a plasma reactor filled with hydrogen, heating the silicon tetrafluoride gas and hydrogen to 1200-3500 DEG C instantaneously under the action of the plasmas and the silicon tetrafluoride gas and hydrogen carrying out chemical reaction to produce the polysilicon solid and the hydrogen fluoride gas; the produced polysilicon solid and hydrogen fluoride gas and the unreacted silicon tetrafluoride gas and hydrogen jointly entering into a gas-solid separation device, separating the polysilicon solid from the gases, the purity being more than 99.9999% and producing the finished product; and the hydrogen fluoride gas and the unreacted silicon tetrafluoride gas and hydrogen jointly entering into a condenser, condensing the hydrogen fluoride gas to liquid and the silicon tetrafluoride gas and hydrogen returning to the plasma reactor. The method has the advantages of novel and reasonable process routes, low equipment requirements, easy industrialization realization and low energy consumption.

Description

technical field [0001] The invention relates to a method for producing polysilicon, more specifically a method for producing polysilicon or polysilicon wafers by using silicon tetrafluoride and hydrogen as raw materials. Background technique [0002] As is well known, there are many methods for producing polysilicon used as a raw material for semiconductors or solar power cells, and some of them have been industrially practiced. [0003] For example, the patent application with the application number 200710121059 "Method for Producing Polysilicon" discloses a method: using industrial silicon and hydrogen chloride as raw materials to react to generate trichlorosilane; purifying the trichlorosilane and reacting it with hydrogen , so as to reduce and generate polysilicon; collect the tail gas generated in the process of generating trichlorosilane, purifying trichlorosilane and generating polysilicon, and recycle after treatment. [0004] The patent application with the applica...

Claims

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Application Information

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IPC IPC(8): C01B33/03
Inventor 应盛荣
Owner 应盛荣
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