Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing bismuth telluride-based thermoelectric material

A thermoelectric material, bismuth telluride-based technology, applied in chemical instruments and methods, polycrystalline material growth, self-regional melting method, etc., can solve the problem of reducing material conductivity, increasing material oxidation, increasing material production cost and production cycle, etc. problems, to achieve the effect of reducing the probability of oxidation, shortening the cycle, and easy demoulding

Inactive Publication Date: 2011-03-16
WUHAN UNIV OF TECH +1
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this method, the material needs to be pulverized and ground. This process greatly increases the possibility of the material being oxidized, reduces the electrical conductivity of the material and increases the production cost and production cycle of the material.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing bismuth telluride-based thermoelectric material
  • Method for preparing bismuth telluride-based thermoelectric material
  • Method for preparing bismuth telluride-based thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1 (preparation of 350°C extrusion sample):

[0031] A preparation method for a bismuth telluride-based thermoelectric material, comprising the steps of:

[0032] 1) Prepare bismuth telluride-based thermoelectric material ingots (rod-shaped, zone-melted samples, and this preparation method is the prior art) by zone melting method. The diameter of the rod-shaped bismuth telluride-based thermoelectric material ingots is 30 mm. 50mm long, spare;

[0033] 2) Put the bismuth telluride-based thermoelectric material ingot with a length of 50mm and a diameter of 30mm and rod shape directly into the extrusion mold, and then put the ingot of the bismuth telluride-based thermoelectric material together with the extrusion mold into the hot extrusion furnace In vacuum (vacuum degree: 1.0Pa), hot extrusion is carried out to obtain bismuth telluride-based thermoelectric material (sample of Φ10mm×20mm); the hot extrusion conditions are: the temperature of hot extrusion is 350°C...

Embodiment 2

[0038] Embodiment 2 (preparation of 400 ℃ extrusion sample):

[0039] A preparation method for a bismuth telluride-based thermoelectric material, comprising the steps of:

[0040] 1) Prepare bismuth telluride-based thermoelectric material ingots (rod-shaped, zone-melted samples, and this preparation method is the prior art) by zone melting method. The diameter of the rod-shaped bismuth telluride-based thermoelectric material ingots is 30 mm. 50mm long, spare;

[0041] 2) Put the bismuth telluride-based thermoelectric material ingot with a length of 50mm and a diameter of 30mm and rod shape directly into the extrusion mold, and then put the ingot of the bismuth telluride-based thermoelectric material together with the extrusion mold into the hot extrusion furnace Hot extrusion was carried out under vacuum (vacuum degree of 1.0Pa) to obtain bismuth telluride-based thermoelectric materials (sample of Φ10mm×20mm); hot extrusion conditions were: hot extrusion temperature 400°C, he...

Embodiment 3

[0046] Embodiment 3 (preparation of 450 ℃ extrusion sample):

[0047] A preparation method for a bismuth telluride-based thermoelectric material, comprising the steps of:

[0048] 1) Prepare bismuth telluride-based thermoelectric material ingots (rod-shaped, zone-melted samples, and this preparation method is the prior art) by zone melting method as raw material, and the diameter of the rod-shaped bismuth telluride-based thermoelectric material ingots is 30mm , intercept 50mm long, spare;

[0049] 2) Put the bismuth telluride-based thermoelectric material ingot with a length of 50mm and a diameter of 30mm and rod shape directly into the extrusion mold, and then put the ingot of the bismuth telluride-based thermoelectric material together with the extrusion mold into the hot extrusion furnace Hot extrusion was carried out under an inert gas (argon) to obtain a bismuth telluride-based thermoelectric material (a sample of Φ10mm×20mm); the hot extrusion conditions were: the tempe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
flexural strengthaaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a thermoelectric material, in particular to a method for preparing a bismuth telluride-based thermoelectric material. The method is characterized by comprising the following steps of: 1) preparing bismuth telluride-based thermoelectric material ingots by a zone-melting method; and 2) directly loading the prepared bismuth telluride-based thermoelectric material ingots into an extrusion die, putting the bismuth telluride-based thermoelectric material ingots and the extrusion die together into a hot extrusion furnace and performing hot extrusion in vacuum or under the protection of inert gas to obtain the bismuth telluride-based thermoelectric material, wherein the hot extrusion conditions are that: the hot extrusion temperature is between 250 and 550 DEG C, the heating rate is 10 DEG C / min, the heat preservation time is 1 to 3 hours, the extrusion ratio is 9:1-3:1, the extrusion angle is 30 to 60 degrees and the extrusion speed is 1mm / min. The method saves cost and can shorten the production period; and the bismuth telluride-based thermoelectric material prepared by the method has the characteristics of high breaking strength and compression strength.

Description

technical field [0001] The invention relates to a preparation method of a thermoelectric material. Specifically, it relates to a preparation method of a bismuth telluride-based thermoelectric material with preferred crystal grain orientation. Background technique [0002] Thermoelectric material is a material that uses thermoelectric effect to directly couple and convert thermal energy and electrical energy. Thermoelectric conversion technology uses the Seebeck effect and Peltier effect of semiconductor thermoelectric materials to directly convert thermal energy and electrical energy. The technology includes thermoelectric power generation and thermoelectric refrigeration. No matter in terms of power generation (such as using the temperature difference between the inside and outside of the transmitter of the spacecraft operating in deep space to establish an automatic power generation system for long-term space operations), or in terms of environmental protection, no vibrat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B13/00
Inventor 姜洪义周微任卫王晓琳
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com