Organic light-emitting diode device
A technology for electroluminescent devices and organic light-emitting layers, which is applied in the fields of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of affecting the life of OLEDs, insufficient electron mobility, etc., so as to improve the carrier matching degree and simplify the structure. And the effect of improving the preparation process and device stability
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Embodiment 1
[0051] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C5:CsCO 3 (20nm, 10%) / Al(150nm)
[0052] With the ITO conductive glass substrate etched with specific patterns as the substrate, the substrate is ultrasonically cleaned in deionized water containing cleaning solution. The temperature of the cleaning solution is about 60°C, and then the cleaned substrate is cleaned Dry it, put it into the evaporation chamber to evaporate the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, the electron injection layer, and the cathode structure in sequence, and the chamber pressure during the evaporation process is lower than 5.0×10- 3Pa.
[0053] In this example, the first 40nm of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) on the ITO anode acts as a hole Transport layer; continue to vapor-deposit 50nm thick octahydroxyquinoline aluminum (Alq 3 ) as the light-emitting layer; a 20nm electron injection and trans...
Embodiment 2
[0055] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C8:CsF(20nm, 10%) / Al(150nm)
[0056] The device with the above structure was prepared according to the method of Example 1, except that CsF doped with 10% by weight of C8 in the compound of the present invention was used as the electron injection and transport functional layer of the device.
Embodiment 3
[0058] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C20:KBH(20nm, 10%) / Al(150nm)
[0059] The device with the above structure was prepared according to the method of Example 1, except that KBH doped with 10% (weight) of C20 was used as the electron injection and transport functional layer of the device.
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