Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film

A technology of solar cells and PN junctions, applied in the direction of sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problems of blocked pipes, large amounts of metaphosphoric acid, and high fragmentation rate of silicon wafers, so as to save production costs, compatible production processes, The effect of simple production process

Inactive Publication Date: 2011-04-06
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]The use of phosphorus oxychloride (POCl3) liquid source for diffusion junction has the following disadvantages: (1) the formation of phosphosilicate glass ( PSG), it is necessary to increase the follow-up cleaning process to remove it; (2) It is easy to cause a large amount of metaphosphoric acid, which not only blocks the pipeline, but also corrodes the quartz parts of the diffusion furnace, so regular cleaning and maintenance are required; (

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0021] Example 1: Divide the area into 125×125mm 2 , P-type monocrystalline silicon wafer with a thickness of about 200 microns is textured and cleaned, and a layer of phosphorus-doped silicon nitride film with a thickness of 50 nm is deposited by PECVD equipment, and the atomic mass percentage of phosphorus in the silicon nitride film is 3% , where the deposition temperature is 300 °C, pH 3 with SiH 4 The volume flow ratio is 1:100, SiH 4 with NH 3 The volume flow ratio is 1:5, and the pressure of the reaction chamber is 100Pa; then annealing treatment is carried out at 900°C for 10 minutes in a nitrogen atmosphere to realize the surface diffusion of phosphorus and the formation of an N-type emitter, and finally form a layer covered with silicon nitride. PN junction.

Embodiment 2

[0022] Example 2: Divide the area to 156×156mm 2 , a P-type polysilicon wafer with a thickness of about 180 microns is textured and cleaned, and a 200 nm thick phosphorus-doped silicon nitride film is deposited using conventional PECVD equipment. The atomic mass percentage of phosphorus in the silicon nitride film is 5%, and the substrate temperature 400°C, PH 3 with SiH 4 The volume flow ratio is 5:100, SiH 4 with NH 3 The volume flow ratio is 1:5, and the pressure of the reaction chamber is 80Pa; then annealing treatment at 850°C for 20 minutes in a nitrogen atmosphere to realize the diffusion of phosphorus and the formation of an N-type emitter, and finally form a silicon nitride layer covered PN junction.

Embodiment 3

[0023] Example 3 : Set the area to 125×125mm 2 , N-type monocrystalline silicon wafer with a thickness of about 200 microns is textured and cleaned, and a boron-doped silicon nitride film with a thickness of 100 nm is deposited by PECVD technology. The atomic mass percentage of boron in the silicon nitride film is 4%, and the lining The bottom temperature is 400°C, B 2 h 6 with SiH 4 The volume flow ratio is 1:100, SiH 4 with NH 3 The volume flow ratio is 1:5, and the reaction chamber pressure is 100Pa; then annealing treatment at 1000°C for 30 minutes in a nitrogen atmosphere to realize the diffusion of B and the formation of a P-type emitter, and finally form a PN covered with a silicon nitride layer. Knot.

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Abstract

The invention discloses a method for continuously preparing a crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film. The method comprises the following steps of depositing a phosphor-doped (or boron-doped) silicon nitride antireflection film on a P-type (or N-type) silicon wafer which is cleaned and etched by using a plasma enhanced chemical vapor deposition technology, carrying out conventional annealing treatment at high temperature so that part phosphor (or boron) in the silicon nitride layer is diffused to the P-type (or N-type) silicon wafer, and forming a PN junction on the surface of the silicon wafer. The method is compatible with the industrialized crystalline silicon solar cell production process, does not need complex POC13 or BBr3 diffusion and the subsequent step of removing phosphorus silicon or boron silicon glass, has simpler production process and is suitable for low-cost batch production.

Description

technical field [0001] The invention relates to a method for manufacturing a PN junction and an antireflection film of a crystalline silicon solar cell. Background technique [0002] Crystalline silicon solar cells occupy more than 80% of the photovoltaic market due to their rich raw materials, high photoelectric conversion efficiency, good stability, long life, and mature technology. How to further reduce costs is the focus of domestic and foreign photovoltaic industries. [0003] The current mature commercial production of P-type crystalline silicon solar cell production process includes the following steps: surface texture and chemical cleaning of silicon wafers, in POCl 3 The PN junction is formed in the atmosphere, the PN junction around the silicon wafer is removed, the phosphorous silicon glass (PSG) is removed, the silicon nitride anti-reflection film is coated with PECVD, the front and back electrodes and the back surface field are screen-printed, and the ohmic cont...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 万青曾梦麟佘鹏张雪平
Owner HUNAN UNIV
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