Phase change storage unit and method for manufacturing heating layer thereof
A technology of phase change storage and manufacturing method, which is applied in the field of phase change storage unit and its heating layer, can solve the problems of low adhesion between phase change layer and heating layer, high power consumption, large operating current, etc. Low power consumption, simple and convenient manufacturing process, and low operating current
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Embodiment 1
[0032] Such as figure 2 As shown, in this embodiment, the manufacturing method of the heating layer of the phase change memory unit includes:
[0033] First, deposit a titanium nitride (TiN) film on the substrate;
[0034] Wherein, the method for depositing a titanium nitride film on the substrate may be atomic layer deposition (ALD), and the atomic layer deposition method has the advantages of precise film thickness control, easy composition control, excellent surface coverage and good deposition uniformity and other advantages, for depositing ultra-thin films in a small area, the atomic layer deposition method has very good advantages, and the substrate refers to the structure that needs to form a heating layer in the phase change memory unit;
[0035] Wherein, the method for depositing a titanium nitride film on the substrate can be chemical phase deposition (CVD), and the chemical vapor deposition method has the advantage of fast deposition rate, which is conducive to im...
Embodiment 2
[0050] Such as image 3 As shown, in this embodiment, the phase change memory unit 20 includes: a substrate 200, an insulating layer 204 located on the substrate 200, a phase change unit penetrating through the insulating layer 204, and the phase change unit includes The lower electrode 210, the first heating layer 208, the first phase change layer 206, and the upper electrode 202 are sequentially formed on the substrate 200, and the material of the first heating layer 208 is titanium oxynitride.
[0051] Wherein, the material of the substrate 200 is silicon, the material of the insulating layer 204 is silicon oxide, the material of the upper electrode 202 is aluminum and the material of the lower electrode 210 is TiN, and the material of the first phase change layer 206 is Chalcogenide alloy thin film;
[0052] Wherein, the thickness of the formed titanium oxynitride thin film is 1nm~10nm, the resistivity is 10 -4 ~1Ω·m;
Embodiment 3
[0054] Such as Figure 4 As shown, in this embodiment, the phase change memory unit 30 includes: a substrate 300, an insulating layer 304 located on the substrate 300, a phase change unit penetrating through the insulating layer 304, and the phase change unit includes The lower electrode 310, the first heating layer 308a, the first phase change layer 306, the second heating layer 308b, the upper electrode 302 are sequentially formed on the substrate 300, the first heating layer 308a and the second heating layer 308b The material is titanium oxynitride.
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Abstract
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