Additive for acidic texturing agent for polycrystalline silicon solar battery sheet
A solar cell and texturing agent technology, which is applied in the field of additives, can solve the problems of uneven texture of wafers, low photoelectric conversion efficiency, and large thinning of silicon wafers, and achieves simple preparation and use processes and improved photoelectric conversion efficiency. , the effect of small suede size
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Embodiment 1
[0013] Phosphoric acid (H 3 PO 4 ), sulfuric acid (H 2 SO 4 ) and pure water, the mass percentage of each raw material is: 5%-30% of phosphoric acid, 5%-10% of sulfuric acid, and the balance of pure water.
[0014] Each raw material is selected within its weight range, and the total weight is 100%.
[0015] Preparation of additives: Add pure water into the agitator, add sulfuric acid and phosphoric acid according to the mass percentage under rapid agitation, continue to agitate and cool to normal temperature.
[0016] When in use, the embodiment 1 of the present invention is added into the existing acidic texturing liquid as an additive, and the mass ratio of the embodiment 1 of the present invention to the acidic texturing liquid is 1-20:100. The polycrystalline silicon wafer is immersed in the texturing solution added with the embodiment 1 of the present invention for texturing at a temperature of 60-70° C. for 5-15 minutes.
Embodiment 2
[0018] Phosphoric acid (H 3 PO 4 ), sulfuric acid (H 2 SO 4 ) and pure water to prepare 100g of solution, the mass percent of each raw material is: phosphoric acid 5%, sulfuric acid 5%, pure water 90%.
[0019] The preparation method is the same as in Example 1.
[0020] When in use, the embodiment 2 of the present invention is added into the existing 1000g acidic texturing liquid as an additive. The polycrystalline silicon wafer is immersed in the texturing solution added with Example 2 of the present invention for texturing at a temperature of 60° C. for 10 minutes. The textured structure on the surface of the obtained silicon wafer is small in size, uniform in distribution, and low in reflectivity, with an average reflectivity of 13%.
Embodiment 3
[0022] Phosphoric acid (H 3 PO 4 ), sulfuric acid (H 2 SO 4 ) and pure water to prepare 40g of solution, the mass percent of each raw material is: phosphoric acid 30%, sulfuric acid 10%, pure water 60%.
[0023] The preparation method is the same as in Example 1.
[0024] When in use, the embodiment 3 of the present invention is added as an additive to the existing 1000g acidic texturing liquid. The polycrystalline silicon wafer was immersed in the texturing solution added with Example 3 of the present invention for texturing at a temperature of 70° C. for 8 minutes. The textured structure on the surface of the obtained silicon wafer is small in size, uniform in distribution, and low in reflectivity, with an average reflectivity of 13.5%.
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