Organic light-emitting diode device
A technology for electroluminescent devices and organic light-emitting layers, which is applied in the fields of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of affecting the life of OLEDs, insufficient electron mobility, etc., so as to improve the carrier matching degree and simplify the structure. And the effect of improving the preparation process and device stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0050] Example 1
[0051] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C5:CsCO 3 (20nm, 10%) / Al(150nm)
[0052] The ITO conductive glass substrate with a specific pattern etched is used as the substrate, and the substrate is ultrasonically cleaned in deionized water containing cleaning solution. Bake dry, put it into an evaporation chamber to evaporate the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode structure in turn. During the evaporation process, the chamber pressure is lower than 5.0×10- 3Pa.
[0053] In this example, the first 40 nm N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine(NPB) on the ITO anode is used as a hole Transmission layer; continue to evaporate 50nm thick aluminum octahydroxyquinoline (Alq 3 ) as a light-emitting layer; a 20nm electron injection and transport functional layer is evaporated by co-evaporation, wherein the compound CsCO 3 The doping conc...
Example Embodiment
[0054] Example 2
[0055] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C8:CsF(20nm, 10%) / Al(150nm)
[0056] The device with the above structure was prepared according to the method of Example 1, except that CsF doped with 10% by weight of C8 in the compound of the present invention was used as the electron injection and transport functional layer of the device.
Example Embodiment
[0057] Example 3
[0058] Device structure: ITO / NPB(40nm) / Alq 3 (50nm) / C20:KBH(20nm, 10%) / Al(150nm)
[0059] The device with the above structure was prepared according to the method of Example 1, except that KBH doped with 10% by weight in C20 was used as the electron injection and transport functional layer of the device.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap