Gallium arsenide (GaAs) PIN tube limiter monolithic circuit with microwave high power and low clipping level
A monolithic circuit, limiting level technology, applied in the direction of limiting the amplitude with diodes, to achieve the effect of increasing power capacity, small leakage power, and ensuring normal operation
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[0032] a) Design of GaAs PIN diode.
[0033] First determine the model parameters of the GaAs PIN diode, including GaAs PIN diode junction capacitance, breakdown voltage, on-resistance and other parameters. According to the performance requirements of the limiter, choose different diodes PIN1, PIN2, PIN3. and determine its minimum area. The plane figure of the GaAs PIN diode can be circular or other shapes. like Figure 4 As shown, then determine its minimum graphic radius ( Figure 4 radius of the middle anode).
[0034] b) Design of GaAs PIN diode limiter.
[0035] according to figure 2 The principle of the circuit structure, microwave CAD simulation, select the junction capacitance of the diode, adjust the width and length of the microstrip line L1, L2, L3, L4, optimize the microwave S parameters of the limiter circuit to meet the design requirements. Finally, the layout is carried out according to the circuit principle.
[0036] PIN1 diode: anode radius 21.5um,
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