Manufacture method of LED integrated structure
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 杨东佐
- Publication Date
- 2011-02-02
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for manufacturing an LED integrated structure used for lighting, backlight source modules, televisions, LED dot matrix display screens, projection equipment, etc., in particular to a method for manufacturing a high-power LED integrated structure. Background technique
[0002] Semiconductor LED is a new type of solid light source. Its traditional packaging is an in-line structure such as epoxy resin encapsulating the LED chip and the pins are electrically connected to the LED chip. In the 1980s, surface mount technology began to be used. LED light sources, especially high-power LED light sources, concentrate heat when emitting light. If the heat generated by the LED chip is not dissipated in time, the temperature of the LED light source will be too high, which will lead to reduced light efficiency and short life of the LED. The rapid and effective dissipation of the heat generated by LED chips when they emit light has b...