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Gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level

A monolithic circuit, limiting level technology, applied in the direction of limiting the amplitude with diodes, to achieve the effect of increasing power capacity, small leakage power, and ensuring normal operation

Inactive Publication Date: 2011-01-05
南京国博电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, the traditional gallium arsenide (GaAs) limiter monolithic circuit generally has a maximum passing power level of 5W and a maximum output limiting level of about 17dBm.

Method used

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  • Gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level
  • Gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level
  • Gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level

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Experimental program
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Embodiment

[0032] a) Design of GaAs PIN diode.

[0033] First determine the model parameters of the GaAs PIN diode, including GaAs PIN diode junction capacitance, breakdown voltage, on-resistance and other parameters. According to the performance requirements of the limiter, choose different diodes PIN1, PIN2, PIN3. and determine its minimum area. The plane figure of the GaAs PIN diode can be circular or other shapes. like Figure 4 As shown, then determine its minimum graphic radius ( Figure 4 radius of the middle anode).

[0034] b) Design of GaAs PIN diode limiter.

[0035] according to figure 2 The principle of the circuit structure, microwave CAD simulation, select the junction capacitance of the diode, adjust the width and length of the microstrip line L1, L2, L3, L4, optimize the microwave S parameters of the limiter circuit to meet the design requirements. Finally, the layout is carried out according to the circuit principle.

[0036] PIN1 diode: anode radius 21.5um,

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Abstract

The invention discloses a gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level, which adopts three-level structure design, wherein the first level adopts the geminate transistor structure of six same GaAs PIN diodes, wherein the cathodes and the anodes of three GaAs PIN diodes are connected in series, the anodes are connected with a microwave signal transmission line, the cathodes are grounded, the cathodes and the anodes of the other three GaAs PIN diodes are connected in series, the cathodes are connected with the microwave signal transmission line, and the anodes are grounded; the second level and the third level adopt the transistor structure of the same diode, wherein the anode of one GaAs PIN diode is connected with the microwave signal transmission line, and the cathode thereof is grounded, the cathode of the other GaAs PIN diode is connected with the microwave signal transmission line, and the anode thereof is grounded. The invention has the advantages that the signal of the monolithic limiter has large signal-passing power and small leaked level and is convenient to apply. The invention can be obtained in volume production by a three-inch GaAs PIN diode monolithic technology and has good consistency and low cost.

Description

technical field [0001] The invention is a monolithic circuit of gallium arsenide (GaAs) PIN tube limiter with high microwave power and low limit level. Using 3-inch GaAs pin diode monolithic technology, the limiter monolithic circuit has the characteristics of large passing power, low insertion loss, high application frequency, low leakage level, small size and convenient use. It belongs to the field of microwave monolithic integrated circuits. Background technique [0002] In a microwave and millimeter wave system, in order to prevent the pre-low noise amplifier (LNA) of the receiver from being burned by the transmitted leakage power, a limiter needs to be placed in front of the low noise amplifier. See attached figure 1 . The limiter is usually implemented with a PIN diode. By controlling the working state of the PIN diode, it can be smooth with a small difference when a low-power microwave signal is passed, and it is attenuated to a lower power level when a high-power ...

Claims

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Application Information

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IPC IPC(8): H03G11/02
Inventor 陈新宇蒋东铭刘军霞
Owner 南京国博电子股份有限公司
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