Zinc oxide single crystal and method for producing the same
A technology of zinc oxide single crystal and manufacturing method, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of reduced yield, enlarged quality deviation, increased cost, etc., and achieves the effect of high yield
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Embodiment 1～21
[0112] use figure 1 The crystal growth device for the manufacture of zinc oxide single crystals. As the seed crystal, a 1.0mm thick and 1×10 2 ~1×10 4 piece / cm 2 The C plane of the main crystal plane is a plate-shaped crystal with a major diameter of 20 mm. Examples 1 to 21 employed the conditions described in Table 1, respectively. The LiOH concentration in the solution described in Table 1 is shown in ppm unit (weight basis) only in Example 21.
[0113] In addition, the temperature change in the crystal growth of zinc oxide can be measured by monitoring with a thermocouple, and it describes in Table 1. In addition, the pressure change in the crystal growth of zinc oxide can be measured by monitoring with a manometer, and it describes in Table 1.
[0114] In Examples 1, 3-9, 12, and 15-21, no macroscopic defects such as flow marks were observed in the obtained zinc oxide single crystals, and the quality was extremely high. In addition, the following preferred examples ...
Embodiment 22～26
[0123] Using the same seed crystals and crystal growth apparatus as in Examples 1-21, zinc oxide crystals were grown by the same method under the conditions in Table 2. Examples 22, 24, and 26 are crystals grown on the (0001) plane [+C plane], and Examples 23 and 25 are crystals grown on the (000-1) plane [-C plane]. In Examples 22 to 25, two wafers were cut out from the same crystal and evaluated. The carrier concentration, mobility, and resistivity of the obtained zinc oxide single crystal were determined by Hall measurement (van der Pauw method (Van der Pauw method)). As a measuring device, ResiTest 8300 manufactured by Toyo Corporation was used. Macroscopic defects such as flow marks were not observed at all in the obtained zinc oxide single crystal, and the quality was extremely high.
[0124]
Embodiment 27～30
[0126] Using the same seed crystal and crystal cultivation device as in Examples 1 to 21, gallium oxide (Ga 2 o 3 ), and use the same method to make zinc oxide crystal growth under the conditions of table 3. The Ga concentration shown in Table 3 is the concentration of Ga element in the raw material (weight basis). Examples 27 and 29 are crystals grown on the (0001) plane [+C plane]. Examples 28 and 30 are crystals grown on the (000-1) plane [-C plane]. The concentration of gallium in the obtained ZnO single crystal was determined by secondary ion mass spectrometry. As a measuring device, a 4F secondary ion mass spectrometer manufactured by Cameca was used. use 2 + Ions are used as primary ion species, and the primary ion energy is 8keV. It should be noted that the gallium detection limit of this method is 5 × 10 14 atom / cm 3 . In addition, the resistivity of the obtained zinc oxide single crystal was measured by the eddy current method using a non-contact resistivit...
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